Abstract:
Method (200) for reading a multiple-level memory cell (C 12 ) capable of taking on three or more states which are represented by different values of a physical quantity (Icell) and each of which is associated with a corresponding logical value (LVcell), comprising the steps of setting (210) an actual physical quantity (Is 1 ) to a value correlated with the value of the physical quantity (Icell) corresponding to the state of the memory cell (C 12 ), and repeating (235), up to the complete determination of the logical value (LVcell) corresponding to the state of the memory cell (C 12 ), a cycle (215-235) comprising the steps of setting (227, 232) a component of the logical value (D i ) to a value which is a function of a range in which the actual physical quantity (Is i ) lies, determined by comparing (215, 220) the actual physical quantity (Is i ) with at least one reference physical quantity (Ir i ) having a predetermined value lying between a minimum value and a maximum value for the actual physical quantity (Is i ), and setting (237) the actual physical quantity for a possible next cycle (Is (i+1) ) to a relative value of the actual physical quantity (Is i ) with respect to the range in which it lies.