公开(公告)号：EP2978241A1

公开(公告)日：2016-01-27

申请号：EP15177808.1

申请日：2015-07-22

Applicant: STMicroelectronics S.r.l.

Inventor： NICOLLINI, Germano ,  BARBIERI, Andrea ,  BARBIERI, Federica ,  DANIONI, Alberto ,  MARINO, Edoardo ,  PERNICI, Sergio

IPC: H04R3/00

CPC classification number: H04R19/04 ,  H04R3/00 ,  H04R2201/003

Abstract: Described herein is a MEMS acoustic transducer device (42) having: a capacitive microelectromechanical sensing structure (1) ; and a biasing circuit (20), including a voltage-boosting circuit (9) that supplies a boosted voltage (V CP ) on an output terminal (9a), and an insulating circuit element (10), defining a high impedance, set between the output terminal (9a) and a terminal of the sensing structure (1), which defines a first high-impedance node (N 1 ) associated to the insulating circuit element (10). The biasing circuit (20) has: a pre-charge stage (24) that generates at least one first pre-charge voltage (V pre1 ) on a first output (Out 1 ) thereof, as a function of, and distinct from, the boosted voltage (V CP ); and at least one first switch element (SW 1 ), set between the first output (Out 1 ) and the first high-impedance node (N 1 ). The first switch element (SW 1 ) is operable for selectively connecting the first high-impedance node (N 1 ) to the first output (Out 1 ), during a phase of start-up of the biasing circuit (20), for biasing the first high-impedance node to the first pre-charge voltage.

Abstract translation: 这里描述的是一种MEMS声学换能器装置（42），其具有：电容性微机电感测结构（1）; 以及偏置电路（20），其包括在输出端子（9a）上提供升压电压（V CP）的升压电路（9）和限定高阻抗的绝缘电路元件（10），所述绝缘电路元件 输出端子（9a）和感测结构（1）的端子，其限定与绝缘电路元件（10）相关联的第一高阻抗节点（N 1）。 偏置电路（20）具有：预充电阶段（24），其在其第一输出（Out 1）上产生至少一个第一预充电电压（V pre1），作为和/ 升压电压（V CP）; 以及设置在第一输出（Out 1）和第一高阻抗节点（N1）之间的至少一个第一开关元件（SW 1）。 第一开关元件（SW 1）可操作用于在偏置电路（20）的启动阶段期间选​​择性地将第一高阻抗节点（N1）连接到第一输出（输出1），以便偏置 第一个高阻抗节点到第一个预充电电压。

公开(公告)号：EP3691123A1

公开(公告)日：2020-08-05

申请号：EP20154967.2

申请日：2020-01-31

Applicant: STMicroelectronics S.r.l.

Inventor： DANIONI, Alberto

IPC: H03F3/70 ,  H03F3/30 ,  H03F3/183 ,  H03F3/345 ,  H03F3/45 ,  H04R3/00

Abstract: A charge amplifier circuit couplable to a transducer (8) which generates an electrical charge varying as a function of an external stimulus, the charge amplifier circuit (30) including an amplification stage (18) having an input node (IN), couplable to the transducer, and an output node (OUT), the amplification stage biasing the input node (IN) at a first DC voltage (V CMI ). The charge amplifier circuit includes a feedback circuit (22, 32) with a feedback capacitor (20), electrically interposed between the input and output nodes of the amplification stage. The feedback circuit further comprises: a resistor (22) electrically coupled to the input node; and a level-shifter circuit (34, 36), electrically interposed between the resistor and the output node. The level-shifter circuit biases the output node at a second DC voltage (V CMO ), as a function of the difference between the second DC voltage and a reference voltage (V ref ).

公开(公告)号：EP2978241B1

公开(公告)日：2017-12-20

申请号：EP15177808.1

申请日：2015-07-22

Applicant: STMicroelectronics S.r.l.

Inventor： NICOLLINI, Germano ,  BARBIERI, Andrea ,  BARBIERI, Federica ,  DANIONI, Alberto ,  MARINO, Edoardo ,  PERNICI, Sergio

IPC: H04R3/00

CPC classification number: H04R19/04 ,  H04R3/00 ,  H04R2201/003

Abstract: Described herein is a MEMS acoustic transducer device (42) having: a capacitive microelectromechanical sensing structure (1) ; and a biasing circuit (20), including a voltage-boosting circuit (9) that supplies a boosted voltage (V CP ) on an output terminal (9a), and an insulating circuit element (10), defining a high impedance, set between the output terminal (9a) and a terminal of the sensing structure (1), which defines a first high-impedance node (N 1 ) associated to the insulating circuit element (10). The biasing circuit (20) has: a pre-charge stage (24) that generates at least one first pre-charge voltage (V pre1 ) on a first output (Out 1 ) thereof, as a function of, and distinct from, the boosted voltage (V CP ); and at least one first switch element (SW 1 ), set between the first output (Out 1 ) and the first high-impedance node (N 1 ). The first switch element (SW 1 ) is operable for selectively connecting the first high-impedance node (N 1 ) to the first output (Out 1 ), during a phase of start-up of the biasing circuit (20), for biasing the first high-impedance node to the first pre-charge voltage.