Abstract:
A sample cell (100) can be designed to minimize excess gas volume. Described features can be advantageous in reducing an amount of gas required to flow through the sample cell during spectroscopic measurements, and in reducing a time (e.g. a total volume of gas) required to flush the cell (100) between sampling events. In some examples, contours of the inner surfaces (202) of the sample cell that contact the contained gas can be shaped, dimensioned, etc. such that a maximum clearance distance (120) is provided between the inner surfaces (202) at one or more locations. A device, method and an apparatus are described.
Abstract:
Scrubber media for reactive gases, that can include but are not necessarily limited to hydrogen chloride (HCl), hydrogen sulfide (H2S), hydrogen fluoride (HF), and ammonia (NH3), can include reactive particles, potentially as small as nano-scale, that can optionally be suspended on macro-scale carrier particles. Reactive gases can be converted to non-volatile compounds by being passed through a bed of such scrubber media. Such scrubber media can be used to remove reactive gases from gas mixtures. Potential applications include differential absorption spectroscopy, air pollutant emission controls, and the like. Methods of preparing scrubber media are also described.
Abstract:
A differential absorption spectrum for a reactive gas in a gas mixture can be generated for sample absorption data by subtracting background absorption data set from the sample absorption data. The background absorption data can be characteristic of absorption characteristics of the background composition in a laser light scan range that includes a target wavelength. The differential absorption spectrum can be converted to a measured concentration of the reactive gas using calibration data. A determination can be made whether the background composition has substantially changed relative to the background absorption data, and new background absorption data can be used if the background composition has substantially changed. Related systems, apparatus, methods, and/or articles are also described..
Abstract:
Thermally controlled enclosures that can be used with gas analyzers are described. The enclosures incorporate one or more phase changing materials that buffer ambient and internal heat loads to reduce the power consumption demand of mechanical or electronic heating apparatus. Maintenance of gas analyzer equipment at a consistent temperature can be important to achieving stable and reproducible results. Related systems, apparatus, methods, and/or articles are also described.
Abstract:
A first contact surface ( 310 ) of a semiconductor laser chip ( 302 ) can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness of a metallic barrier layer to be applied to the first contact surface ( 310 ). A metallic barrier layer having the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip ( 302 ) can be soldered to a carrier mounting along the first contact surface ( 310 ) using a solder composition ( 306 ) by heating the soldering composition to less than a threshold temperature at which dissolution of the metallic barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.
Abstract:
A spectrometer includes a light source that emits a beam into a sample volume comprising an absorbing medium. Thereafter, at least one detector detects at least a portion of the beam emitted by the light source. It is later determined, based on the detected at least a portion of the beam and by a controller, that a position and/or an angle of the beam should be changed. The beam emitted by the light source is then actively steered by an actuation element under control of the controller. In addition, a concentration of the absorbing media can be quantified or otherwise calculated (using the controller or optionally a different processor that can be local or remote). The actuation element(s) can be coupled to one or more of the light source, a detector or detectors, and a reflector or reflectors intermediate the light source and the detector(s).
Abstract:
A first contact (310) surface of a semiconductor laser chip (302) is formed to a surface roughness selected to have a maximum peak to valley height that is substantially smaller than a diffusion barrier layer thickness. A diffusion barrier layer that includes a non-metallic, electrically-conducting compound and that has the barrier layer thickness is applied to the first contact surface, and the semiconductor laser chip is soldered to a carrier mounting (304) along the first contact surface using a solder composition (306) by heating the soldering composition to less than a threshold temperature at which dissolution of the barrier layer into the soldering composition occurs. Thereby the diffusion barrier remains contiguous. The non-metallic, electrically conducting compound may comprise at least one of titanium nitride, titanium oxy-nitride, tungsten nitride, cerium oxide and cerium gadolinium oxy-nitride
Abstract:
A first contact surface (310) of a semiconductor laser chip (302) can be formed to a first target surface roughness and a second contact surface (312) of a carrier mounting (304) can be formed to a second target surface roughness. A first bond preparation layer (306) comprising a first metal can optionally be applied to the formed first contact surface, and a second bond preparation layer (308) comprising a second metal can optionally be applied to the formed second contact surface. Both preparation layers may be made of gold and diffusion bonding results from a heating of device under pressure. The first contact surface can be contacted with the second contact surface, and a solderless securing process can secure the semiconductor laser chip to the carrier mounting. Related systems, methods, articles of manufacture, and the like are also described.
Abstract:
Detector data representative of an intensity of light that impinges on a detector after being emitted from a light source and passing through a gas over a path length can be analyzed using a first analysis method to obtain a first calculation of an analyte concentration in the volume of gas and a second analysis method to obtain a second calculation of the analyte concentration. The second calculation can be promoted as the analyte concentration upon determining that the analyte concentration is out of a first target range for the first analysis method.
Abstract:
Validation verification data quantifying an intensity of light reaching a detector of a spectrometer from a light source of the spectrometer after the light passes through a validation gas across a known path length can be collected or received. The validation gas can include an amount of an analyte compound and an undisturbed background composition that is representative of a sample gas background composition of a sample gas to be analyzed using a spectrometer. The sample gas background composition can include one or more background components. The validation verification data can be compared with stored calibration data for the spectrometer to calculate a concentration adjustment factor, and sample measurement data collected with the spectrometer can be modified using this adjustment factor to compensate for collisional broadening of a spectral peak of the analyte compound by the background components. Related methods, articles of manufacture, systems, and the like are described.