公开(公告)号：EP1003926A4

公开(公告)日：2002-11-13

申请号：EP98922462

申请日：1998-05-20

Applicant: SI DIAMOND TECHN INC

Inventor： YANIV ZVI ,  FINK RICHARD LEE ,  TOLT ZHIDAN LE

IPC: H01J9/02 ,  C30B23/04 ,  C30B25/04 ,  C30B25/10 ,  C30B25/18 ,  C30B29/04

CPC classification number: B82Y10/00 ,  H01J9/025

Abstract: A film (705) (carbon and/or diamond) for a field emitter device, which may be utilized within a computer display, is produced by a process utilizing etching of a substrate (701) and then depositing the film. The etching step creates nucleation sites on the substrate for the film deposition process. With this process patterning of the emitting film is avoided. A field emitter device can be manufactured with such a film. A metal film can also be deposited (702), patterned by photolithography (703) and etch (704) to prepare nucleation sites.

Abstract translation: 可以在计算机显示器内使用的用于场致发射器件的膜（碳和/或金刚石）通过利用蚀刻基底然后沉积膜的方法产生。 蚀刻步骤在用于薄膜沉积工艺的基底上产生成核位点。 通过该过程避免了发光膜的图案化。 可以用这种膜制造场致发射器件。

公开(公告)号：EP0983603A4

公开(公告)日：2001-10-04

申请号：EP98923594

申请日：1998-05-20

Applicant: SI DIAMOND TECHN INC

Inventor： YANIV ZVI ,  FINK RICHARD LEE ,  TOLT ZHIDAN LE

IPC: H01J1/304 ,  H01J9/02

CPC classification number: H01J9/025 ,  H01J2201/30457 ,  H01J2329/00

Abstract: A film (carbon and/or diamond) for a field emitter device, which may be utilized within a computer display, is produced by a process utilizing etching of a substrate (704) and then depositing the film (705). The etching step creates nucleation sites on the substrate for the film deposition process. With this process patterning of the emitting film is avoided. A field emitter device can be manufactured with such a film. A field emission device results where the cathod has a continuous film that has not been subjected to etching, and thus has superior emission properties. A pixel in the cathode includes the emitting film deposited directly on the substrate with the conductor deposited on one or more sides of the emitter film. In one embodiment the emitter is in a window formed in the conductor layer.

公开(公告)号：EP1025575A4

公开(公告)日：2001-04-18

申请号：EP98953715

申请日：1998-10-19

Applicant: SI DIAMOND TECHN INC

Inventor： YANIV ZVI ,  TOLT ZHIDAN LE ,  FINK RICHARD LEE

IPC: H01J1/00 ,  H01J1/304 ,  H01J1/316 ,  H01K1/02

CPC classification number: H01J1/304 ,  B82Y10/00 ,  H01J2201/30457 ,  H01J2201/3165

Abstract: A carbon film (101) having an area of insulating material surrounded by an area of conducting material, and an area of material between the insulating material and the area of conducting material having a graded dielectric constant which varies from high to low from the area of insulating material to the area of conducting material.

Abstract translation: 一种碳膜（101），具有由导电材料区域围绕的绝缘材料区域，以及绝缘材料和导电材料区域之间的材料区域，该区域具有梯度介电常数，该梯度介电常数从区域 绝缘材料到导电材料的区域。