公开(公告)号：DE69919442D1

公开(公告)日：2004-09-23

申请号：DE69919442

申请日：1999-04-28

Applicant: XEROX CORP

Inventor： HOFSTETTER DANIEL ,  DUNNROWICZ CLARENCE J ,  SUN DECAI ,  BRINGANS ROSS D ,  KNEISSL MICHAEL A

IPC: H01S5/00 ,  H01S5/02 ,  H01S5/042 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40

Abstract: A side by side red/IR laser structure (160,156) is flip chip bonded by solder balls (402,404) to a blue laser structure (252) to form a red/blue/IR hybrid integrated laser structure (400).

公开(公告)号：DE69919442T2

公开(公告)日：2005-01-20

申请号：DE69919442

申请日：1999-04-28

Applicant: XEROX CORP

Inventor： HOFSTETTER DANIEL ,  DUNNROWICZ CLARENCE J ,  SUN DECAI ,  BRINGANS ROSS D ,  KNEISSL MICHAEL A

IPC: H01S5/00 ,  H01S5/02 ,  H01S5/042 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40

Abstract: A side by side red/IR laser structure (160,156) is flip chip bonded by solder balls (402,404) to a blue laser structure (252) to form a red/blue/IR hybrid integrated laser structure (400).

公开(公告)号：JP2010183120A

公开(公告)日：2010-08-19

申请号：JP2010120214

申请日：2010-05-26

Applicant: Xerox Corp ,  ゼロックス コーポレイションXerox Corporation

Inventor： HOFSTETTER DANIEL ,  DUNNROWICZ CLARENCE J ,  SUN DECAI ,  BRINGANS ROSS D ,  KNEISSL MICHAEL A

IPC: H01S5/00 ,  H01S5/022 ,  H01S5/02 ,  H01S5/042 ,  H01S5/22 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40

CPC classification number: B82Y20/00 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/0425 ,  H01S5/343 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/4031 ,  H01S5/4043 ,  H01S5/4087

Abstract: PROBLEM TO BE SOLVED: To provide a monolithic multiple laser structure which has the capability of emitting a multiple wavelength laser beam of close intervals in a wide wavelength spectrum range from infrared to red and blue wavelengths.
SOLUTION: A red/infrared parallel type laser structure 100 is bonded to a blue laser structure 200 with solder bumps 402, 404 by flip-chip bonding to form a red/blue/infrared integrated laser structure 400 integrated by a hybrid method. The method allows a laser array structure having laser elements of different wavelengths to be manufactured, even in a semiconductor materials which are not suitable for a manufacturing method based on etching and regrowth.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种单片多重激光器结构，其具有在从红外到红色和蓝色波长的宽波长光谱范围内发射紧密间隔的多波长激光束的能力。 解决方案：红/红外并联型激光器结构100通过倒装芯片接合结合到具有焊料凸块402,404的蓝色激光器结构200，以形成通过混合方法集成的红/蓝/红外一体化激光器结构400 。 该方法允许制造具有不同波长的激光元件的激光阵列结构，即使在不适合基于蚀刻和再生长的制造方法的半导体材料中。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JPH11340584A

公开(公告)日：1999-12-10

申请号：JP12520299

申请日：1999-04-30

Applicant: XEROX CORP

Inventor： FLOYD PHILIP D ,  HOFSTETTER DANIEL

IPC: H01L33/00 ,  H01S5/00 ,  H01S5/02 ,  H01S5/183 ,  H01S5/22 ,  H01S5/323 ,  H01S5/343 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a structure of a monolithic edge light-emitting laser which emits light ranging in wavelength from 390 to 430 nm (blue range) and is capable of addressing independently. SOLUTION: In a laser structure 200 with exclusively of gallium nitride as the principal body, a laser heterostructure is formed on the terminal 216 of an n-GaN layer 210. Laser is emitted from a quantum well active layer. The n-GaN layer 210 is epitaxially grown laterally and is a region with few crystal defects. This allows a blue laser of high efficiency to be emitted.

公开(公告)号：JPH11340587A

公开(公告)日：1999-12-10

申请号：JP12519499

申请日：1999-04-30

Applicant: XEROX CORP

Inventor： HOFSTETTER DANIEL ,  DUNNROWICZ CLARENCE J ,  SUN DECAI ,  BRINGANS ROSS D ,  KNEISSL MICHAEL A

IPC: H01S5/00 ,  H01S5/02 ,  H01S5/042 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a monolithic multiple laser structure which includes the capability of emitting a multiple wavelength laser beam, having a wide range of infrared to red and blue for wavelength spectrum and close intervals. SOLUTION: A red/infrared parallel type laser structure 100 is bonded to a blue laser structure 200 with solder bumps 402 and 404 by a flip-chip method, to form a red/blue/infrared integrated laser structure 400 integrated by a hybrid method. This method allows a laser array structure having laser elements of different wavelengths to be manufactured, even in semiconductor materials which are not compatible with a manufacturing method by etching and regrowth.

公开(公告)号：JPH11340582A

公开(公告)日：1999-12-10

申请号：JP12519899

申请日：1999-04-30

Applicant: XEROX CORP

Inventor： FLOYD PHILIP D ,  HOFSTETTER DANIEL

IPC: H01L33/00 ,  H01S5/00 ,  H01S5/02 ,  H01S5/183 ,  H01S5/22 ,  H01S5/323 ,  H01S5/343 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a structure of a monolithic vertical cavity surface-emitting laser which emits spectral light of wavelength in the range of 390 to 430 nm (blue range) and is independently addressable. SOLUTION: In a laser structure 200 being composed almost exclusively of gallium nitride, a laser heterostructure 230 is formed on a terminal 216 of an n-GaN layer 210. Laser is emitted from a quantum well active layer 222. The n-GaN layer 210 is grown epitaxially laterally on a DBR 206 and since this is a region with few crystal defects, a blue spectral vertical cavity surface H emitting laser can be emitted with high efficiency to be emitted.