Abstract:
Microelectronic packages include a first microelectronic substrate, a second microelectronic substrate that is oriented at an acute angle relative to the first microelectronic substrate, and first solder bumps between the first and second microelectronic substrates, adjacent an edge of the second microelectronic substrate, that connect the second microelectronic substrate to the first microelectronic substrate and that are confined to within the edge of the second microelectronic substrate. The edge of the second microelectronic substrate is adjacent the vertex of the acute angle. A third microelectronic substrate also may be provided on the first microelectronic substrate that laterally overlaps the second microelectronic substrate. Second solder bumps connect the third microelectronic substrate to the first microelectronic substrate. The second and third microelectronic substrates may be oriented parallel to one another at the acute angle relative to the first microelectronic substrate. Alternatively, second solder bumps are adjacent a first edge of the third microelectronic substrate and opposite a second edge of the third microelectronic substrate, wherein the second edge of the third microelectronic substrate is adjacent the vertex and wherein the first edge of the third microelectronic substrate is opposite the vertex.
Abstract:
Solder bumps are fabricated by plating a first solder layer on an underbump metallurgy, plating a second solder layer having higher melting point than the first solder layer on the first solder layer and plating a third solder layer having lower melting point than the second solder layer on the second solder layer. The structure then is heated to below the melting point of the second solder layer but above the melting point of the first solder layer and the third solder layer, to alloy at least some of the first solder layer with at least some of the underbump metallurgy and to round the third solder layer. Accordingly, a trilayer solder bump may be fabricated wherein the first and third layers melt at lower temperatures than the second solder layer, to thereby round the outer surface of the solder bump and alloy the base of the solder bump to the underbump metallurgy, while allowing the structure of the intermediate layer to be preserved. Solder bump fabrication as described above may be particularly useful with lead-tin solder wherein the first solder layer is eutectic lead-tin solder, the second solder layer is lead-tin solder having higher lead content than eutectic lead-tin solder and the third solder layer is eutectic lead-tin solder. In yet other embodiments, the thickness and/or composition of the outer underbump metallurgy layer and/or of the first solder layer may be selected so that upon heating, sufficient tin from the first solder layer is alloyed with at least some of the outer underbump metallurgy layer, such that the first solder layer is converted to a fourth solder layer having the same lead content as the second solder layer. Bilayer solder bumps thereby may be provided.
Abstract:
MICROELETRONIC PACKAGES INCLUDE A FIRST MICROELECTRONIC SUBSTRATE, A SECOND MICROELECTRONIC SUBSTRATE THAT IS ORIENTED AT AN ACUTE ANGLE RELATIVE TO THE FIRST AND SECOND MICROELECTRONIC SUBSTRATE AND FIRST SOLDER BUMPS BETWEEN THE FIRST AND SECOND MICROELECTRONIC SUBSTRATES, ADJACENT AN EDGE OF THE SECOND MICROELECTRONIC SUBSTRATE, THAT CONNECT THE SECOND MICROELECTRONIC SUBSTRATE TO THE FIRST MICROELECTRONIC SUBSTRATE AND THAT ARE CONFINED TO WITHIN THE EDGE OF THE SECOND MICROELECTRONIC SUBSTRATE.. THE EDGE OF THE SECOND MICROELECTRONIC SUBSTRATE IS ADJACENT THE VERTEX OF THE ACUTE ANGLE.@A THIRD MICROELECTRONIC SUBSTRATE ALSO MAY BE PROVIDED ON THE FIRST MICROELECTRONIC SUBSTRATE THAT LATERALLY OVERLAPS THE SECOND MICROELECTRONIC SUBSTRATE. SECOND SOLDER BUMPS CONNECT THE THIRD MICROELECTRONIC SUBSTRATE TO THE FIRST MICROELECTRONIC SUBSTRATE. THE SECOND AND THIRD MICROELECTRONIC SUBSTRATES MAY BE ORIENTED PARALLEL TO ONE ANOTHER AT THE ACUTE ANGLE RELATIVE TO THE FIRST MICROELECTRONIC SUBSTRATE. ALTERNATIVELY, SECOND SOLDER BUMPS ARE ADJACENT A SECOND EDGE OF THE THIRD MICROELECTRONIC SUBSTRATE AND OPPOSITE A SECOND EDGE OF THE THIRD MICROELECTRONIC SUBSTRATE IS ADJACENT THE VERTEX AND WHEREIN THE FIRST EDGE OF THE THIRD MICROELECTRONIC SUBSTRATE IS OPPOSITE THE VERTEX.
