公开(公告)号：EP0822398B1

公开(公告)日：2003-04-23

申请号：EP96830435.2

申请日：1996-07-31

Applicant: STMicroelectronics S.r.l.

Inventor： Vigna, Benedetto ,  Ferrari, Paolo ,  Villa, Flavio

IPC: G01L9/06

CPC classification number: G01L9/0042 ,  G01L9/0055

公开(公告)号：EP0828160B1

公开(公告)日：2001-12-05

申请号：EP96830464.2

申请日：1996-09-10

Applicant: STMicroelectronics S.r.l.

Inventor： Vigna, Benedetto ,  Ferrari, Paolo ,  Mastromatteo, Ubaldo

IPC: G01P1/00 ,  G01P15/11

CPC classification number: G01P15/11

公开(公告)号：EP1039529A1

公开(公告)日：2000-09-27

申请号：EP99830158.4

申请日：1999-03-22

Applicant: STMicroelectronics S.r.l.

Inventor： Vigna, Benedetto ,  Ferrari, Paolo

IPC: H01L21/74 ,  H01L23/535 ,  H02N1/00 ,  G11B21/08

CPC classification number: H02N1/008 ,  G11B5/5552 ,  G11B21/106 ,  G11B21/21

Abstract: The method is intended for manufacturing a microintegrated structure (10), typically a microactuator for a hard-disk drive unit and includes the steps of: forming interconnection regions (32a,32b) in a substrate (31) of semiconductor material; forming a first monocrystalline epitaxial layer (33); forming lower sinker regions (35a,35b) in the monocrystalline epitaxial layer (33) and in direct contact with the interconnection regions (32a,32b); forming insulating material regions (40,41) on a structure portion of the monocrystalline epitaxial layer (33); growing a second layer (45) formed by a polycrystalline portion (45') above the insulating material region and elsewhere a monocrystalline portion (45''), and forming upper sinker regions (46,47) in the second layer (45) and in direct contact with the lower sinker regions (35a). In this way no PN junctions are present inside the polycrystalline portion (45') of the second layer and the structure has a high breakdown voltage.

Abstract translation: 该方法的目的是用于制造microintegrated结构（10）典型地，对于硬盘驱动器单元的微致动，并且包括以下步骤：形成互连区域（32A，32B）在（31）的半导体材料衬底; 形成第一单晶外延层（33）; 形成下下沉区域（35A，35B）在单晶外延层（33）以及与所述互连区域的直接接触（32A，32B）; 在单晶外延层（33）的结构部分上形成绝缘材料的区域（40,41）; 在第二层“的绝缘材料区域和其他区域之上的单晶部分（45生长由多晶部分（45）”形成的第二层（45）“），并形成上部下沉区域（46,47）（45）和 在与下下沉区（35A）直接接触。 以这种方式没有PN结是存在于第二层的多晶部分（45“）内并且该结构具有高的击穿电压。

公开(公告)号：EP0915513A1

公开(公告)日：1999-05-12

申请号：EP97830536.5

申请日：1997-10-23

Applicant: STMicroelectronics S.r.l.

Inventor： Ferrari, Paolo ,  Manfredi, Armando ,  Vigna, Benedetto

IPC: H01L23/64 ,  H01L21/3205 ,  H01L27/06 ,  H01L23/522

CPC classification number: H01L28/10 ,  H01L23/5227 ,  H01L23/645 ,  H01L27/0688 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The integrated inductor (40) comprises a coil (21b) of metal which is formed in the second metal level (21). The coil is supported by a bracket (20a) extending above spaced from a semiconductor material body (3) by an air gap (28) obtained by removing a sacrificial region formed in the first metal level (16). The bracket (20a) is carried by the semiconductor material body (3) through support regions (20b) which are arranged peripherally on the bracket (20a) and are separated from one another by through apertures (36) which are connected to the air gap (28). A thick oxide region (4) extends above the semiconductor material body (3), below the air gap (28), to reduce the capacitive coupling between the inductor and the semiconductor material body (3). The inductor thus has a high quality factor, and is produced by a process compatible with present microelectronics processes.

Abstract translation: 集成电感器（40）包括形成在第二金属层（21）中的金属线圈（21b）。 线圈由通过去除形成在第一金属层（16）中的牺牲区域而获得的气隙（28）的与半导体材料体（3）间隔开的托架（20a）支撑。 托架（20a）由半导体材料体（3）通过支撑区域（20b）承载，支撑区域（20b）周向地布置在托架（20a）上并且通过孔（36）彼此分离，孔（36）连接到气隙 （28）。 厚氧化物区域（4）在半导体材料体（3）的上方延伸到气隙（28）的下方，以减小电感器和半导体材料体（3）之间的电容耦合。 因此，电感器具有高品质因数，并且通过与当前微电子工艺兼容的工艺产生。

公开(公告)号：EP0895276A1

公开(公告)日：1999-02-03

申请号：EP97830406.1

申请日：1997-07-31

Applicant: STMicroelectronics S.r.l.

