"> A power semiconductor device for
    2.
    发明公开
    A power semiconductor device for "flip-chip" connections 失效
    LeistungshalbleiteranordnungfürFlipchipverbindungen

    公开(公告)号:EP0942635A1

    公开(公告)日:1999-09-15

    申请号:EP98830132.1

    申请日:1998-03-10

    Abstract: An electronic device is formed on a chip (11) of semiconductor material covered by a layer (12) of insulating material. Metal interconnection elements form, on the insulating layer (12), connection pads (13) to which a soldering material (14) is applied. To permit good heat dissipation, the device has a metal plate (30) partially incorporated in the insulating layer (12) and having a surface which is coplanar with the pads (13) and to which soldering material is applied (31).

    Abstract translation: 电子器件形成在由绝缘材料层(12)覆盖的半导体材料的芯片(11)上。 金属互连元件在绝缘层(12)上形成施加有焊料(14)的连接焊盘(13)。 为了允许良好的散热,该装置具有部分地结合在绝缘层(12)中的金属板(30),并且具有与焊盘(13)共面并且被施加焊接材料的表面(31)。

Patent Agency Ranking