公开(公告)号：WO2013165620A1

公开(公告)日：2013-11-07

申请号：PCT/US2013/032613

申请日：2013-03-15

Applicant: STC.UNM

Inventor： BRUECK, Steven, R., J. ,  LEE, Seung-Chang ,  WETZEL, Christian ,  DETCHPROHM, Theeradetch ,  STARK, Christoph

IPC: H01L21/20 ,  H01L33/12

CPC classification number: H01L29/2003 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02587 ,  H01L21/02598 ,  H01L21/02658 ,  H01L29/15 ,  H01L33/16 ,  H01L33/24

Abstract: A semiconductor device is disclosed. The semiconductor device includes a substrate comprising a groove. A buffer layer is formed on a surface of the groove. The buffer layer comprising at least one material chosen from AIN, GaN or Al x Ga 1-x N, where x is between zero and one. An epitaxially grown semiconductor material is disposed over the buffer layer, at least a portion of the epitaxially grown semiconductor material having a cubic crystalline phase structure. Methods of forming the semiconductor devices are also taught.

Abstract translation: 公开了一种半导体器件。 半导体器件包括包括沟槽的衬底。 在槽的表面上形成缓冲层。 所述缓冲层包含至少一种选自AIN，GaN或Al x Ga 1-x N的材料，其中x在0和1之间。 外延生长的半导体材料设置在缓冲层之上，至少部分外延生长的半导体材料具有立方晶相结构。 还教导了形成半导体器件的方法。

公开(公告)号：EP3152788A1

公开(公告)日：2017-04-12

申请号：EP15807428.6

申请日：2015-06-09

Applicant: Stc.Unm

Inventor： BRUECK, Steven, R., J. ,  NEUMANN, Alexander ,  ZARKESH-HA, Payman

IPC: H01L33/58 ,  H01L33/48 ,  F21S2/00

CPC classification number: G01J1/06 ,  G01J1/44 ,  G01J3/0218 ,  G01J3/0259 ,  G01J3/18 ,  G01J3/1895 ,  G01J3/2803 ,  G01J2001/448 ,  G02B6/00 ,  G02B6/10 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/124 ,  H01L27/1446 ,  H01L31/02019 ,  H01L31/02164 ,  H01L31/02327 ,  H01L31/103

Abstract: A 2-D sensor array includes a semiconductor substrate and a plurality of pixels disposed on the semiconductor substrate. Each pixel includes a coupling region and a junction region, and a slab waveguide structure disposed on the semiconductor substrate and extending from the coupling region to the region. The slab waveguide includes a confinement layer disposed between a first cladding layer and a second cladding layer. The first cladding and the second cladding each have a refractive index that is lower than a refractive index of the confinement layer. Each pixel also includes a coupling structure disposed in the coupling region and within the slab waveguide. The coupling structure includes two materials having different indices of refraction arranged as a grating defined by a grating period. The junction region comprises a p-n junction in communication with electrical contacts for biasing and collection of carriers resulting from absorption of incident radiation.

Abstract translation: 2维传感器阵列包括半导体衬底和设置在半导体衬底上的多个像素。 每个像素包括耦合区域和结区域，以及设置在半导体衬底上并从耦合区域延伸到该区域的平板波导结构。 平板波导包括设置在第一包层和第二包层之间的限制层。 第一包层和第二包层各自具有低于限制层的折射率的折射率。 每个像素还包括设置在耦合区域中并且在平板波导内的耦合结构。 耦合结构包括具有不同的折射率布置为由光栅周期限定的光栅的两种材料。 结区域包括与电触点连通的p-n结，用于偏移和收集由吸收入射辐射引起的载流子。

公开(公告)号：WO2015191557A1

公开(公告)日：2015-12-17

申请号：PCT/US2015/034868

申请日：2015-06-09

Applicant: STC.UNM

Inventor： BRUECK, Steven, R., J. ,  NEUMANN, Alexander ,  ZARKESH-HA, Payman

IPC: H01L33/58 ,  H01L33/48 ,  F21S2/00

CPC classification number: G01J1/06 ,  G01J1/44 ,  G01J3/0218 ,  G01J3/0259 ,  G01J3/18 ,  G01J3/1895 ,  G01J3/2803 ,  G01J2001/448 ,  G02B6/00 ,  G02B6/10 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/124 ,  H01L27/1446 ,  H01L31/02019 ,  H01L31/02164 ,  H01L31/02327 ,  H01L31/103

Abstract: A 2-D sensor array includes a semiconductor substrate and a plurality of pixels disposed on the semiconductor substrate. Each pixel includes a coupling region and a junction region, and a slab waveguide structure disposed on the semiconductor substrate and extending from the coupling region to the region. The slab waveguide includes a confinement layer disposed between a first cladding layer and a second cladding layer. The first cladding and the second cladding each have a refractive index that is lower than a refractive index of the confinement layer. Each pixel also includes a coupling structure disposed in the coupling region and within the slab waveguide. The coupling structure includes two materials having different indices of refraction arranged as a grating defined by a grating period. The junction region comprises a p-n junction in communication with electrical contacts for biasing and collection of carriers resulting from absorption of incident radiation.

Abstract translation: 2维传感器阵列包括半导体衬底和设置在半导体衬底上的多个像素。 每个像素包括耦合区域和结区域，以及设置在半导体衬底上并从耦合区域延伸到该区域的平板波导结构。 平板波导包括设置在第一包层和第二包层之间的限制层。 第一包层和第二包层各自具有低于限制层的折射率的折射率。 每个像素还包括设置在耦合区域中并且在平板波导内的耦合结构。 耦合结构包括具有不同折射率的两种材料，其布置为由光栅周期限定的光栅。 结区域包括与电触点连通的p-n结，用于偏移和收集由吸收入射辐射引起的载流子。