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公开(公告)号：AU2015202533A1
公开(公告)日：2015-05-28
申请号：AU2015202533
申请日：2015-05-11
Applicant: SPECTRASENSORS INC
Inventor： NEUBAUER GABI , FEITISCH ALFRED , SCHREMPEL MATHIAS
Abstract: A first contact surface of a semiconductor laser chip can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness of a metallic barrier layer to be applied to the first contact surface. A metallic barrier layer having the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip can be soldered to a carrier mounting along the first contact surface using a solder composition by heating the soldering composition to less than a threshold temperature at which dissolution of the metallic barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.
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公开(公告)号：AU2012296657B2
公开(公告)日：2015-05-21
申请号：AU2012296657
申请日：2012-08-14
Applicant: SPECTRASENSORS INC
Inventor： SCHREMPEL MATHIAS , FEITISCH ALFRED , NEUBAUER GABI
IPC: H01S5/022 , H01L23/485 , H01S5/042
Abstract: A first contact (310) surface of a semiconductor laser chip (302) is formed to a surface roughness selected to have a maximum peak to valley height that is substantially smaller than a diffusion barrier layer thickness. A diffusion barrier layer that includes a non-metallic, electrically-conducting compound and that has the barrier layer thickness is applied to the first contact surface, and the semiconductor laser chip is soldered to a carrier mounting (304) along the first contact surface using a solder composition (306) by heating the soldering composition to less than a threshold temperature at which dissolution of the barrier layer into the soldering composition occurs. Thereby the diffusion barrier remains contiguous. The non-metallic, electrically conducting compound may comprise at least one of titanium nitride, titanium oxy-nitride, tungsten nitride, cerium oxide and cerium gadolinium oxy-nitride
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公开(公告)号：AU2012229907A1
公开(公告)日：2013-10-03
申请号：AU2012229907
申请日：2012-03-14
Applicant: SPECTRASENSORS INC
Inventor： NEUBAUER GABI , FEITISCH ALFRED , SCHREMPEL MATHIAS
Abstract: A first contact surface ( 310 ) of a semiconductor laser chip ( 302 ) can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness of a metallic barrier layer to be applied to the first contact surface ( 310 ). A metallic barrier layer having the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip ( 302 ) can be soldered to a carrier mounting along the first contact surface ( 310 ) using a solder composition ( 306 ) by heating the soldering composition to less than a threshold temperature at which dissolution of the metallic barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.
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公开(公告)号：CA2893089C
公开(公告)日：2017-09-12
申请号：CA2893089
申请日：2013-12-12
Applicant: SPECTRASENSORS INC
Inventor： KELLER LUTZ , FEITISCH ALFRED , SCOTT PETER , SCHREMPEL MATHIAS , ST JOHN NATHAN
Abstract: A spectrometer cell can include a spacer, at least one end cap, and at least one mirror with a reflective surface. The end cap can be positioned proximate to a first contact end of the spacer such that the end cap and spacer at least partially enclose an internal volume of the spectrometer cell. The mirror can be secured in place by a mechanical attachment that may include attachment materials that are chemically inert to at least one reactive gas compound, be thermally stable above at least 120 °C, and be capable of holding an optical axis of the reflective surface in a fixed orientation relative to other components of the spectrometer cell and or a spectrometer device that comprises the spectrometer cell. The mirror can optionally be constructed of a material such as stainless steel, copper, aluminum, alumino-silicate, ceramic, or the like. Related methods, articles of manufacture, systems, etc. are described.
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公开(公告)号：CA2815323C
公开(公告)日：2017-06-13
申请号：CA2815323
申请日：2011-02-15
Applicant: SPECTRASENSORS INC
Inventor： FEITISCH ALFRED , KELLER LUTZ , LIU XIANG , SCHREMPEL MATHIAS , HELBLEY KEITH BENJAMIN
IPC: G01J3/02
Abstract: A valid state of an analytical system that includes a light source (102) and a detector (106) can be verified by determining that deviation of first light intensity data quantifying a first intensity of light received at the detector from the light source after the light has passed at least once through each of a reference gas in a validation cell (114) and a zero gas from a stored data set does not exceed a pre-defined threshold deviation. The stored data set can represent at least one previous measurement collected during a previous instrument validation process performed on the analytical system. The reference gas can include a known amount of an analyte. A concentration of the analyte in a sample gas in a measurement cell (112) can be determined by correcting second light intensity data quantifying a second intensity of the light received at the detector after the light passes at least once through each of the reference gas in the validation cell and a sample gas containing an unknown concentration of the analyte compound. Related systems, methods, and articles of manufacture are also described.
