公开(公告)号：EP1396914A4

公开(公告)日：2004-12-22

申请号：EP02738719

申请日：2002-06-14

Applicant: SONY CORP

Inventor： TOJO TSUYOSHI ,  HINO TOMONORI ,  GOTO OSAMU ,  YABUKI YOSHIFUMI ,  ANSAI SHINICHI ,  UCHIDA SHIRO ,  IKEDA MASAO

IPC: H01L21/205 ,  H01S5/042 ,  H01S5/22 ,  H01S5/323 ,  H01S5/40

CPC classification number: H01S5/4031 ,  H01S5/0425 ,  H01S5/32341 ,  H01S5/4087

Abstract: A multi−beam semiconductor laser element (40) which provides a uniform light output from each beam, for ease of positioning, and which is a GaN multi−beam semiconductor laser element having four laser stripes (42A, 42B, 42C, 42D) emitting laser beams of the same wavelength. Each laser stripe (42A−42D) has a p−side common electrode (48) on a mesa (46) formed on a sapphire substrate (44), and respective laser stripes have respective active regions (50A, 50B. 50C, 50D). Two n−side electrodes (52A, 52B) are provided on an n−type GaN contact layer (54) on the opposite sides of the mesa (46) as common electrode facing the p−side common electrode (48). The distance A between the laser stripe (42A) and the laser stripe (42D) is up to 100 μm. The distance B 1 between the laser stripe (42A) and the laser−side end of the n−side electrode (52B) is up to 150 μm, and the distance B 2 between the laser stripe (42D) and the laser−side end of the n−side electrode (52A) is up to 150 μm.

Abstract translation: 一种多光束半导体激光元件（40），其为了便于定位而从每个光束提供均匀的光输出，并且是具有四个激光条纹（42A，42B，42C，42D）的GaN多光束半导体激光元件 相同波长的激光束。 每个激光条纹（42A-42D）在形成于蓝宝石基板（44）上的台面（46）上具有p侧公共电极（48），并且各激光条纹具有各自的有源区域（50A，50B，50C，50D）。 两个n侧电极（52A，52B）设置在台面（46）的相对侧上作为面向p侧公共电极（48）的公共电极的n型GaN接触层（54）上。 激光条纹（42A）和激光条纹（42D）之间的距离A高达100μm。 激光条纹（42A）与n侧电极（52B）的激光侧端部之间的距离B1达到150μm，并且激光条纹（42D）与激光条纹（42D）的激光侧端部之间的距离B2 n侧电极（52A）达到150μm。

公开(公告)号：EP2760054A4

公开(公告)日：2015-06-24

申请号：EP12832998

申请日：2012-09-03

Applicant: SONY CORP ,  SUZHOU INST NANO TECH & NANO B

Inventor： YOSHIDA HIROSHI ,  IKEDA MASAO ,  UCHIDA SHIRO ,  TANGE TAKASHI ,  KURAMOTO MASARU ,  ARIMOCHI MASAYUKI ,  YANG HUI ,  LU SHULONG ,  ZHENG XINHE

IPC: H01L31/0687 ,  H01S5/40

CPC classification number: H01L31/0725 ,  H01L31/0687 ,  H01L31/06875 ,  H01L31/0735 ,  H01S5/0262 ,  H01S5/0425 ,  H01S5/18325 ,  H01S5/3095 ,  H01S5/4043 ,  Y02E10/544

公开(公告)号：EP0714122A4

公开(公告)日：1997-05-28

申请号：EP95917493

申请日：1995-04-28

Applicant: SONY CORP

Inventor： ITO SATOSHI ,  TANIGUCHI SATOSHI ,  IKEDA MASAO ,  OKUYAMA HIROYUKI ,  TSUKAMOTO HIRONORI ,  NAGAI MASAHARU ,  TAMAMURA KOSHI

IPC: C23C14/00 ,  C23C14/06 ,  C30B23/02 ,  H01L21/363 ,  H01L21/365 ,  H01L33/00 ,  H01L33/28

CPC classification number: H01L33/285 ,  C23C14/0026 ,  C23C14/0629 ,  C30B23/02 ,  C30B29/48 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02474 ,  H01L21/02477 ,  H01L21/02551 ,  H01L21/0256 ,  H01L21/02579 ,  H01L21/02631 ,  H01L33/0087

Abstract: A film of a II - VI group compound semiconductor of at least one of elements belonging to the II group of the periodic table and at least one of elements belonging to the VI group of the periodic table is deposited on a substrate. When the film is deposited on the substrate, a plasma of nitrogen in an excited state is applied to the substrate while removing charged particles from said plasma by a charged particle removing means. The deposited film of a nitrogen-doped II - VI group compound semiconductor has an increased percentage of activated nitrogen atoms and improved crystallinity.

