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    ACTIVE GRID
    2.
    发明申请
    ACTIVE GRID 审中-公开
    活动网格

    公开(公告)号：WO03044819A3

    公开(公告)日：2003-07-31

    申请号：PCT/US0143245

    申请日：2001-11-19

    Applicant: SI DIAMOND TECHN INC

    Inventor： FINK RICHARD LEE ,  YANIV ZVI

    IPC: H01J29/04 ,  G09G3/20 ,  G09G3/22 ,  H01J1/304 ,  H01J29/52 ,  H01J31/12 ,  H01J9/38 ,  H01J9/22

    CPC classification number: H01J31/125 ,  H01J1/304

    Abstract: A multiplexed grid structure(406) for electron emission displays allows each of the grid portions(402)to be independently controllable from each other so that electrons can be emitted from their respective pixel sites as each grid portion is addressed.

    Abstract translation: 用于电子发射显示器的复用栅格结构（406）允许每个栅格部分（402）彼此独立地控制，使得当每个栅格部分被寻址时，电子可以从它们各自的像素位点发射。

    A PROCESS FOR GROWING A CARBON FILM
    4.
    发明公开
    A PROCESS FOR GROWING A CARBON FILM 失效
    VERFAHREN ZUR ERZEUGUNG EINES KOHLENSTOFF-FILMS

    公开(公告)号：EP1003926A4

    公开(公告)日：2002-11-13

    申请号：EP98922462

    申请日：1998-05-20

    Applicant: SI DIAMOND TECHN INC

    Inventor： YANIV ZVI ,  FINK RICHARD LEE ,  TOLT ZHIDAN LE

    IPC: H01J9/02 ,  C30B23/04 ,  C30B25/04 ,  C30B25/10 ,  C30B25/18 ,  C30B29/04

    CPC classification number: B82Y10/00 ,  H01J9/025

    Abstract: A film (705) (carbon and/or diamond) for a field emitter device, which may be utilized within a computer display, is produced by a process utilizing etching of a substrate (701) and then depositing the film. The etching step creates nucleation sites on the substrate for the film deposition process. With this process patterning of the emitting film is avoided. A field emitter device can be manufactured with such a film. A metal film can also be deposited (702), patterned by photolithography (703) and etch (704) to prepare nucleation sites.

    Abstract translation: 可以在计算机显示器内使用的用于场致发射器件的膜（碳和/或金刚石）通过利用蚀刻基底然后沉积膜的方法产生。 蚀刻步骤在用于薄膜沉积工艺的基底上产生成核位点。 通过该过程避免了发光膜的图案化。 可以用这种膜制造场致发射器件。

    A FIELD EMISSION DEVICE
    5.
    发明公开
    A FIELD EMISSION DEVICE 失效
    FELDEMISSIONSVORRICHTUNG

    公开(公告)号：EP0983603A4

    公开(公告)日：2001-10-04

    申请号：EP98923594

    申请日：1998-05-20

    Applicant: SI DIAMOND TECHN INC

    Inventor： YANIV ZVI ,  FINK RICHARD LEE ,  TOLT ZHIDAN LE

    IPC: H01J1/304 ,  H01J9/02

    CPC classification number: H01J9/025 ,  H01J2201/30457 ,  H01J2329/00

    Abstract: A film (carbon and/or diamond) for a field emitter device, which may be utilized within a computer display, is produced by a process utilizing etching of a substrate (704) and then depositing the film (705). The etching step creates nucleation sites on the substrate for the film deposition process. With this process patterning of the emitting film is avoided. A field emitter device can be manufactured with such a film. A field emission device results where the cathod has a continuous film that has not been subjected to etching, and thus has superior emission properties. A pixel in the cathode includes the emitting film deposited directly on the substrate with the conductor deposited on one or more sides of the emitter film. In one embodiment the emitter is in a window formed in the conductor layer.

    A COLD CATHODE CARBON FILM
    6.
    发明公开
    A COLD CATHODE CARBON FILM 审中-公开
    KALTKATHODE KOHLERSTOFF-FILM

    公开(公告)号：EP1025575A4

    公开(公告)日：2001-04-18

    申请号：EP98953715

    申请日：1998-10-19

    Applicant: SI DIAMOND TECHN INC

    Inventor： YANIV ZVI ,  TOLT ZHIDAN LE ,  FINK RICHARD LEE

    IPC: H01J1/00 ,  H01J1/304 ,  H01J1/316 ,  H01K1/02

    CPC classification number: H01J1/304 ,  B82Y10/00 ,  H01J2201/30457 ,  H01J2201/3165

    Abstract: A carbon film (101) having an area of insulating material surrounded by an area of conducting material, and an area of material between the insulating material and the area of conducting material having a graded dielectric constant which varies from high to low from the area of insulating material to the area of conducting material.

    Abstract translation: 一种碳膜（101），具有由导电材料区域围绕的绝缘材料区域，以及绝缘材料和导电材料区域之间的材料区域，该区域具有梯度介电常数，该梯度介电常数从区域 绝缘材料到导电材料的区域。

    Low work function material
    10.
    发明专利
    Low work function material 未知

    公开(公告)号：AU2724802A

    公开(公告)日：2002-06-18

    申请号：AU2724802

    申请日：2001-12-06

    Applicant: SI DIAMOND TECHN INC

    Inventor： YANIV ZVI ,  FINK RICHARD LEE ,  PAVLOVSKY IGOR

    IPC: H01J1/304 ,  H01J1/05 ,  H01J1/02 ,  H01J1/30

    Abstract: The present invention is directed toward methods for incorporating low work function metals and salts of such metals into carbon nanotubes for use as field emitting materials. The present invention is also directed toward field emission devices, and associated components, comprising treated carbon nanotubes that have, incorporated into them, low work function metals and/or metal salts, and methods for making same. The treatments of the carbon nanotubes with the low work function metals and/or metal salts serve to improve their field emission properties relative to untreated carbon nanotubes when employed as a cathode material in field emission devices.

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