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    Process for improving the adhesion between metal and plastic in containment structures for electronic semiconductor devices
    1.
    发明公开
    Process for improving the adhesion between metal and plastic in containment structures for electronic semiconductor devices 审中-公开
    一种用于改善用于电子半导体器件在封装结构金属和塑料之间的粘合过程

    公开(公告)号：EP0987747A1

    公开(公告)日：2000-03-22

    申请号：EP98830540.5

    申请日：1998-09-17

    Applicant: STMicroelectronics S.r.l.

    Inventor： Crema, Paolo ,  Passagrilli, Carlo Alberto

    IPC: H01L21/48

    CPC classification number: H01L21/4821 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: The process comprises the following operations: forming a structure of metal elements with functions of support and electrical connection, these metal elements having a high degree of surface finish; fixing a chip of semiconductor material, containing active parts and contact pads, to an area of a metal element of the structure acting as a support; electrically connecting the contact pads of the chip to predetermined metal elements of the structure acting as terminal conductors; and incorporating in plastic the chip of semiconductor material and part of the structure of metal elements. To improve the adhesion between the structure and the plastic, at least part (32) of the surface of the metal elements is roughened by irradiation with a laser light beam.

    Abstract translation: 该方法包括以下操作：形成具有的支持和电连接，具有高程度的表面光洁度的论文金属元素的功能的金属元素的一个结构; 固定半导体材料的芯片中，在用作支撑结构的金属元素的区域含有活性部分和接触垫，以; 芯片的接触垫电连接到所述结构充当端子导体的预定的金属元素; 并在塑料掺入半导体材料和金属元素的结构的一部分的芯片。 为了改善金属元素的表面的结构和塑料，至少部分（32）之间的粘合力是通过照射激光光束粗糙化。

    A method of removing moulding residues during the manufacture of plastic packages for semiconductor devices
    2.
    发明公开
    A method of removing moulding residues during the manufacture of plastic packages for semiconductor devices 审中-公开
    用于去除毛刺的半导体器件的塑料包装的制造过程中的过程

    公开(公告)号：EP1130637A1

    公开(公告)日：2001-09-05

    申请号：EP00830163.2

    申请日：2000-03-03

    Applicant: STMicroelectronics S.r.l. ,  Arges GmbH

    Inventor： Crema, Paolo ,  Guggenmos, Markus

    IPC: H01L21/48

    CPC classification number: H01L21/4839

    Abstract: A method of removing plastic residues (14) from metal parts (11, 12) of plastic packages for semiconductor devices, that is, dissipators and terminals, provides for the subjection of the surfaces to be treated to a first pulsed laser radiation (27) with a first wavelength selected such that the residues with thicknesses greater than a predetermined value absorb the first radiation (27), the intensity and the period of application of the first radiation being selected such that the residues of greater thickness are attacked by the first radiation, and a second pulsed laser radiation (26) with a second wavelength selected such that the residues with thicknesses less than the predetermined value are at least partially transparent to the radiation and that the metal parts are at least partially absorbent in relation to the second radiation, the intensity and the period of application of the second radiation being selected such that the radiation causes the formation of plasma at the point of impact with the metal part.

    Abstract translation: 甲除去塑料残基（14）从金属部件的塑料封装的半导体器件的方法（11,12），所做的是，消和终端，提供用于待治疗的第一脉冲激光辐射的表面的隶属（27） 具有第一波长选择的搜索DASS死残基与厚度大于预定值吸收第一辐射（27），强度与该第一辐射的应用的周期被选择的搜索DASS模具更大厚度的残基被第一辐射攻击 和第二脉冲激光辐射（26）与第二波长选择的搜索DASS模具与厚度小于所述预定值的残基是至少部分透明的辐射并没有金属部件被至少部分地吸收在相对于所述第二辐射 ，被选择的强度和第二辐射的施加周期搜索做的辐射引起等离子体的在该点的形成 的与金属部的影响。

    Method for removing moulding residues in the fabrication of plastic packages for semiconductor devices
    3.
    发明公开
    Method for removing moulding residues in the fabrication of plastic packages for semiconductor devices 失效
    用于半导体器件的塑料包装的制造中除去毛刺方法

    公开(公告)号：EP0905762A1

    公开(公告)日：1999-03-31

    申请号：EP97830480.6

    申请日：1997-09-30

    Applicant: STMicroelectronics S.r.l.

    Inventor： Crema, Paolo ,  Tiziani, Roberto

    IPC: H01L21/48 ,  B08B7/00

    CPC classification number: B29C37/02 ,  B08B7/0042 ,  H01L21/4839

    Abstract: A method is described for removing residues of plastic (14) from metal parts (11, 12) of plastic packages of semiconductor devices, i.e. heat-sinks and terminals. The surfaces to be treated are subjected to pulsed laser radiation. The wavelength is chosen in such a way that residues of plastic in thin films have good transparency to the radiation and that the metal has a high absorption capacity in respect of the radiation. Moreover, the intensity and duration of application of the radiation are such as to cause the formation of plasma at the point of impact of the radiation with the surface to be treated.

    Abstract translation: 描述了一种方法用于从金属部件的半导体器件，即，包胶的塑料（14）残基（11,12） 的散热器和终端。 待处理的表面进行脉冲激光辐射。 波长被选择在寻求一种方法所做的在薄膜中塑料残基具有良好的透明性的辐射，也做了金属具有关于所述辐射的高吸收能力。 更以上，强度和辐射的应用持续时间进行检查以使在与所述表面的辐射的撞击点等离子体的形成来对待。

    "> A power semiconductor device for
    9.
    发明公开
    A power semiconductor device for "flip-chip" connections 失效
    LeistungshalbleiteranordnungfürFlipchipverbindungen

    公开(公告)号：EP0942635A1

    公开(公告)日：1999-09-15

    申请号：EP98830132.1

    申请日：1998-03-10

    Applicant: STMicroelectronics S.r.l.

    Inventor： Tiziani, Roberto ,  Crema, Paolo ,  Mantovani, Marco

    IPC: H05K1/00 ,  H01L23/367 ,  H01L21/60

    CPC classification number: H01L23/3121 ,  H01L23/36 ,  H01L23/4334 ,  H01L2224/16 ,  H01L2924/19041

    Abstract: An electronic device is formed on a chip (11) of semiconductor material covered by a layer (12) of insulating material. Metal interconnection elements form, on the insulating layer (12), connection pads (13) to which a soldering material (14) is applied. To permit good heat dissipation, the device has a metal plate (30) partially incorporated in the insulating layer (12) and having a surface which is coplanar with the pads (13) and to which soldering material is applied (31).

    Abstract translation: 电子器件形成在由绝缘材料层（12）覆盖的半导体材料的芯片（11）上。 金属互连元件在绝缘层（12）上形成施加有焊料（14）的连接焊盘（13）。 为了允许良好的散热，该装置具有部分地结合在绝缘层（12）中的金属板（30），并且具有与焊盘（13）共面并且被施加焊接材料的表面（31）。

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