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公开(公告)号：JP2007234643A
公开(公告)日：2007-09-13
申请号：JP2006050762
申请日：2006-02-27
Inventor： YOSHIDA HIROSHI , OZAWA MASABUMI
IPC: H01S5/022
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device where heat dissipation and life are secured and material cost can be suppressed, and to provide light equipment.
SOLUTION: A first semiconductor laser 20 and a second semiconductor laser 30 are sequentially overlapped and arranged on a submount 11B. The second semiconductor laser 30 is bonded to the first semiconductor laser 20 through a welding layer 40, so that a part becomes an overhang region 30A overhung to a periphery of the first semiconductor laser 20 in an eaves shape. A bump connection 50 is installed between the overhang region 30B and the submount 11B. The first semiconductor laser 20 or second semiconductor laser 30 can electrically be connected to an outer power supply through the bump connection 50. The size of the first semiconductor laser 20 is reduced and material cost can be suppressed.
COPYRIGHT: (C)2007,JPO&INPITAbstract translation: 要解决的问题：提供一种半导体发光装置，其中散热和寿命得到确保，并且可以抑制材料成本，并提供轻型设备。 解决方案：第一半导体激光器20和第二半导体激光器30依次重叠并布置在副安装座11B上。 第二半导体激光器30通过焊接层40接合到第一半导体激光器20，使得一部分变成与第一半导体激光器20的檐形状的周边相邻的突出部区域30A。 突起连接部50安装在突出部30B和副安装座11B之间。 第一半导体激光器20或第二半导体激光器30可以通过凸块连接50电连接到外部电源。第一半导体激光器20的尺寸减小，并且可以抑制材料成本。 版权所有（C）2007，JPO＆INPIT
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公开(公告)号：JP2003017717A
公开(公告)日：2003-01-17
申请号：JP2001203187
申请日：2001-07-04
Inventor： OZAWA MASABUMI , YAMAUCHI KIYOSHI , TANIGUCHI TADASHI
Abstract: PROBLEM TO BE SOLVED: To provide an integrated device such as an optical pickup device or the like which has such a structure where parts and the device can be accurately positioned and protected against deterioration when the parts and the device are jointed together. SOLUTION: This laser/optical integrated device 40 has the same structure as a conventional laser/optical integrated device except that the device 40 is equipped with local heaters 42 near a semiconductor laser device. In the laser/ optical integrated device, local heaters 42A to 42C are provided on the surface of a ceramic package 44 opposite to its other surface where a semiconductor laser device 14, a light reflecting mirror 16, and a photodiode 18 are provided. The local heaters 42 are each equipped with a fine tungsten wire 46 as a heater built on the surface of the package 44, and the tungsten wire 46 is 0.1 mm wide and 15 μm thick.
Abstract translation: 要解决的问题：为了提供诸如光学拾取装置等的集成装置，其具有这样的结构，即当部件和装置接合在一起时，部件和装置能够被精确地定位和保护以防止劣化。 解决方案：该激光/光学集成装置40具有与传统的激光/光学集成装置相同的结构，除了装置40在半导体激光装置附近装备有局部加热器42。 在激光/光学集成器件中，局部加热器42A至42C设置在陶瓷封装44的与其另一表面相对的表面上，其中设置半导体激光器件14，光反射镜16和光电二极管18。 本地加热器42均装有作为加热器的精细钨丝46，该加热器构建在包装44的表面上，钨丝46宽0.1mm，厚15μm。
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公开(公告)号：JP2002269865A
公开(公告)日：2002-09-20
申请号：JP2001066759
申请日：2001-03-09
Applicant: SONY CORP
Inventor： KOBAYASHI TAKASHI , OZAWA MASABUMI , TANIGUCHI TADASHI , YOSHIDA HIROSHI
IPC: G11B11/105 , G11B7/135
Abstract: PROBLEM TO BE SOLVED: To provide an optical pickup device using a diffraction element in a simple structure so as to separate magneto-optical signals, and a magneto- optical disk device loaded with it. SOLUTION: This optical pickup device is provided with a light emitting part 101 for emitting light, a light receiving part 106 for receiving emitted light from the light emitting part 101 and optical members (102, 103 and 104, etc.), for irradiating the optical recording layer of an optical recording medium 105 with the emitted light from the light emitting part 101 and coupling reflected light from the optical recording medium 105 to the light receiving part 106. The optical member is constituted of at least one optical anisotropic medium member and one optical isotropic medium member, a grating is formed at the boundary of the optical anisotropic medium member and the optical isotropic medium member, the diffraction element 102a for diffracting the reflected light from the optical recording medium 105 is included in the optical member and the reflected light from the optical recording medium 105 passed through the diffraction element is coupled to the light receiving part 106.
