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1.发明专利
公开(公告)号：MY173413A
公开(公告)日：2020-01-23
申请号：MYPI2014700259
申请日：2012-08-09
Applicant: SOLEXEL INC
Inventor： MOSLEHI MEHRDAD M , KAPUR PAWAN , KRAMER K -JOSEF , RANA VIRENDRA V , SEUTTER SEAN , DESHPANDE ANAND , CALCATERRA ANTHONY , OLSEN GERRY , MANTEGHI KAMRAN , STALCUP THOM , KAMIAN GEORGE D , WANG DAVID XUAN-QI , SU YEN-SHENG , WINGERT MICHAEL
Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects as well as Fabrication methods and structures for forming thin film back contact solar cells are described. The Most Illustrative Drawing: Figure 4
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2.发明专利
公开(公告)号：AU2012294932B2
公开(公告)日：2016-08-11
申请号：AU2012294932
申请日：2012-08-09
Applicant: SOLEXEL INC
Inventor： MOSLEHI MEHRDAD M , KAPUR PAWAN , KRAMER K-JOSEF , RANA VIRENDRA V , SEUTTER SEAN , DESHPANDE ANAND , CALCATERRA ANTHONY , OLSEN GERRY , MANTEGHI KAMRAN , STALCUP THOM , KAMIAN GEORGE D , WANG DAVID XUAN-QI , SU YEN-SHENG , WINGERT MICHAEL
IPC: H01L31/042 , H01L31/18
Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects as well as Fabrication methods and structures for forming thin film back contact solar cells are described.
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公开(公告)号：AU2014208227A1
公开(公告)日：2014-08-21
申请号：AU2014208227
申请日：2014-07-30
Applicant: SOLEXEL INC
Inventor： MOSLEHI MEHRDAD M , KAPUR PAWAN , KRAMER KARL-JOSEF , RANA VIRENDA V , SEUTTER SEAN , DESHPANDE ANAND , CALCATERRA ANTHONY , OLSEN GERRY , MANTEGHI KAMRAN , STALCAP THOM , KAMIAN GEORGE D , WANG DAVID XUAN-QI , SU YEN-SHENG , WINGERT MICHAEL
IPC: H01L31/042 , H01L31/0224 , H01L31/18
Abstract: Fabrication methods and structures relating to multi-level metallization for solar cells as well as fabrication methods and structures for forming thin film back contact solar cells are provided.
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公开(公告)号：AU2016265969A1
公开(公告)日：2016-12-15
申请号：AU2016265969
申请日：2016-11-28
Applicant: SOLEXEL INC
Inventor： MOSLEHI MEHRDAD M , KAPUR PAWAN , KRAMER KARL-JOSEF , RANA VIRENDA V , SEUTTER SEAN , DESHPANDE ANAND , CALCATERRA ANTHONY , OLSEN GERRY , MANTEGHI KAMRAN , STALCAP THOM , KAMIAN GEORGE D , WANG DAVID XUAN-QI , SU YEN-SHENG , WINGERT MICHAEL
IPC: H01L31/042 , H01L31/0224 , H01L31/18
Abstract: Fabrication methods and structures relating to multi-level metallization for solar cells as well as fabrication methods and structures for forming thin film back contact solar cells are provided.
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5.发明专利
公开(公告)号：AU2012294932A1
公开(公告)日：2014-03-27
申请号：AU2012294932
申请日：2012-08-09
Applicant: SOLEXEL INC
Inventor： MOSLEHI MEHRDAD M , KAPUR PAWAN , KRAMER K-JOSEF , RANA VIRENDRA V , SEUTTER SEAN , DESHPANDE ANAND , CALCATERRA ANTHONY , OLSEN GERRY , MANTEGHI KAMRAN , STALCUP THOM , KAMIAN GEORGE D , WANG DAVID XUAN-QI , SU YEN-SHENG , WINGERT MICHAEL
IPC: H01L31/042 , H01L31/18
Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects as well as Fabrication methods and structures for forming thin film back contact solar cells are described.