Inventor： Murari, Bruno ,  Ferrari, Paolo ,  Vigna, Benedetto

IPC: H01L21/00 ,  H01L21/762 ,  G01L9/00 ,  F16C11/06

CPC classification number: B81C1/00246 ,  B81B2203/033 ,  B81C2201/0109 ,  B81C2201/0114 ,  B81C2201/0115 ,  B81C2203/0742 ,  G01P15/0802 ,  G01P15/097 ,  H01L21/764

Abstract: The process comprises forming a buried sacrificial layer (5) of porous silicon in the starting substrate (2) and then a single-crystal epitaxial layer (7) intended to accommodate both the sensitive element and the integrated circuit. After forming electronic components (12, 18) in the epitaxial layer, the epitaxial layer (7) is anisotropically etched over the buried sacrificial layer (5) to form trenches (27) through which the buried sacrificial layer is then etched and removed. The suspended mass (30) thus obtained has high mechanical properties, high thickness, the process is wholly compatible with standard microelectronics techniques and can be implemented at low cost.

Abstract translation: 该工艺包括在起始衬底（2）中形成多孔硅的掩埋牺牲层（5），然后形成旨在兼容敏感元件和集成电路的单晶外延层（7）。 在外延层中形成电子部件（12,18）之后，在掩埋牺牲层（5）上各向异性地蚀刻外延层（7）以形成沟槽（27），然后通过该沟槽蚀刻和去除掩埋牺牲层。 这样获得的悬浮物（30）具有高机械性能，高厚度，该工艺与标准微电子技术完全兼容，并且可以以低成本实现。

公开(公告)号：EP0886264A1

公开(公告)日：1998-12-23

申请号：EP97830291.7

申请日：1997-06-19

Applicant: STMicroelectronics S.r.l.

Inventor： Murari, Bruno ,  Vigna, Benedetto ,  Ferrari, Paolo

IPC: G11B5/55 ,  G11B20/10

CPC classification number: G11B21/12 ,  G11B5/5552 ,  G11B5/5582 ,  G11B21/24

Abstract: A suspension arm (125) for a head (120) of a disk storage device comprises at least one wall (225, 230) substantially perpendicular to the disk (105) and having a portion (238, 239) which is deformable parallel to a plane extending through a longitudinal axis (235) of the suspension arm (125) and perpendicular to the at least one wall (225, 230), and piezoelectric means (240, 255) which can deform the portion (238, 239) in order correspondingly to move the head (120), the piezoelectric means (240-255) being fixed to the deformable portion (238, 239) of the at least one wall (225, 230).

Abstract translation: 用于磁盘存储装置的磁头（120）的悬架臂（125）包括基本上垂直于磁盘（105）的至少一个壁（225,230），并且具有可平行于磁盘的可变形的部分（238,239） 延伸穿过悬挂臂（125）的纵向轴线（235）并垂直于至少一个壁（225,230）的平面以及能够按顺序使部分（238,239）变形的压电装置（240,255） 相应地移动头部（120），压电装置（240-255）固定在至少一个壁（225,230）的可变形部分（238,239）上。

公开(公告)号：EP0886144A1

公开(公告)日：1998-12-23

申请号：EP97830290.9

申请日：1997-06-19

Applicant: STMicroelectronics S.r.l.

Inventor： Murari, Bruno ,  Vigna, Benedetto ,  Ferrari, Paolo

IPC: G01P15/08 ,  G01P1/02

CPC classification number: B81C1/0023 ,  G01P1/02 ,  G01P15/0802

Abstract: A sensor (100) with a movable microstructure comprises a sensitive element (105), formed in a first chip (110) of semiconductor material, for producing an electrical signal dependent on a movement of at least one movable microstructure relative to a surface of the first chip (110), the sensitive element (105) being enclosed in a hollow hermetic structure (115), and a circuitry (130) for processing said electrical signal, formed in a second chip (125) of semiconductor material, the hollow hermetic structure (115) including a metal wall (120) disposed on the surface of the first chip (110) around the sensitive element (105), and the second chip (125) being fixed to said wall (120).

