公开(公告)号：US20250145453A1

公开(公告)日：2025-05-08

申请号：US18925494

申请日：2024-10-24

Applicant: STMicroelectronics International N.V.

Inventor： Lorenzo CORSO ,  Federico VERCESI ,  Gabriele GATTERE ,  Anna GUERRA ,  Carlo VALZASINA ,  Giorgio ALLEGATO

IPC: B81B7/00 ,  B81C1/00

Abstract: MEMS device having a substrate of semiconductor material; a first structural layer of semiconductor material, on the substrate; a second structural layer of semiconductor material, on the first structural layer; an active portion, accommodating active structures formed in the first structural layer and/or in the second structural layer; a connection portion, accommodating a plurality of connection structures and arranged laterally to the active portion; and a plurality of conductive regions, arranged on the substrate and extending between the active portion and the connection portion. Each connection structure is formed by a first connection portion, in electrical contact with a respective conductive region and formed in the first structural layer, and by a second connection portion, on the first connection portion and in electrical continuity therewith, the second connection portion formed in the second structural layer. The first connection portion has a greater thickness than the second connection portion.