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公开(公告)号:US20040174742A1
公开(公告)日:2004-09-09
申请号:US10796995
申请日:2004-03-11
Applicant: Renesas Technology Corp. , Hitachi ULSI Systems Co., Ltd.
Inventor: Motoki Kanamori , Takayuki Tamura , Kenji Kozakai , Atsushi Shikata , Shinsuke Asari
IPC: G11C011/34
CPC classification number: G11C16/10 , G11C2207/229
Abstract: In a card storage device containing a non-volatile memory and a buffer memory, the buffer memory includes a plurality of banks. Data is transferred sequentially from a host CPU to the banks of the buffer memory, data is transferred to the non-volatile memory from a bank that becomes full, a write operation is started when one unit of data to be written into the non-volatile memory at a time has been transferred and, without waiting for the data to be written, the next write data is transferred from the host CPU to a bank from which write data has been transferred.
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公开(公告)号:US20040156242A1
公开(公告)日:2004-08-12
申请号:US10716504
申请日:2003-11-20
Applicant: Renesas Technology Corp.
Inventor: Tetsuya Iida , Motoki Kanamori , Atsushi Shikata , Takayuki Tamura , Kunihiro Katayama
IPC: G11C016/04
CPC classification number: G06K19/07732 , G06K19/07
Abstract: There is provided a technology to realize high speed data transfer while compatibility of a card type storage device comprising a nonvolatile memory is ensured. Namely, in the card type storage device comprising the nonvolatile memory, a plurality of data terminals are provided and an interface unit is provided with a circuit for determining levels of data terminals. Some or all of the plurality of data terminals are connected with pull-up resistors for pulling up to a power source voltage. When the determination circuit determines that the data terminals connected with the pull-up resistors are in an open condition, the determination circuit switches a bus width (number of bits) of data.
Abstract translation: 提供了一种实现高速数据传输的技术,同时确保包括非易失性存储器的卡式存储装置的兼容性。 也就是说,在包括非易失性存储器的卡型存储装置中,提供多个数据终端,并且接口单元设置有用于确定数据终端电平的电路。 多个数据端子中的一些或全部与上拉电阻相连以提升电源电压。 当确定电路确定与上拉电阻器连接的数据端子处于打开状态时,确定电路切换数据的总线宽度(位数)。
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公开(公告)号:US20040117553A1
公开(公告)日:2004-06-17
申请号:US10716456
申请日:2003-11-20
Applicant: Renesas Technology Corp. , Hitachi ULSI Systems Co., Ltd.
Inventor: Shigeo Kurakata , Kunihiro Katayama , Motoki Kanamori , Atsushi Shikata , Tetsuya Iida
IPC: G06F012/00
CPC classification number: G06K19/0701 , G06K19/07
Abstract: A memory card is provided in which power consumption is reduced by the pull-up resistor of an input terminal and a misoperation induced by the pull-down resistor of a host apparatus is prevented. The memory card has a select terminal connected to the pull-up resistor. When the mode of the memory card is determined based on an input from the select terminal, a relatively low resistance value is selected for the pull-up resistor of the select terminal before a determination timing and the pull-up resistor is restored to an initial resistance value after the mode determination. A relatively high resistance value reduces a leakage current consumed by the pull-up resistor of the select terminal. When a pull-down resistor is connected to the terminal of a memory card host to which the memory card is attached, if the resistance value of the pull-up resistor is excessively high, it is influenced by the drawing in of a current by the pull-down resistor. If the resistance value of the pull-up resistor of the select terminal is lowered at the time of mode determination, an adverse effect of the lowering of a potential by the pull-down resistor can be circumvented.
Abstract translation: 提供了一种存储卡,其中通过输入端的上拉电阻降低功耗,并且防止由主机设备的下拉电阻引起的误操作。 存储卡具有连接到上拉电阻的选择端子。 当基于来自选择端子的输入确定存储卡的模式时,在确定定时之前为选择端的上拉电阻选择相对较低的电阻值,并且将上拉电阻恢复到初始值 模式确定后的电阻值。 相对较高的电阻值减小了选择端子的上拉电阻消耗的漏电流。 当下拉电阻连接到与存储卡相连的存储卡主机的端子时,如果上拉电阻的电阻值过高,则会受到电流的影响 下拉电阻。 如果选择端子的上拉电阻的电阻值在模式确定时降低,则可以避免下拉电阻降低电位的不利影响。
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公开(公告)号:US20040228161A1
公开(公告)日:2004-11-18
申请号:US10721873
申请日:2003-11-26
Applicant: Renesas Technology Corp.
Inventor: Makoto Mori , Seisuke Hirosawa , Atsushi Shikata
IPC: G11C011/00
CPC classification number: G06K19/07732 , G06F8/60
Abstract: The present invention provides a nonvolatile memory card in which a program is added, modified, changed, or the like by selecting arbitrary firmware on a flash memory from a plurality of pieces of firmware on flash memories. In a memory card, in addition to a program stored in a built-in ROM, firmware on flash memories as programs for adding, changing, modifying, or the like of a function such as a patch program are stored. Firmware on a flash memory which is desired to be made valid is set in a parameter sector or the like and is loaded into an external RAM, and the CPU of a control logic executes a process.
Abstract translation: 本发明提供一种非易失性存储卡,其中通过从闪速存储器上的多个固件选择闪速存储器上的任意固件来添加,修改,改变等程序。 在存储卡中,除了存储在内置ROM中的程序之外,存储作为用于添加,改变,修改等功能的程序的闪存上的固件,例如补丁程序。 希望有效的闪存上的固件被设置在参数扇区等中,并被加载到外部RAM中,并且控制逻辑的CPU执行处理。
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