公开(公告)号：US20240272004A1

公开(公告)日：2024-08-15

申请号：US18108154

申请日：2023-02-10

Applicant: STMicroelectronics International N.V.

Inventor： Enri DUQI ,  Giorgio ALLEGATO

IPC: G01J5/10 ,  B81B7/00 ,  B81C1/00

CPC classification number: G01J5/10 ,  B81B7/0038 ,  B81B7/007 ,  B81C1/00285 ,  B81C1/00301 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/07 ,  B81B2207/097 ,  B81C2203/0109 ,  B81C2203/0792 ,  G01J2005/106

Abstract: Disclosed herein is a method of forming a thermal sensor, including patterning an active layer on a first face of a handle substrate to form a frame, a mass carrying at least one thermally isolated MOS (TMOS) transistor, and a spring structure connecting the mass to the frame while thermally isolating the mass from the frame. The frame is then bonded to pads on a first face of an integrated circuit substrate. The handle substrate is removed, and a top cap is bonded to the first face of the integrated circuit substrate to enclose at least the mass and spring within the sealed cavity.

公开(公告)号：US20240315671A1

公开(公告)日：2024-09-26

申请号：US18123602

申请日：2023-03-20

Applicant: STMicroelectronics International N.V.

Inventor： Federico VERCESI ,  Giorgio ALLEGATO ,  Tarek AFIFI AFIFI ,  Sonia COSTANTINI

IPC: A61B8/00 ,  A61B8/08

CPC classification number: A61B8/4483 ,  A61B8/52

Abstract: A PMUT includes a substrate being doped and having a plurality of conductive vias formed therein, each conductive via formed of a portion of the substrate extending completely from a back side of the substrate to a front side of the substrate and being encircled by an isolating structure that electrically isolates that portion of the substrate from other portions of the substrate. An insulating layer stacked on the front side of the substrate and has through-holes therein over the plurality of conductive vias. An interconnection layer is stacked on the insulating layer and is connected to the plurality of conductive vias. A membrane carried is by the interconnection layer and underlying substrate, the membrane being shaped so as to delimit a chamber. A piezoelectric stack formed on the membrane over the chamber and vibrates the membrane in response to application of an alternating voltage to the piezoelectric stack.

公开(公告)号：US20250145453A1

公开(公告)日：2025-05-08

申请号：US18925494

申请日：2024-10-24

Applicant: STMicroelectronics International N.V.

Inventor： Lorenzo CORSO ,  Federico VERCESI ,  Gabriele GATTERE ,  Anna GUERRA ,  Carlo VALZASINA ,  Giorgio ALLEGATO

IPC: B81B7/00 ,  B81C1/00

Abstract: MEMS device having a substrate of semiconductor material; a first structural layer of semiconductor material, on the substrate; a second structural layer of semiconductor material, on the first structural layer; an active portion, accommodating active structures formed in the first structural layer and/or in the second structural layer; a connection portion, accommodating a plurality of connection structures and arranged laterally to the active portion; and a plurality of conductive regions, arranged on the substrate and extending between the active portion and the connection portion. Each connection structure is formed by a first connection portion, in electrical contact with a respective conductive region and formed in the first structural layer, and by a second connection portion, on the first connection portion and in electrical continuity therewith, the second connection portion formed in the second structural layer. The first connection portion has a greater thickness than the second connection portion.

公开(公告)号：US20250002332A1

公开(公告)日：2025-01-02

申请号：US18745739

申请日：2024-06-17

Applicant: STMicroelectronics International N.V.

Inventor： Giorgio ALLEGATO ,  Paolo FERRARI ,  Laura OGGIONI

IPC: B81B7/02 ,  B81C3/00 ,  G01C19/5783 ,  G01L9/00

Abstract: Described herein is a microelectromechanical sensor device, comprising: a stack of a first die that integrates a pressure-detection structure and a second die that integrates an inertial detection structure, the first die constituting a cap for the inertial detection structure and being bonded to the second die so as to define a hermetic cavity. The first die has a first substrate, having a front surface and a rear surface that is bonded to said second die, a buried cavity being buried and entirely contained in the first substrate and being arranged in a position corresponding to the front surface, from which it is separated by a membrane. In particular, the aforesaid buried cavity is distinct and separate from the hermetic cavity.

公开(公告)号：US20240391760A1

公开(公告)日：2024-11-28

申请号：US18665062

申请日：2024-05-15

Applicant: STMicroelectronics International N.V.

Inventor： Silvia NICOLI ,  Giorgio ALLEGATO ,  Filippo DANIELE ,  Andrea NOMELLINI ,  Maria Carolina TURI

IPC: B81C1/00 ,  B81B3/00

Abstract: A MEMS pressure transducer includes a semiconductor body, a lower dielectric region arranged above the semiconductor body, and a fixed electrode region and a lower anchoring region, which are formed by conductive material, are arranged on the lower dielectric region and are laterally separated from each other. A membrane of conductive material is suspended above the fixed electrode region so as to delimit a cavity upwardly, the fixed electrode region facing the cavity, the membrane being deformable as a function of pressure and forming a variable capacitor together with the fixed electrode region. An upper anchoring region of conductive material laterally delimits the cavity and is interposed, in direct contact, between the membrane and the lower anchoring region.