Abstract translation: 具有可移动微结构的传感器（100）包括形成在半导体材料的第一芯片（110）中的敏感元件（105），用于产生取决于至少一个可移动微结构相对于表面的运动的电信号 第一芯片（110），敏感元件（105）封闭在中空密封结构（115）中，以及用于处理形成在半导体材料的第二芯片（125）中的所述电信号的电路（130），所述中空密封 结构（115）包括设置在所述第一芯片（110）的表面周围所述敏感元件（105）的金属壁（120），以及所述第二芯片（125）固定到所述壁（120）。

公开(公告)号：EP0881468A1

公开(公告)日：1998-12-02

申请号：EP98109368.5

申请日：1998-05-22

Applicant: STMicroelectronics S.r.l.

Inventor： Sax, Herbert ,  Murari, Bruno ,  Villa, Flavio ,  Vigna, Benedetto ,  Ferrari, Paolo

IPC: G01D5/14 ,  G01V3/08

CPC classification number: G01V3/081 ,  G01D5/145

Abstract: The bi-dimensional position sensor (1) can be advantageously used in the turn system controlled from the steering wheel of a vehicle and comprises a permanent magnet (3) fixed to a control lever (4) so as to move in a plane along a first (X) and a second (Y) direction and rotate about a third direction (W) orthogonal to the preceding ones. The permanent magnet is movable with respect to an integrated device comprising a first group of sensor elements (10 1 -10 3 ) arranged spaced along the first direction, a second group of sensor elements (10 4 -10 7 ) arranged spaced along the second direction and a third group of sensor elements (10 8 -10 9 ) detecting the angular position of the permanent magnet. Electronics integrated with the sensor elements generate a code associated with each position which the permanent magnet (3) may assume and a control signal (S) corresponding to the desired function.

Abstract translation: 二维位置传感器（1）可以有利地用于从车辆的方向盘控制的转向系统中，并且包括固定到控制杆（4）上的永磁体（3），以便在沿着 第一（X）和第二（Y）方向，并且绕与前一个正交的第三方向（W）旋转。 永磁体可相对于包括沿着第一方向间隔布置的第一组传感器元件（101-103）的集成装置移动，第二组传感器元件（104-107）沿第二方向间隔布置，第三组传感器元件 一组检测永磁体的角位置的传感器元件（108-109）。 与传感器元件集成的电子产生与永磁体（3）可能呈现的每个位置相关联的代码和对应于期望功能的控制信号（S）。

公开(公告)号：EP1798764A1

公开(公告)日：2007-06-20

申请号：EP05425885.0

申请日：2005-12-14

Applicant: STMicroelectronics S.r.l.

Inventor： Ottaviani, Giampiero c/o Masem ,  Corni, Federico c/o Masem ,  Ferrari, Paolo ,  Villa, Flavio Francesco

IPC: H01L21/762

CPC classification number: H01L21/76254

Abstract: In order to manufacture a layer (15) of semiconductor material, a first wafer (1) of semiconductor material is subjected to implantation to form a defect layer (6) at a distance from a first face; the first wafer is bonded to a second wafer (10), by putting an insulating layer present on the second wafer in contact with the first face of the first wafer. Then, hydrogen atoms (13) are introduced into the first wafer (1) through a second face (3) at an energy such as to avoid defects to be generated in the first wafer and at a temperature lower than 600°C. Thereby, the first wafer splits into a usable layer (15), bonded to the second wafer (10), and a remaining layer (16) comprised between the defect layer (6) and the second face of the first wafer. Prior to bonding, the first wafer is subjected to processing steps for obtaining integrated components (7).

Abstract translation: 为了制造半导体材料层（15），对半导体材料的第一晶片（1）进行注入以形成距离第一面一定距离的缺陷层（6）; 通过将存在于第二晶片上的绝缘层与第一晶片的第一面接触来将第一晶片接合到第二晶片（10）。 然后，氢原子（13）通过第二面（3）以能量被引入到第一晶片（1）中，以避免在第一晶片中以及在低于600℃的温度下产生缺陷。 由此，第一晶片分裂成与第二晶片（10）接合的可用层（15），以及包含在缺陷层（6）和第一晶片的第二面之间的剩余层（16）。 在接合之前，第一晶片经受用于获得集成部件（7）的处理步骤。

公开(公告)号：EP0913921B1

公开(公告)日：2006-05-03

申请号：EP97830556.3

申请日：1997-10-29

Applicant: STMicroelectronics S.r.l.

Inventor： Ferrari, Paolo ,  Vigna, Benedetto

IPC: H02N1/00

CPC classification number: H02N1/006