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公开(公告)号：JP2000332341A
公开(公告)日：2000-11-30
申请号：JP14321999
申请日：1999-05-24
Applicant: SONY CORP
Inventor： YOSHIDA HIROSHI , OZAWA MASABUMI , TOJO TAKESHI , UCHIDA SHIRO , HIRATA SHOJI , ICHIMURA ISAO
IPC: H01L33/06 , H01L33/10 , H01L33/32 , H01S5/00 , H01S5/028 , H01S5/10 , H01S5/323 , H01S5/343 , H01L33/00
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor layer using a nitride III-V group compound semiconductor capable of sufficiently reducing a quantum noise in a rated optical output required in a system in use. SOLUTION: This end-surface emission type semiconductor laser, which uses a nitride III-V compound semiconductor and fetches optical output from an end surface of a resonator satisfies the following expression: -115>20 log[A (2(N0+αi/(ΓB))/Ln(1/(RfRr))+1(ΓBL))(1+(Rf/Rr)2/1(1-Rr)/(1-Rf))], where L (cm) is a resonator length, Rf is a front end surface reflectance, Rr is a rear surface reflectance, Γ is a light confinement coefficient in a direction perpendicular to the resonator length, B (cm2) is a gain coefficient, αi (cm-1) is internal loss and N0 (cm-3) is a transparent carrier density.
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公开(公告)号：JPH10125655A
公开(公告)日：1998-05-15
申请号：JP28045596
申请日：1996-10-23
Applicant: SONY CORP
Inventor： OZAWA MASABUMI
IPC: H01L21/302 , H01L21/3065 , H01L33/06 , H01L33/32 , H01S5/00 , H01S5/323 , H01L33/00 , H01S3/18
Abstract: PROBLEM TO BE SOLVED: To reduce the ohmic contact resistance of an N-type electrode by treating the electrode forming surface of a compound semiconductor layer, in such a manner that stoichiometry of the electrode-forming surface of the compound semiconductor layer turns to low nitrogen ratio. SOLUTION: From a p-type Ga clad layer 32 to an n-type GaN clad layer 16, laminated structure of electrode-forming surface area is etched sequentially, thereby forming an electrode forming surface. On the electrode-forming surface 34, Ti/Al/Pt/Au layers are deposited in order by a vacuum evaporation method. Alloy treatment is performed at 800 deg.C for one minute, thereby forming an n-type electrode 36. Further, working into stripe structure is performed, thereby forming a p-type electrode. Hence a semiconductor laser 10 can be obtained. Thereby the semiconductor laser element 10, wherein the resistivity of ohmic contact between the n-type electrode 36 and the n-type GaN clad layer 16, is small can be formed.
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Patent Agency Ranking
公开(公告)号：JPH0786697A
公开(公告)日：1995-03-31
申请号：JP25380393
申请日：1993-09-16
Applicant: SONY CORP
Inventor： HINO TOMOKIMI , NAKAYAMA NORIKAZU , OZAWA MASABUMI , NAKANO KAZUSHI
Abstract: PURPOSE:To provide a light-emitting device whose electric properties are free of deterioration even when it undergoes a heat treatment at a temperature around 300 deg.C after the formation of a p-type electrode. CONSTITUTION:A light-emitting device provides a p-type contact layer 20 under multilayer structure formed on a compound semiconductor layer 18 where the upper most layer 24 of the p-type contact layer 20 comprises p-ZnTe having a thickness ranging from 1.0X10 nm to 1mum.
