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    PRESSURE SENSOR HAVING IMPROVED REJECTION OF UNDESIRED STIMULI
    2.
    发明申请
    PRESSURE SENSOR HAVING IMPROVED REJECTION OF UNDESIRED STIMULI 有权

    公开(公告)号：US20250130129A1

    公开(公告)日：2025-04-24

    申请号：US18915158

    申请日：2024-10-14

    Applicant: STMicroelectronics International N.V.

    Inventor： Filippo DANIELE ,  Enri DUQI ,  Lorenzo BALDO

    IPC: G01L19/04 ,  G01L9/00 ,  G01L13/02

    Abstract: A pressure sensor has a body having a first chamber and a second chamber hermetically separated from the first chamber; a first detection structure which is arranged in the first chamber, has a first deformable element and a first buried cavity within the first detection structure, wherein the first deformable element is configured to undergo a deformation as a function of a pressure difference between the first chamber and the first buried cavity. The sensor also has a second detection structure which is arranged in the second chamber, has a second deformable element and a second buried cavity within the second detection structure, wherein the second deformable element is configured to undergo a deformation as a function of a pressure difference between the second chamber and the second buried cavity. The sensor also has a first channel that extends into the body and is configured to fluidically couple the first buried cavity with the second chamber; and a second channel that extends into the body and is configured to fluidically couple the second buried cavity to the first chamber.

    LINEAR CAPACITIVE PRESSURE SENSOR
    3.
    发明公开
    LINEAR CAPACITIVE PRESSURE SENSOR 审中-公开

    公开(公告)号：US20240295454A1

    公开(公告)日：2024-09-05

    申请号：US18117070

    申请日：2023-03-03

    Applicant: STMicroelectronics International N.V.

    Inventor： Lorenzo BALDO ,  Filippo DANIELE ,  Enri DUQI

    IPC: G01L9/12

    CPC classification number: G01L9/12

    Abstract: A pressure-sensor includes a substrate with a cavity therein and a membrane suspended over the cavity. The cavity is connected to external air pressure so a change in external air pressure causes out-of-plane movement of the membrane. A frame suspended over the membrane includes a segment connected to the membrane but disconnected from other frame portions. A projection extends from the frame. A first spring is connected to the projection, a second spring is connected to the segment, and an end portion connects the springs so out-of-plane movement of the membrane applies out-of-plane force to the second spring, which is transferred to the first spring by the end portion and translated to an in-plane force by the first spring and applied to the projection. This causes lateral sliding movement of the frame with respect to the substrate. A capacitive-sensor detects sliding movement of the frame with respect to the substrate.

    INTEGRATED THERMAL SENSOR AND MANUFACTURING PROCESS THEREOF
    6.
    发明申请
    INTEGRATED THERMAL SENSOR AND MANUFACTURING PROCESS THEREOF 有权

    公开(公告)号：US20230087516A1

    公开(公告)日：2023-03-23

    申请号：US17931482

    申请日：2022-09-12

    Applicant: STMICROELECTRONICS S.R.L.

    Inventor： Enri DUQI ,  Maria Eloisa CASTAGNA

    IPC: H01L35/22 ,  H01L35/32 ,  H01L35/34

    Abstract: Integrated thermal sensor having a housing delimiting an internal space. A support region extends through the internal space; a plurality of thermocouple elements are carried by the support region and are electrically coupled to each other. Each thermocouple element is formed by a first and a second thermoelectrically active region of a first and, respectively, a second thermoelectrically active material, the first thermoelectrically active material having a first Seeback coefficient, the second thermoelectrically active material having a second Seeback coefficient, other than the first Seeback coefficient. At least one of the first and second thermoelectrically active regions is a silicon-based material. The first and second thermoelectrically active regions of each thermocouple element are formed by respective elongated regions extending at a mutual distance into the internal space of the housing, from and transversely to the support region.

    SEMICONDUCTOR INTEGRATED DEVICE WITH ELECTRICAL CONTACTS BETWEEN STACKED DIES AND CORRESPONDING MANUFACTURING PROCESS
    7.
    发明申请
    SEMICONDUCTOR INTEGRATED DEVICE WITH ELECTRICAL CONTACTS BETWEEN STACKED DIES AND CORRESPONDING MANUFACTURING PROCESS 有权

    公开(公告)号：US20210147222A1

    公开(公告)日：2021-05-20

    申请号：US17161367

    申请日：2021-01-28

    Applicant: STMICROELECTRONICS S.R.L.

    Inventor： Enri DUQI ,  Lorenzo BALDO ,  Domenico GIUSTI

    IPC: B81C1/00 ,  B81B7/00

    Abstract: An integrated device includes: a first die; a second die coupled in a stacked way on the first die along a vertical axis; a coupling region arranged between facing surfaces of the first die and of the second die, which face one another along the vertical axis and lie in a horizontal plane orthogonal to the vertical axis, for mechanical coupling of the first and second dies; electrical-contact elements carried by the facing surfaces of the first and second dies, aligned in pairs along the vertical axis; and conductive regions arranged between the pairs of electrical-contact elements carried by the facing surfaces of the first and second dies, for their electrical coupling. Supporting elements are arranged at the facing surface of at least one of the first and second dies and elastically support respective electrical-contact elements.

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