公开(公告)号：EP1965427A1

公开(公告)日：2008-09-03

申请号：EP07425107.5

申请日：2007-02-28

Applicant: STMicroelectronics S.r.l.

Inventor： Magistretti, Michele ,  Pellizzer, Fabio ,  Benvenuti, Augusto

IPC: H01L27/102

CPC classification number: H01L27/1022 ,  H01L21/76205 ,  H01L21/76224 ,  H01L27/2445 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

Abstract: A process for manufacturing an array of bipolar transistors, wherein deep field insulation regions (26) of dielectric material are formed in a semiconductor body (21), thereby defining a plurality of active areas (22), insulated from each other and a plurality of bipolar transistors are formed in each active area. In particular, in each active area, a first conduction region (24) is formed at a distance from the surface of the semiconductor body (21); a control region (25) is formed on the first conduction region (24); and, in each control region, at least two second conduction regions (31) and at least one control contact region (36) are formed. The control contact region (36) is interposed between the second conduction regions (31) and at least two surface field insulation regions (29) are thermally grown in each active area (22) between the control contact region (36) and the second conduction regions (31).

Abstract translation: 一种用于制造双极晶体管阵列的方法，其中介电材料的深场绝缘区域（26）形成在半导体本体（21）中，从而限定出彼此绝缘的多个有源区域（22）和多个 在每个有效区域中形成双极晶体管。 特别地，在每个有源区域中，形成与半导体本体（21）的表面相距一定距离的第一导电区域（24）。 在所述第一导电区域（24）上形成控制区域（25）。 并且在每个控制区域中形成至少两个第二导电区域（31）和至少一个控制接触区域（36）。 控制接触区域（36）介于第二导电区域（31）之间，并且至少两个表面场绝缘区域（29）在控制接触区域（36）和第二导电区域（36）之间的每个有源区域（22）中热生长 地区（31）。