公开(公告)号：EP0915513A1

公开(公告)日：1999-05-12

申请号：EP97830536.5

申请日：1997-10-23

Applicant: STMicroelectronics S.r.l.

Inventor： Ferrari, Paolo ,  Manfredi, Armando ,  Vigna, Benedetto

IPC: H01L23/64 ,  H01L21/3205 ,  H01L27/06 ,  H01L23/522

CPC classification number: H01L28/10 ,  H01L23/5227 ,  H01L23/645 ,  H01L27/0688 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The integrated inductor (40) comprises a coil (21b) of metal which is formed in the second metal level (21). The coil is supported by a bracket (20a) extending above spaced from a semiconductor material body (3) by an air gap (28) obtained by removing a sacrificial region formed in the first metal level (16). The bracket (20a) is carried by the semiconductor material body (3) through support regions (20b) which are arranged peripherally on the bracket (20a) and are separated from one another by through apertures (36) which are connected to the air gap (28). A thick oxide region (4) extends above the semiconductor material body (3), below the air gap (28), to reduce the capacitive coupling between the inductor and the semiconductor material body (3). The inductor thus has a high quality factor, and is produced by a process compatible with present microelectronics processes.

Abstract translation: 集成电感器（40）包括形成在第二金属层（21）中的金属线圈（21b）。 线圈由通过去除形成在第一金属层（16）中的牺牲区域而获得的气隙（28）的与半导体材料体（3）间隔开的托架（20a）支撑。 托架（20a）由半导体材料体（3）通过支撑区域（20b）承载，支撑区域（20b）周向地布置在托架（20a）上并且通过孔（36）彼此分离，孔（36）连接到气隙 （28）。 厚氧化物区域（4）在半导体材料体（3）的上方延伸到气隙（28）的下方，以减小电感器和半导体材料体（3）之间的电容耦合。 因此，电感器具有高品质因数，并且通过与当前微电子工艺兼容的工艺产生。