Anodization apparatus, anodization system including the same, and semiconductor wafer
    1.
    发明专利
    Anodization apparatus, anodization system including the same, and semiconductor wafer 有权
    阳离子装置,包括它们的阳离子系统和半导体滤波器

    公开(公告)号:JP2013112880A

    公开(公告)日:2013-06-10

    申请号:JP2011262421

    申请日:2011-11-30

    Abstract: PROBLEM TO BE SOLVED: To provide an anodization apparatus suitable for automatization and a batch process, and having a mechanism by which a substrate is held, transferred, and made into a part of an anodization tank, and a semiconductor substrate having a porous layer formed.SOLUTION: A plurality of substrates W are moved to a processing position while held by a left holder part 67 and a right holder part 69, and connected to an upper holder part 71 and a lower holder part 39, and then the whole circumferential surfaces of the plurality of substrates W are liquid-tight with an electrolyte solution in a reservoir 11. In this state, anodization processing is performed, and then the substrates W are discharged from the reservoir 11. Thus, the left holder part 67 and the right holder part 69 are structured along with the upper holder part 71 and the lower holder part 39 so as to be able to hold the substrates W in a liquid-tight state. Therefore, the anodization apparatus 1 suitable for automatization and a batch process is achieved, by which the plurality of the substrates W are transferred, and porous layers are formed. Also, according to the apparatus, the semiconductor substrate including porous layers efficiently and uniformly formed on both surfaces, the front and rear surfaces, can be provided.

    Abstract translation: 要解决的问题:提供一种适用于自动化和分批处理的阳极氧化装置,并且具有将基板保持,转移并制成阳极氧化槽的一部分的机构,以及具有 形成多孔层。 解决方案:将多个基板W移动到处理位置,同时由左保持器部分67和右保持器部分69保持,并连接到上保持器部分71和下保持器部分39,然后整体 多个基板W的圆周表面在储存器11中用电解液液密。在该状态下,进行阳极氧化处理,然后基板W从储存器11排出。因此,左支架部分67和 右支架部分69与上保持器部分71和下保持器部分39一起构成,以便能够将基板W保持在液密状态。 因此,实现了适用于自动化和分批处理的阳极氧化装置1,通过该阳极氧化装置多个基板W被转印,形成多孔层。 此外,根据该装置,可以提供包括在前表面和后表面的两个表面上有效且均匀地形成的多孔层的半导体衬底。 版权所有(C)2013,JPO&INPIT

    High efficiency solar cell structures and manufacturing methods

    公开(公告)号:AU2013289151A1

    公开(公告)日:2014-11-13

    申请号:AU2013289151

    申请日:2013-04-02

    Applicant: SOLEXEL INC

    Abstract: According to one aspect of the disclosed subject matter, fabrication methods and structures relating to multi-level metallization of solar cells are described. In one embodiment, a back contact solar cell comprises a substrate having a light receiving front side surface and a backside surface for forming patterned emitter and base regions. A first electrically conductive metallization layer is patterned on the backside base and emitter regions. An electrically insulating layer is formed on the first electrically conductive metallization layer and a second electrically conductive metallization layer is formed on the electrically insulating layer. The second electrically conductive metallization layer is connected to the first electrically conductive metallization layer through conductive via plugs formed in the electrically insulating layer.

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