公开(公告)号：WO2011156657A3

公开(公告)日：2012-06-28

申请号：PCT/US2011039877

申请日：2011-06-09

Applicant: SOLEXEL INC ,  KRAMER KARL JOSEF ,  ASHJAEE JAY ,  MOSLEHI MEHRDAD M ,  KAMIAN GEORGE D ,  MORDO DAVID ,  YONEHARA TAKAO

Inventor： KRAMER KARL JOSEF ,  ASHJAEE JAY ,  MOSLEHI MEHRDAD M ,  KAMIAN GEORGE D ,  MORDO DAVID ,  YONEHARA TAKAO

IPC: H01L21/205 ,  H01L21/20

CPC classification number: H01L21/67754 ,  C23C16/45585 ,  C23C16/481 ,  C23C16/54 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/6719 ,  H01L21/67757

Abstract: High productivity thin film deposition methods and tools are provided wherein a thin film semiconductor material layer with a thickness in the range of less than 1 micron to 100 microns is deposited on a plurality of wafers in a reactor. The wafers are loaded on a batch susceptor and the batch susceptor is positioned in the reactor such that a tapered gas flow space is created between the susceptor and an interior wall of the reactor. Reactant gas is then directed into the tapered gas space and over each wafer thereby improving deposition uniformity across each wafer and from wafer to wafer.

Abstract translation: 提供了高生产率薄膜沉积方法和工具，其中厚度在小于1微米至100微米范围内的薄膜半导体材料层沉积在反应器中的多个晶片上。 将晶片装载在分批基座上，批量基座位于反应器中，使得在基座和反应器的内壁之间产生锥形气体流动空间。 然后将反应性气体引导到锥形气体空间中并遍及每个晶片，从而改善每个晶片和从晶片到晶片的沉积均匀性。

公开(公告)号：EP2580775A4

公开(公告)日：2014-05-07

申请号：EP11793204

申请日：2011-06-09

Applicant: SOLEXEL INC

Inventor： KRAMER KARL JOSEF ,  ASHJAEE JAY ,  MOSLEHI MEHRDAD M ,  KAMIAN GEORGE D ,  MORDO DAVID ,  YONEHARA TAKAO

IPC: H01L21/205 ,  H01L21/20

CPC classification number: H01L21/67754 ,  C23C16/45585 ,  C23C16/481 ,  C23C16/54 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/6719 ,  H01L21/67757

Abstract: High productivity thin film deposition methods and tools are provided wherein a thin film semiconductor material layer with a thickness in the range of less than 1 micron to 100 microns is deposited on a plurality of wafers in a reactor. The wafers are loaded on a batch susceptor and the batch susceptor is positioned in the reactor such that a tapered gas flow space is created between the susceptor and an interior wall of the reactor. Reactant gas is then directed into the tapered gas space and over each wafer thereby improving deposition uniformity across each wafer and from wafer to wafer.