公开(公告)号：EP2760055A4

公开(公告)日：2015-07-01

申请号：EP12833198

申请日：2012-09-03

Applicant: SONY CORP ,  SUZHOU INST NANO TECH & NANO B

Inventor： YOSHIDA HIROSHI ,  IKEDA MASAO ,  UCHIDA SHIRO ,  TANGE TAKASHI ,  KURAMOTO MASARU ,  ARIMOCHI MASAYUKI ,  YANG HUI ,  LU SHULONG ,  ZHENG XINHE

IPC: H01L31/0687 ,  H01L31/0304 ,  H01L31/0352

CPC classification number: H01L31/0687 ,  H01L31/03046 ,  H01L31/0352 ,  H01L31/06875 ,  Y02E10/544

Abstract: A multi-junction solar cell that is lattice-matched with a base, and that includes a sub-cell having a desirable band gap is provided. It includes a plurality of sub-cells 11, 12, 13, and 14 that are laminated, and each include a first compound semiconductor layer and a second compound semiconductor layer that are laminated. At least one predetermined sub-cell 11 is configured of first layers 11A 1 and 11A 2 and a second layer 11C. In each of the first layers 11A 1 and 11A 2 , a 1-A layer 11A A and a 1-B layer 11A B are laminated. In the second layer 11C, a 2-A layer 11C A and a 2-B layer 11C B are laminated. A composition A of the 1-A layer 11A A and the 2-A layer 11C A is determined based on a value of a band gap of the predetermined sub-cell 11. A composition B of the 1-B layer 11A B and the 2-B layer 11C B is determined based on a difference between a base lattice constant of the base and a lattice constant of the composition A. Thicknesses of the 1-B layer 11A B and the 2-B layer 11C B are determined based on a difference between the base lattice constant and a lattice constant of the composition B, and on the thickness of the 1-A layer 11A A and the thickness of the 2-A layer 11C A .

公开(公告)号：DE60224273T2

公开(公告)日：2008-12-24

申请号：DE60224273

申请日：2002-06-14

Applicant: SONY CORP

Inventor： TOJO TSUYOSHI ,  HINO TOMONORI ,  GOTO OSAMU ,  YABUKI YOSHIFUMI ,  ANSAI SHINICHI ,  UCHIDA SHIRO ,  IKEDA MASAO

IPC: H01L21/205 ,  H01S5/40 ,  H01S5/042 ,  H01S5/22 ,  H01S5/323

Abstract: A multi-beam semiconductor laser device capable of emitting respective laser beams with uniform optical output levels and enabling easy alignment is provided. This multi-beam semiconductor laser device (40) is a GaN base multi-beam semiconductor laser device provided with four laser stripes (42A, 42B, 42C and 42D) which are capable of emitting laser beams with the same wavelength. The respective laser oscillating regions (42A to 42D) are provided with a p-type common electrode (48) on a mesa structure (46) which is formed on a sapphire substrate (44), and have active regions (50A, 50B, 50C and 50D) respectively. Two n-type electrodes (52A and 52B) are provided on an n-type GaN contact layer (54) and located as common electrodes opposite to the p-type common electrode (48) on both sides of the mesa structure (46). The distance A between the laser stripe (42A) and the laser stripe (42D) is no larger than 100 mu m. The distance B1 between the laser stripe (42A) and the n-type electrode (52B) is no larger than 150 mu m while the distance B2 between the laser stripe (42D) and the n-type electrode (52A) is no larger than 150 mu m.

公开(公告)号：DE69711344D1

公开(公告)日：2002-05-02

申请号：DE69711344

申请日：1997-12-05

Applicant: SONY CORP

Inventor： YANASHIMA KATSUNORI ,  IKEDA MASAO ,  TOMIOKA SATOSHI

IPC: H01L21/205 ,  C30B25/02 ,  H01L21/20 ,  H01L21/203 ,  H01L33/12 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  C30B29/40

Abstract: A method for growing nitride III-V compound semiconductor layers, comprises the steps of: growing a first BwAlxGayInzN layer (where 0≤w≤1, 0≤x≤1, 0≤y≤1, 0≤z≤1 and w+x+y+z=1) on a substrate by first vapor deposition at a growth rate not higher than 4 mu m/h; and growing a second BwAlxGayInzN layer (where 0≤w≤1, 0≤x≤1, 0≤y≤1, 0≤z≤1 and w+x+y+z=1) on the first BwAlxGayInzN layer by second vapor deposition at a growth rate higher than 4 mu m/h and not higher than 200 mu m/h. A method for fabricating a nitride III-V compound semiconductor substrate, comprises the steps of: growing a first BwAlxGayInzN layer (where 0≤w≤1, 0≤x≤1, 0≤y≤1, 0≤z≤1 and w+x+y+z=1) on a substrate by first vapor deposition at a growth rate not higher than 4 mu m/h; growing a second BwAlxGayInzN layer (where 0≤w≤1, 0≤x≤1, 0≤y≤1, 0≤y≤1 and w+x+y+z=1) on the first BwAlxGayInzN layer by second vapor deposition at a growth rate higher than 4 mu m/h and not higher than 200 mu m/h; and removing the substrate.