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Patent Agency Ranking
公开(公告)号：WO2012135395A3
公开(公告)日：2013-02-07
申请号：PCT/US2012031043
申请日：2012-03-28
Applicant: SOLEXEL INC , MOSLEHI MEHRDAD M , KRAMER KARL-JOSEF , SEUTTER SEAN , KAPUR PAWAN , STALCUP THOM , WANG DAVID XUAN-QI , KAMIAN GEORGE D , MANTEGHI KAMRAN , SU YEN-SHENG , ANBALAGAN PRANAV , RANA VIRENDRA V , CALCATERRA ANTHONY , OLSEN GERRY , WORWAG WOJCIECH
Inventor： MOSLEHI MEHRDAD M , KRAMER KARL-JOSEF , SEUTTER SEAN , KAPUR PAWAN , STALCUP THOM , WANG DAVID XUAN-QI , KAMIAN GEORGE D , MANTEGHI KAMRAN , SU YEN-SHENG , ANBALAGAN PRANAV , RANA VIRENDRA V , CALCATERRA ANTHONY , OLSEN GERRY , WORWAG WOJCIECH
IPC: H01L31/042 , H01L31/0216 , H01L31/18
CPC classification number: H01L31/022441 , H01L31/0516 , H01L31/0682 , H01L31/1892 , Y02E10/547
Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects are described. The method comprises depositing an interdigitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, attaching a prepeg backplane to the interdigitated pattern of base electrodes and emitter electrodes, forming holes in the prepeg backplane which provide access to the first layer of electrically conductive metal, and depositing a second layer of electrically conductive metal on the backside surface of the prepeg backplane forming an electrical interconnect with the first layer of electrically conductive metal through the holes in the prepeg backplane.
Abstract translation: 描述了提供太阳能电池基板加强和电互连的背接触太阳能电池背板的制造方法和结构。 该方法包括在半导体衬底的背面上沉积基底电极和发射电极的交错图形，将预制电路背板连接到基极和发射电极的交错图案，在预制电路背板上形成提供对第一层 的导电金属，并且在所述预制底板的背面上沉积第二导电金属层，通过所述预制底板中的所述孔与所述第一导电金属层形成电互连。
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7.发明申请HIGH-EFFICIENCY SOLAR PHOTOVOLTAIC CELLS AND MODULES USING THIN CRYSTALLINE SEMICONDUCTOR ABSORBERS 审中-公开高效率太阳能光伏电池和模块使用薄晶体半导体吸收体
公开(公告)号：WO2013022479A3
公开(公告)日：2013-05-16
申请号：PCT/US2012000348
申请日：2012-08-09
Applicant: SOLEXEL INC , MOSLEHI MEHRDAD M , KAPUR PAWAN , KRAMER K-JOSEF , RANA VIRENDRA V , SEUTTER SEAN , DESHPANDE ANAND , CALCATERRA ANTHONY , OLSEN GERRY , MANTEGHI KAMRAN , STALCUP THOM , KAMIAN GEORGE D , WANG DAVID XUAN-QI , SU YEN-SHENG , WINGERT MICHAEL
Inventor： MOSLEHI MEHRDAD M , KAPUR PAWAN , KRAMER K-JOSEF , RANA VIRENDRA V , SEUTTER SEAN , DESHPANDE ANAND , CALCATERRA ANTHONY , OLSEN GERRY , MANTEGHI KAMRAN , STALCUP THOM , KAMIAN GEORGE D , WANG DAVID XUAN-QI , SU YEN-SHENG , WINGERT MICHAEL
IPC: H01L31/042 , H01L31/18
CPC classification number: H01L31/022441 , H01L31/0201 , H01L31/02167 , H01L31/02327 , H01L31/03765 , H01L31/0392 , H01L31/049 , H01L31/0516 , H01L31/0682 , H01L31/075 , H01L31/1812 , H01L31/1896 , Y02E10/547
Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects as well as Fabrication methods and structures for forming thin film back contact solar cells are described.