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Patent Agency Ranking
公开(公告)号：AU2011318585B2
公开(公告)日：2015-08-06
申请号：AU2011318585
申请日：2011-02-15
Applicant: SPECTRASENSORS INC
Inventor： FEITISCH ALFRED , KELLER LUTZ , LIU XIANG , SCHREMPEL MATHIAS , HELBLEY KEITH BENJAMIN
Abstract: A valid state of an analytical system that includes a light source (102) and a detector (106) can be verified by determining that deviation of first light intensity data quantifying a first intensity of light received at the detector from the light source after the light has passed at least once through each of a reference gas in a validation cell (114) and a zero gas from a stored data set does not exceed a pre-defined threshold deviation. The stored data set can represent at least one previous measurement collected during a previous instrument validation process performed on the analytical system. The reference gas can include a known amount of an analyte. A concentration of the analyte in a sample gas in a measurement cell (112) can be determined by correcting second light intensity data quantifying a second intensity of the light received at the detector after the light passes at least once through each of the reference gas in the validation cell and a sample gas containing an unknown concentration of the analyte compound. Related systems, methods, and articles of manufacture are also described.
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公开(公告)号：CA2829946A1
公开(公告)日：2012-09-20
申请号：CA2829946
申请日：2012-03-14
Applicant: SPECTRASENSORS INC
Inventor： NEUBAUER GABI , FEITISCH ALFRED , SCHREMPEL MATHIAS
Abstract: A first contact surface ( 310 ) of a semiconductor laser chip ( 302 ) can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness of a metallic barrier layer to be applied to the first contact surface ( 310 ). A metallic barrier layer having the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip ( 302 ) can be soldered to a carrier mounting along the first contact surface ( 310 ) using a solder composition ( 306 ) by heating the soldering composition to less than a threshold temperature at which dissolution of the metallic barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.
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公开(公告)号：CA2829946C
公开(公告)日：2017-04-04
申请号：CA2829946
申请日：2012-03-14
Applicant: SPECTRASENSORS INC
Inventor： NEUBAUER GABI , FEITISCH ALFRED , SCHREMPEL MATHIAS
Abstract: A first contact surface ( 310 ) of a semiconductor laser chip ( 302 ) can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness of a metallic barrier layer to be applied to the first contact surface ( 310 ). A metallic barrier layer having the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip ( 302 ) can be soldered to a carrier mounting along the first contact surface ( 310 ) using a solder composition ( 306 ) by heating the soldering composition to less than a threshold temperature at which dissolution of the metallic barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.
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公开(公告)号：CA2844789C
公开(公告)日：2016-09-20
申请号：CA2844789
申请日：2012-08-14
Applicant: SPECTRASENSORS INC
Inventor： SCHREMPEL MATHIAS , FEITISCH ALFRED , NEUBAUER GABI
IPC: H01S5/022 , H01L23/485 , H01S5/042
Abstract: A first contact (310) surface of a semiconductor laser chip (302) is formed to a surface roughness selected to have a maximum peak to valley height that is substantially smaller than a diffusion barrier layer thickness. A diffusion barrier layer that includes a non-metallic, electrically-conducting compound and that has the barrier layer thickness is applied to the first contact surface, and the semiconductor laser chip is soldered to a carrier mounting (304) along the first contact surface using a solder composition (306) by heating the soldering composition to less than a threshold temperature at which dissolution of the barrier layer into the soldering composition occurs. Thereby the diffusion barrier remains contiguous. The non-metallic, electrically conducting compound may comprise at least one of titanium nitride, titanium oxy-nitride, tungsten nitride, cerium oxide and cerium gadolinium oxy-nitride
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公开(公告)号：AU2013334609A1
公开(公告)日：2015-04-16
申请号：AU2013334609
申请日：2013-10-23
Applicant: SPECTRASENSORS INC
Inventor： FEITISCH ALFRED , NEUBAUER GABI , SCHREMPEL MATHIAS
Abstract: A first contact surface (310) of a semiconductor laser chip (302) can be formed to a first target surface roughness and a second contact surface (312) of a carrier mounting (304) can be formed to a second target surface roughness. A first bond preparation layer (306) comprising a first metal can optionally be applied to the formed first contact surface, and a second bond preparation layer (308) comprising a second metal can optionally be applied to the formed second contact surface. Both preparation layers may be made of gold and diffusion bonding results from a heating of device under pressure. The first contact surface can be contacted with the second contact surface, and a solderless securing process can secure the semiconductor laser chip to the carrier mounting. Related systems, methods, articles of manufacture, and the like are also described.
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