公开(公告)号：JP2002229849A

公开(公告)日：2002-08-16

申请号：JP2001401897

申请日：2001-12-28

Applicant: ST MICROELECTRONICS SRL

Inventor： RIVA REGGIORI RICCARDO ,  SCHIPPERS STEFAN ,  SALI MAURO

IPC: G11C16/02 ,  G06F12/00 ,  G06F12/02 ,  G06F12/04 ,  G06F12/0893 ,  G11C7/10 ,  G11C16/26

Abstract: PROBLEM TO BE SOLVED: To reduce an average access time to a nonvolatile memory in a read- out phase. SOLUTION: In this method and device for reducing the average access time to the nonvolatile memory in the read-out phase, the read-out phase is generated from a matrix array 2 in a memory cell having a related logic for recognizing an access address to the memory both in a page mode and a burst mode. The method is characterized by providing a buffer memory 4 related to the cell matrix array 2, and housing memory words to the prescribed number (n) in the buffer memory 4 after the last read-out of the cell matrix array 2.