Abstract translation: 描述了与用于背接触太阳能电池的背板相关的制造方法和结构，其提供用于太阳能电池基板增强和电互连以及用于形成薄膜背接触太阳能电池的制造方法和结构。
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公开(公告)号：WO2011156657A3
公开(公告)日：2012-06-28
申请号：PCT/US2011039877
申请日：2011-06-09
Applicant: SOLEXEL INC , KRAMER KARL JOSEF , ASHJAEE JAY , MOSLEHI MEHRDAD M , KAMIAN GEORGE D , MORDO DAVID , YONEHARA TAKAO
Inventor： KRAMER KARL JOSEF , ASHJAEE JAY , MOSLEHI MEHRDAD M , KAMIAN GEORGE D , MORDO DAVID , YONEHARA TAKAO
IPC: H01L21/205 , H01L21/20
CPC classification number: H01L21/67754 , C23C16/45585 , C23C16/481 , C23C16/54 , H01L21/02532 , H01L21/0262 , H01L21/6719 , H01L21/67757
Abstract: High productivity thin film deposition methods and tools are provided wherein a thin film semiconductor material layer with a thickness in the range of less than 1 micron to 100 microns is deposited on a plurality of wafers in a reactor. The wafers are loaded on a batch susceptor and the batch susceptor is positioned in the reactor such that a tapered gas flow space is created between the susceptor and an interior wall of the reactor. Reactant gas is then directed into the tapered gas space and over each wafer thereby improving deposition uniformity across each wafer and from wafer to wafer.
Abstract translation: 提供了高生产率薄膜沉积方法和工具，其中厚度在小于1微米至100微米范围内的薄膜半导体材料层沉积在反应器中的多个晶片上。 将晶片装载在分批基座上，批量基座位于反应器中，使得在基座和反应器的内壁之间产生锥形气体流动空间。 然后将反应性气体引导到锥形气体空间中并遍及每个晶片，从而改善每个晶片和从晶片到晶片的沉积均匀性。
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公开(公告)号：EP2580775A4
公开(公告)日：2014-05-07
申请号：EP11793204
申请日：2011-06-09
Applicant: SOLEXEL INC
Inventor： KRAMER KARL JOSEF , ASHJAEE JAY , MOSLEHI MEHRDAD M , KAMIAN GEORGE D , MORDO DAVID , YONEHARA TAKAO
IPC: H01L21/205 , H01L21/20
CPC classification number: H01L21/67754 , C23C16/45585 , C23C16/481 , C23C16/54 , H01L21/02532 , H01L21/0262 , H01L21/6719 , H01L21/67757
Abstract: High productivity thin film deposition methods and tools are provided wherein a thin film semiconductor material layer with a thickness in the range of less than 1 micron to 100 microns is deposited on a plurality of wafers in a reactor. The wafers are loaded on a batch susceptor and the batch susceptor is positioned in the reactor such that a tapered gas flow space is created between the susceptor and an interior wall of the reactor. Reactant gas is then directed into the tapered gas space and over each wafer thereby improving deposition uniformity across each wafer and from wafer to wafer.
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公开(公告)号：EP2659504A4
公开(公告)日：2014-05-07
申请号：EP11856289
申请日：2011-12-31
Applicant: SOLEXEL INC
Inventor： KRAMER KARL-JOSEF , MOSLEHI MEHRDAD M , YOKOI SEIICHI , KAMIAN GEORGE D , SHARMA SHASHANK , ASHJAEE JAY
IPC: H01L21/205 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/48 , C30B25/12 , C30B25/14 , C30B29/06 , H01L21/20
CPC classification number: C23C16/45502 , C23C16/4412 , C23C16/45517 , C23C16/4582 , C23C16/4583 , C23C16/4587 , C23C16/481 , C30B25/12 , C30B25/14 , C30B29/06
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