Abstract:
PROBLEM TO BE SOLVED: To provide an anodization apparatus suitable for automatization and a batch process, and having a mechanism by which a substrate is held, transferred, and made into a part of an anodization tank, and a semiconductor substrate having a porous layer formed.SOLUTION: A plurality of substrates W are moved to a processing position while held by a left holder part 67 and a right holder part 69, and connected to an upper holder part 71 and a lower holder part 39, and then the whole circumferential surfaces of the plurality of substrates W are liquid-tight with an electrolyte solution in a reservoir 11. In this state, anodization processing is performed, and then the substrates W are discharged from the reservoir 11. Thus, the left holder part 67 and the right holder part 69 are structured along with the upper holder part 71 and the lower holder part 39 so as to be able to hold the substrates W in a liquid-tight state. Therefore, the anodization apparatus 1 suitable for automatization and a batch process is achieved, by which the plurality of the substrates W are transferred, and porous layers are formed. Also, according to the apparatus, the semiconductor substrate including porous layers efficiently and uniformly formed on both surfaces, the front and rear surfaces, can be provided.
Abstract:
Processing equipment for the metallization of a plurality of workpieces are provided. The equipment comprising a controlled atmospheric region isolated from external oxidizing ambient with at least one deposition zone for the application of a metal layer on a workpiece. A transport system moves the workpiece positioned in a batch carrier plate through the controlled atmospheric region.
Abstract:
Processing equipment for the metallization of a plurality of workpieces are provided. The equipment comprising a controlled atmospheric region isolated from external oxidizing ambient with at least one deposition zone for the application of a metal layer on a workpiece. A transport 5 system moves the workpiece positioned in a batch carrier plat through the controlled atmospheric region.
Abstract:
According to one aspect of the disclosed subject matter, fabrication methods and structures relating to multi-level metallization of solar cells are described. In one embodiment, a back contact solar cell comprises a substrate having a light receiving front side surface and a backside surface for forming patterned emitter and base regions. A first electrically conductive metallization layer is patterned on the backside base and emitter regions. An electrically insulating layer is formed on the first electrically conductive metallization layer and a second electrically conductive metallization layer is formed on the electrically insulating layer. The second electrically conductive metallization layer is connected to the first electrically conductive metallization layer through conductive via plugs formed in the electrically insulating layer.
Abstract:
The disclosed subject matter pertains to deposition of thin film or thin foil materials in general, but more specifically to deposition of epitaxial monocrystalline or quasi-monocrystalline silicon film (epi film) for use in manufacturing of high efficiency solar cells. In operation, methods are disclosed which extend the reusable life and to reduce the amortized cost of a reusable substrate or template used in the manufacturing process of silicon and other semiconductor solar cells.
Abstract:
Processing equipment for the metallization of a plurality of workpieces are provided. The equipment comprising a controlled atmospheric region isolated from external oxidizing ambient with at least one deposition zone for the application of a metal layer on a workpiece. A transport 5 system moves the workpiece positioned in a batch carrier plat through the controlled atmospheric region.
Abstract:
Fabrication methods and structures relating to multi-level metallization for solar cells as well as fabrication methods and structures for forming back contact solar cells are provided.
Abstract:
This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
Abstract:
High productivity thin film deposition methods and tools are provided wherein a thin film semiconductor material layer with a thickness in the range of less than 1 micron to 100 microns is deposited on a plurality of wafers in a reactor. The wafers are loaded on a batch susceptor and the batch susceptor is positioned in the reactor such that a tapered gas flow space is created between the susceptor and an interior wall of the reactor. Reactant gas is then directed into the tapered gas space and over each wafer thereby improving deposition uniformity across each wafer and from wafer to wafer.
Abstract:
This disclosure presents manufacturing methods and apparatus designs for making TFSSs from both sides of a re -usable semiconductor template, thus effectively increasing the substrate manufacturing throughput and reducing the substrate manufacturing cost. This approach also reduces the amortized starting template cost per manufactured substrate (TFSS) by about a factor of 2 for a given number of template reuse cycles.