公开(公告)号：EP4328967A1

公开(公告)日：2024-02-28

申请号：EP23190203.2

申请日：2023-08-08

Applicant: STMicroelectronics S.r.l.

Inventor： SCALIA, Laura Letizia ,  CAMALLERI, Cateno Marco ,  ZANETTI, Edoardo ,  RUSSO, Alfio

IPC: H01L23/525 ,  H01L29/78 ,  H01L23/62

Abstract: SiC-based MOSFET electronic device (20; 30) comprising: a solid body (48); a gate terminal (24), extending into the solid body (48); a conductive path (36), extending at a first side of the solid body (48), configured to be electrically coupeable to a generator (23) of a biasing voltage (V GS ); a protection element (21) of a solid-state material, coupled to the gate terminal (24) and to the conductive path (36), the protection element (21) forming an electronic connection between the gate terminal (24) and the conductive path (36), and being configured to go from the solid state to a melted or gaseous state, interrupting the electrical connection, in response to a leakage current (i SC ) through the protection element (21) greater than a critical threshold; a buried cavity (69) in the solid body (48) accommodating, at least in part, the protection element (21).