公开(公告)号：BR9506254A

公开(公告)日：1996-04-16

申请号：BR9506254

申请日：1995-04-28

Applicant: SONY CORP

Inventor： ITO SATOSHI ,  TANIGUCHI SATOSHI ,  IKEDA MASAO ,  OKUYAMA HIROYUKI ,  TSUKAMOTO HIRONORI ,  NAGAI MASAHARU ,  TAMAMURA KOSHI

IPC: C23C14/00 ,  C23C14/06 ,  C30B23/02 ,  H01L21/363 ,  H01L21/365 ,  H01L33/00 ,  H01L33/28

Abstract: A film of a II - VI group compound semiconductor of at least one of elements belonging to the II group of the periodic table and at least one of elements belonging to the VI group of the periodic table is deposited on a substrate. When the film is deposited on the substrate, a plasma of nitrogen in an excited state is applied to the substrate while removing charged particles from said plasma by a charged particle removing means. The deposited film of a nitrogen-doped II - VI group compound semiconductor has an increased percentage of activated nitrogen atoms and improved crystallinity.

公开(公告)号：DE60224273D1

公开(公告)日：2008-02-07

申请号：DE60224273

申请日：2002-06-14

Applicant: SONY CORP

Inventor： TOJO TSUYOSHI ,  HINO TOMONORI ,  GOTO OSAMU ,  YABUKI YOSHIFUMI ,  ANSAI SHINICHI ,  UCHIDA SHIRO ,  IKEDA MASAO

IPC: H01L21/205 ,  H01S5/40 ,  H01S5/042 ,  H01S5/22 ,  H01S5/323

Abstract: A multi-beam semiconductor laser device capable of emitting respective laser beams with uniform optical output levels and enabling easy alignment is provided. This multi-beam semiconductor laser device (40) is a GaN base multi-beam semiconductor laser device provided with four laser stripes (42A, 42B, 42C and 42D) which are capable of emitting laser beams with the same wavelength. The respective laser oscillating regions (42A to 42D) are provided with a p-type common electrode (48) on a mesa structure (46) which is formed on a sapphire substrate (44), and have active regions (50A, 50B, 50C and 50D) respectively. Two n-type electrodes (52A and 52B) are provided on an n-type GaN contact layer (54) and located as common electrodes opposite to the p-type common electrode (48) on both sides of the mesa structure (46). The distance A between the laser stripe (42A) and the laser stripe (42D) is no larger than 100 mu m. The distance B1 between the laser stripe (42A) and the n-type electrode (52B) is no larger than 150 mu m while the distance B2 between the laser stripe (42D) and the n-type electrode (52A) is no larger than 150 mu m.

公开(公告)号：MY116369A

公开(公告)日：2004-01-31

申请号：MYPI9502693

申请日：1995-09-12

Applicant: SONY CORP

Inventor： TAMAMURA KOSHI ,  TSUKAMOTO HIRONORI ,  IKEDA MASAO

IPC: C30B23/02 ,  C30B29/48 ,  H01L21/203 ,  H01L21/363 ,  H01L33/28 ,  H01S5/00

Abstract: A MOLECULAR BEAM EPITAXY SYSTEM (1) HAVING A PLURALITY OF CHAMBERS WHICH CONTAIN AT LEAST A FIRST CHAMBER (12) AND A SECOND CHAMBER (13). THE FIRST CHAMBER (12) IS USED TO FORM II-VI COLUMN COMPOUND SEMICONDUCTOR LAYERS NOT CONTAINING TE. THE SECOND CHAMBER (13) IS USED TO FORM II-VI COLUMN COMPOUND SEMICONDUCTOR LAYERS CONTAINING AT LEAST TE. A SEMICONDUCTOR DEVICE HAVING AN OHMIC CHARACTERISTICS CAN BE FABRICATED WITHOUT MIXING TE INTO OTHER LAYERS.

公开(公告)号：DE69102092D1

公开(公告)日：1994-06-30

申请号：DE69102092

申请日：1991-03-25

Applicant: SONY CORP

Inventor： YAMAMOTO TADASHI ,  IKEDA MASAO ,  MIKATA YASUE

IPC: H01S5/00 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19

Abstract: A semiconductor laser is formed into a double hereto junction structure comprising an n-type cladding layer (3) and a p-type cladding layer (5) with an active layer (4) interposed therebetween. The p-type cladding layer (5) has a laminated structure consisting of a first cladding layer (51) of (AlxGa1-x)InP disposed on one side adjacent to the active layer (4) and a second cladding layer (52) of AlyGa1-yAs disposed on the reverse side. A deterioration preventive layer (11) of AlzGa1-yAs is included in the first cladding layer (51) at a position spaced apart from the second cladding layer (52) by a predetermined distance. In addition, the second cladding layer (52) is partially removed, and a current stricture layer (10) is formed in such removed portion.