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公开(公告)号：JPH0766503A
公开(公告)日：1995-03-10
申请号：JP23236693
申请日：1993-08-25
Applicant: SONY CORP
Inventor： ITO SATORU , OZAWA MASABUMI , ISHIBASHI AKIRA , IKEDA MASAO
Abstract: PURPOSE:To obtain a light emitting diode capable of bringing a p type contact layer and a p type electrode into excellent ohmic contact as well as generating a working voltage not exceeding 10V. CONSTITUTION:The light emitting diode is provided with a p type contact layer 30 formed on a compound semiconductor layer 24, where this p type contact layer 30 is composed of the first contact layer 32, the second contact layer 36 and the a plurality of quantum well structure 34 comprising a plurality of barrier layers and a plurality of quantum well layers formed between the first and second contact layers 32 and 36, where the thickness of the barrier layer is 0.3-1,7nm and the numbers of the quantum well layers are 3-6.
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公开(公告)号：JP2003142765A
公开(公告)日：2003-05-16
申请号：JP2002221070
申请日：2002-07-30
Applicant: SONY CORP
Inventor： OZAWA MASABUMI , YOSHIDA HIROSHI , KOBAYASHI TAKASHI
Abstract: PROBLEM TO BE SOLVED: To provide a method of mounting light emitting element by which a light emitting element can be positioned to a mounting member with high positional accuracy at the time of mounting the element on the member. SOLUTION: In this method, semiconductor laser elements C are taken up one by one from a tray 18 by means of a transport collet 14, transported to an alignment stage 12, and placed on the stage 12. Then the positional deviation of each placed element C in the X- and Y-directions with respect to a reference line and a reference point provided on the stage 12 and the deviations in azimuth (θ) of the element C in the X-Y plane are measured by observing the position and azimuth of the ridge section of the element C by means of an image sensor 16. Based on the measured positional deviation in the X- and Ydirections and the deviation of the rotating direction (θ) in the X-Y plane, the position of the element C on the stage 12 is corrected by causing the driving device of the transport collet 14 to drive the collet 14 by outputting a control signal to the driving device. Then the collet 14 moves the position- and azimuth- corrected semiconductor laser element C by a prescribed distance in a prescribed azimuth by holding the element C and places the element C on the mounting surface of a heat sink H.
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9.发明专利
公开(公告)号：JP2001168444A
公开(公告)日：2001-06-22
申请号：JP34975799
申请日：1999-12-09
Applicant: SONY CORP
Inventor： OZAWA MASABUMI
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element which can prevent occurrence of short circuits caused by the adhesion of solder, shape variations in emitted light, and decline in its light output, a method of manufacturing the element, and an installation substrate used for the element. SOLUTION: A semiconductor laser element 1 is manufactured by sticking a laser chip 20, constituted by forming a p-side electrode 2a and an n-side electrode 2b on a crystalline substrate 21 to an installation substrate 30, constituted by forming first and second solder films 3a and 3b on a support body 31. The chip 20 has a step A that has the electrode 2a protruded more than the electrode 2b. The substrate 30 has a step B where a fist solder film 4a protrudes more than the second solder film 4b and is higher than the step A. At sticking of the chip 20 to the substrate 30, consequently the electrode 2b first comes into contact with the second solder film 4b, and thereafter, the electrode 2b comes in to contact with the second solder film 4b. Accordingly, the protrusion of solder is less likcly to occur to near the electrode 2a, even if the protrusion of solder occurs near the electrode 2b. Since a p-n junction is generally provided near the electrode 2a, the adhesion of solder to the junction is suppressed.
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公开(公告)号：JP2000164967A
公开(公告)日：2000-06-16
申请号：JP33473598
申请日：1998-11-25
Applicant: SONY CORP
Inventor： YOSHIDA HIROSHI , OZAWA MASABUMI
Abstract: PROBLEM TO BE SOLVED: To obtain high efficiency in radiation while preventing short circuit. SOLUTION: A semiconductor laser 10 mounted on a conductive base board 21 is stored in a package 20. The semiconductor laser 10 includes a plurality of laminated semiconductor layers, made of a III nitride compound semiconductor. A p-side electrode and a n-side electrode are provided at the same side in the laminating direction. The p-side electrode of the semiconductor laser 10 is fixed to the conductive base board 21, and the n-side electrode is projected from the conductive base board 21. Then, a short circuit can be prevented, while high efficiency in radiation by the conductive base board 21 can be obtained. The side face 21b of the conductive base board 21 is slated to the side of the p-side electrode in a direction from the mounting face 21a to the other side, and a wire 27 can be connected easily to the n-side electrode.
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