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Patent Agency Ranking
公开(公告)号：EP1764597B1
公开(公告)日：2011-03-23
申请号：EP05425648.2
申请日：2005-09-16
Applicant: STMicroelectronics Srl
Inventor： Combi, Chantal , Petroni, Simona , Pomarico, Angela , Baldo, Lorenzo
CPC classification number: G01L9/0025
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2.发明授权Analog data-input device provided with a microelectromechanical pressure sensor 有权设置有微 - 电 - 机械压力传感器的模拟数据输入装置
公开(公告)号：EP1707931B1
公开(公告)日：2013-03-27
申请号：EP05425183.0
申请日：2005-03-31
Applicant: STMicroelectronics Srl
Inventor： Baldo, Lorenzo , Combi, Chantal , Sassolini, Simone , Del Sarto, Marco
IPC: G01L9/00 , G01L1/20 , H01H13/785 , G06F3/041 , G01L19/14
CPC classification number: G06F3/041 , G01L9/0045 , G01L9/0054 , G01L19/141 , G01L19/147 , G06F3/0338 , H01H13/785 , H01H2201/02 , H01H2201/036 , H01H2221/012 , H01H2239/01 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/16195 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
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3.发明授权Assembly of an integrated device enabling a facilitated fluidic connection to regions of the device 有权与该装置的区域的简化流体连接的装置的Intetriergen排列
公开(公告)号：EP1870687B1
公开(公告)日：2012-09-12
申请号：EP06425430.3
申请日：2006-06-23
Applicant: STMicroelectronics Srl
Inventor： Ziglioli, Federico , Combi, Chantal , Baldo, Lorenzo , Riva, Caterina , Shaw, Mark Andrew
CPC classification number: G01L19/0038
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4.发明授权Analog input device with integrated pressure sensor and electronic apparatus equipped with said input device. 有权具有集成的压力传感器和配备有这种输入装置的电子设备的模拟输入装置。
公开(公告)号：EP1762925B1
公开(公告)日：2016-12-21
申请号：EP05425633.4
申请日：2005-09-09
Applicant: STMicroelectronics Srl
Inventor： Baldo, Lorenzo , Combi, Chantal , Faralli, Dino
CPC classification number: G01L5/223 , G06F3/0338 , Y10T29/49105 , Y10T29/49169
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5.发明授权Process for manufacturing a pressure-monitoring device provided with a triaxial piezoresistive accelerometer 有权一种制备Drucküberwachungsvorichtung，其设置有压阻三轴加速度计过程
公开(公告)号：EP2096448B1
公开(公告)日：2016-01-20
申请号：EP09161586.4
申请日：2005-01-25
Applicant: STMicroelectronics Srl
Inventor： Combi, Chantal , Baldo, Lorenzo , Faralli, Dino , Villa, Flavio Francesco
CPC classification number: G01P15/123 , G01P15/0802 , G01P15/18 , G01P2015/084
Abstract: A manufacturing process of a semiconductor piezoresistive accelerometer (35) includes the steps of: providing a wafer (11) of semiconductor material; providing a membrane (23) in the wafer (11) over a cavity (22); rigidly coupling an inertial mass (25) to the membrane (23); and providing, in the wafer (11), piezoresistive transduction elements (24), that are sensitive to strains of the membrane (23) and generate corresponding electrical signals. The step of coupling is carried out by forming the inertial mass (25) on top of a surface of the membrane (23) opposite to the cavity (22). The accelerometer (35) is advantageously used in a device for monitoring the pressure (30) of a tyre of a vehicle. The cavity may be formed as a buried cavity. The mass may be formed by silk-screen printing of a metal paste.
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