Abstract:
A first substrate is attached to a second substrate by providing solder structures that include a first portion adjacent the second substrate that has a first melting point, and a second portion adjacent the first substrate that has a second melting point that is lower than the first melting point. The solder structures then are heated to a first temperature that is at or above the second melting point but below the first melting point, to melt the second portions. Simultaneous with the heating of the solder structures to the first temperature, the first substrate is attached to the second substrate while the second portions are melted. Finally, the solder structures are heated to a second temperature that is above the first temperature, to alloy at least some of the first portions and the second portions. Accordingly, low temperature joining and/or positioning of the first substrate relative to the second substrate may be performed, followed by conversion of at least part of the solder structures to a higher melting point alloy, thereby allowing a reduced creep rate.
Abstract:
A liquid prime mover can be used to position a component on a substrate. For example, a liquid material can be provided on the substrate adjacent the component such that the component has a first position relative to the substrate. A property of the liquid material can then be changed to move the component from the first position relative to the substrate to a second position relative to the substrate. Related structures are also discussed.
Abstract:
Microelectronic packages include a first microelectronic substrate, a second microelectronic substrate that is oriented at an acute angle relative to the first microelectronic substrate, and first solder bumps between the first and second microelectronic substrates, adjacent an edge of the second microelectronic substrate, that connect the second microelectronic substrate to the first microelectronic substrate and that are confined to within the edge of the second microelectronic substrate. The edge of the second microelectronic substrate is adjacent the vertex of the acute angle. A third microelectronic substrate also may be provided on the first microelectronic substrate that laterally overlaps the second microelectronic substrate. Second solder bumps connect the third microelectronic substrate to the first microelectronic substrate. The second and third microelectronic substrates may be oriented parallel to one another at the acute angle relative to the first microelectronic substrate. Alternatively, second solder bumps are adjacent a first edge of the third microelectronic substrate and opposite a second edge of the third microelectronic substrate, wherein the second edge of the third microelectronic substrate is adjacent the vertex and wherein the first edge of the third microelectronic substrate is opposite the vertex.
Abstract:
A first substrate is attached to a second substrate by providing solder structures that include a first portion adjacent the second substrate that has a first melting point, and a second portion adjacent the first substrate that has a second melting point that is lower than the first melting point. The solder structures then are heated to a first temperature that is at or above the second melting point but below the first melting point, to melt the second portions. Simultaneous with the heating of the solder structures to the first temperature, the first substrate is attached to the second substrate while the second portions are melted. Finally, the solder structures are heated to a second temperature that is above the first temperature, to alloy at least some of the first portions and the second portions. Accordingly, low temperature joining and/or positioning of the first substrate relative to the second substrate may be performed, followed by conversion of at least part of the solder structures to a higher melting point alloy, thereby allowing a reduced creep rate.
Abstract:
Microelectronic packages include a first microelectronic substrate, a second microelectronic substrate that is oriented at an acute angle relative to the first microelectronic substrate, and first solder bumps between the first and second microelectronic substrates, adjacent an edge of the second microelectronic substrate, that connect the second microelectronic substrate to the first microelectronic substrate and that are confined to within the edge of the second microelectronic substrate. The edge of the second microelectronic substrate is adjacent the vertex of the acute angle. A third microelectronic substrate also may be provided on the first microelectronic substrate that laterally overlaps the second microelectronic substrate. Second solder bumps connect the third microelectronic substrate to the first microelectronic substrate. The second and third microelectronic substrates may be oriented parallel to one another at the acute angle relative to the first microelectronic substrate. Alternatively, second solder bumps are adjacent a first edge of the third microelectronic substrate and opposite a second edge of the third microelectronic substrate, wherein the second edge of the third microelectronic substrate is adjacent the vertex and wherein the first edge of the third microelectronic substrate is opposite the vertex.
Abstract:
A second substrate is positioned relative to a first substrate having phase-changeable bumps, such as solder bumps, between them, wherein the second substrate has a first face adjacent the first substrate, a second face remote from the first substrate, and at least one edge wall between the first and second faces. The phase-changeable bumps are liquefied to establish an equilibrium position of the first and second substrates relative to one another. At least a portion of the second face is pushed away from the equilibrium position towards the first substrate, to a new position, without applying external force to the first face other than spring forces of the phase-changeable bumps that are liquefied, and without applying external force to any edge wall. Thus, only spring forces of the phase-changeable bumps that are liquefied oppose the pushing. The phase-changeable bumps that are liquefied then are solidified, to maintain the new position.