公开(公告)号：EP2978241A1

公开(公告)日：2016-01-27

申请号：EP15177808.1

申请日：2015-07-22

Applicant: STMicroelectronics S.r.l.

Inventor： NICOLLINI, Germano ,  BARBIERI, Andrea ,  BARBIERI, Federica ,  DANIONI, Alberto ,  MARINO, Edoardo ,  PERNICI, Sergio

IPC: H04R3/00

CPC classification number: H04R19/04 ,  H04R3/00 ,  H04R2201/003

Abstract: Described herein is a MEMS acoustic transducer device (42) having: a capacitive microelectromechanical sensing structure (1) ; and a biasing circuit (20), including a voltage-boosting circuit (9) that supplies a boosted voltage (V CP ) on an output terminal (9a), and an insulating circuit element (10), defining a high impedance, set between the output terminal (9a) and a terminal of the sensing structure (1), which defines a first high-impedance node (N 1 ) associated to the insulating circuit element (10). The biasing circuit (20) has: a pre-charge stage (24) that generates at least one first pre-charge voltage (V pre1 ) on a first output (Out 1 ) thereof, as a function of, and distinct from, the boosted voltage (V CP ); and at least one first switch element (SW 1 ), set between the first output (Out 1 ) and the first high-impedance node (N 1 ). The first switch element (SW 1 ) is operable for selectively connecting the first high-impedance node (N 1 ) to the first output (Out 1 ), during a phase of start-up of the biasing circuit (20), for biasing the first high-impedance node to the first pre-charge voltage.

Abstract translation: 这里描述的是一种MEMS声学换能器装置（42），其具有：电容性微机电感测结构（1）; 以及偏置电路（20），其包括在输出端子（9a）上提供升压电压（V CP）的升压电路（9）和限定高阻抗的绝缘电路元件（10），所述绝缘电路元件 输出端子（9a）和感测结构（1）的端子，其限定与绝缘电路元件（10）相关联的第一高阻抗节点（N 1）。 偏置电路（20）具有：预充电阶段（24），其在其第一输出（Out 1）上产生至少一个第一预充电电压（V pre1），作为和/ 升压电压（V CP）; 以及设置在第一输出（Out 1）和第一高阻抗节点（N1）之间的至少一个第一开关元件（SW 1）。 第一开关元件（SW 1）可操作用于在偏置电路（20）的启动阶段期间选​​择性地将第一高阻抗节点（N1）连接到第一输出（输出1），以便偏置 第一个高阻抗节点到第一个预充电电压。

公开(公告)号：EP2978241B1

公开(公告)日：2017-12-20

申请号：EP15177808.1

申请日：2015-07-22

Applicant: STMicroelectronics S.r.l.

Inventor： NICOLLINI, Germano ,  BARBIERI, Andrea ,  BARBIERI, Federica ,  DANIONI, Alberto ,  MARINO, Edoardo ,  PERNICI, Sergio

IPC: H04R3/00

CPC classification number: H04R19/04 ,  H04R3/00 ,  H04R2201/003

Abstract: Described herein is a MEMS acoustic transducer device (42) having: a capacitive microelectromechanical sensing structure (1) ; and a biasing circuit (20), including a voltage-boosting circuit (9) that supplies a boosted voltage (V CP ) on an output terminal (9a), and an insulating circuit element (10), defining a high impedance, set between the output terminal (9a) and a terminal of the sensing structure (1), which defines a first high-impedance node (N 1 ) associated to the insulating circuit element (10). The biasing circuit (20) has: a pre-charge stage (24) that generates at least one first pre-charge voltage (V pre1 ) on a first output (Out 1 ) thereof, as a function of, and distinct from, the boosted voltage (V CP ); and at least one first switch element (SW 1 ), set between the first output (Out 1 ) and the first high-impedance node (N 1 ). The first switch element (SW 1 ) is operable for selectively connecting the first high-impedance node (N 1 ) to the first output (Out 1 ), during a phase of start-up of the biasing circuit (20), for biasing the first high-impedance node to the first pre-charge voltage.