公开(公告)号：EP1296361A1

公开(公告)日：2003-03-26

申请号：EP01830580.5

申请日：2001-09-13

Applicant: STMicroelectronics S.r.l.

Inventor： Ward, Peter ,  Ferla, Giuseppe ,  Lorenti, Simona

IPC: H01L21/20

CPC classification number: H01L21/02667 ,  H01L21/02532 ,  H01L21/2022

Abstract: A process of forming an interface free layer of silicon on a substrate of monocrystalline silicon (105) including the steps of: providing a substrate of monocrystalline silicon (105) having a surface substantially free of oxide, depositing a layer of silicon in-situ doped (120) on the surface of the substrate in an oxygen-free environment and at a temperature below 700°C for obtaining a first monocrystalline portion (120m) of the silicon layer adjacent to the substrate and a second polycrystalline portion (120p) of the silicon layer spaced apart from the substrate, and heating the layer of silicon for growing the monocrystalline portion through part of the polycrystalline portion.

Abstract translation: 具有基本上不含氧化物沉积硅原位掺杂的层的表面上提供的单晶硅衬底（105）：在硅的界面自由层的单晶硅（105）的在基板上形成包括以下步骤的方法 在无氧环境，并在低于700℃的温度下，用于获得所述硅层的第一单晶部分（120米）毗邻的基板和一个第二多晶部分（120P）的基板的表面上（120） 硅层从衬底隔开，以及用于通过所述多晶部分的一部分生长单晶部分加热硅的层。