公开(公告)号：EP0945869B1

公开(公告)日：2004-11-17

申请号：EP98830188.3

申请日：1998-03-27

Applicant: STMicroelectronics S.r.l.

Inventor： Maloberti, Franco ,  Oneto, Andrea ,  Torelli, Guido

IPC: G11C11/00 ,  G11C11/56

CPC classification number: G11C16/26 ,  G11C11/5621 ,  G11C11/5642

公开(公告)号：EP0585505B1

公开(公告)日：2001-10-31

申请号：EP92830335.3

申请日：1992-06-26

Applicant: STMicroelectronics S.r.l.

Inventor： Maloberti, Franco ,  Marchesi, Gianmarco ,  Torelli, Guido

IPC: H03K19/00 ,  H03K19/003 ,  G11C7/00

CPC classification number: G11C7/1057 ,  G11C7/1051 ,  H03K19/00361

公开(公告)号：EP0945869A1

公开(公告)日：1999-09-29

申请号：EP98830188.3

申请日：1998-03-27

Applicant: STMicroelectronics S.r.l.

Inventor： Maloberti, Franco ,  Oneto, Andrea ,  Torelli, Guido

IPC: G11C11/00 ,  G11C11/56

CPC classification number: G11C16/26 ,  G11C11/5621 ,  G11C11/5642

Abstract: Method (200) for reading a multiple-level memory cell (C 12 ) capable of taking on three or more states which are represented by different values of a physical quantity (Icell) and each of which is associated with a corresponding logical value (LVcell), comprising the steps of setting (210) an actual physical quantity (Is 1 ) to a value correlated with the value of the physical quantity (Icell) corresponding to the state of the memory cell (C 12 ), and repeating (235), up to the complete determination of the logical value (LVcell) corresponding to the state of the memory cell (C 12 ), a cycle (215-235) comprising the steps of setting (227, 232) a component of the logical value (D i ) to a value which is a function of a range in which the actual physical quantity (Is i ) lies, determined by comparing (215, 220) the actual physical quantity (Is i ) with at least one reference physical quantity (Ir i ) having a predetermined value lying between a minimum value and a maximum value for the actual physical quantity (Is i ), and setting (237) the actual physical quantity for a possible next cycle (Is (i+1) ) to a relative value of the actual physical quantity (Is i ) with respect to the range in which it lies.

Abstract translation: 用于读取能够承受三个或更多个状态的多级存储单元（C12）的方法（200），其由物理量（Icell）的不同值表示，并且每个与相应的逻辑值（LVcell）相关联， 包括以下步骤：将实际物理量（Is1）设置为与存储单元（C12）的状态对应的物理量（Icell）的值相关的值，并重复（235），直到 对与存储单元（C12）的状态相对应的逻辑值（LVcell）的完全确定，包括将逻辑值（Di）的分量设置为（227,232）的步骤的周期（215-235） 通过将实际物理量（Isi）与具有预定值之间的至少一个参考物理量（Iri）进行比较（215,220）来确定实际物理量（Isi）所在的范围的函数的值， 实际物理的最小值和最大值 数量（Isi）和将可能的下一个周期的实际物理量（Is（i + 1））设置为实际物理量（Isi）相对于其所在的范围的相对值。