Abstract:
An out-of-plane micro-structure which can be used for on-chip integration of high-Q inductors and transformers places the magnetic field direction parallel to the substrate (14) plane without requiring high aspect ratio processing. The photolithographically patterned coil structure includes an elastic member (61 a) having an intrinsic stress profile. The intrinsic stress profile biases a free portion (11) away from the substrate (14) forming a loop winding (142). An anchor portion (12) remains fixed to the substrate (14). The free portion end becomes a second anchor portion (61 c) which may be connected to the substrate (14) via soldering or plating. A series of individual coil structures (140) can be joined via their anchor portions to form inductors and transformers.
Abstract:
An out-of-plane micro-structure which can be used for on-chip integration of high-Q inductors and transformers places the magnetic field direction parallel to the substrate (14) plane without requiring high aspect ratio processing. The photolithographically patterned coil structure includes an elastic member (61 a) having an intrinsic stress profile. The intrinsic stress profile biases a free portion (11) away from the substrate (14) forming a loop winding (142). An anchor portion (12) remains fixed to the substrate (14). The free portion end becomes a second anchor portion (61 c) which may be connected to the substrate (14) via soldering or plating. A series of individual coil structures (140) can be joined via their anchor portions to form inductors and transformers.
Abstract:
A side by side red/IR laser structure (160,156) is flip chip bonded by solder balls (402,404) to a blue laser structure (252) to form a red/blue/IR hybrid integrated laser structure (400).
Abstract:
A micro-optical-electrical-mechanical laser scanner is configured from a silicon-on-insulator substrate having a silicon substrate layer, a buried oxide layer, and a single crystal silicon device layer. A first device layer portion having a micro-mirror (34) fabricated therefrom. A laser (36) is connected to a second device layer portion, and a hinge (24) connects the first device layer portion and the second device layer portion. The hinge is formed with a bimorph material, wherein the bimorph material creates built-in stresses in the hinge. The bimorph hinge moves the released micro-mirror out of the horizontal plane to a position for either directly or indirectly reflecting laser light emitted from the laser.
Abstract:
A side by side red/IR laser structure (160,156) is flip chip bonded by solder balls (402,404) to a blue laser structure (252) to form a red/blue/IR hybrid integrated laser structure (400).
Abstract:
Provided is a ribbon structure which may be used as part of a micro-assembly including a micro-device formed on or in a device layer of a single crystal silicon substrate. The ribbon structure is also formed in the device layer, where the ribbon structure is thinned to a thickness less than the thickness of the micro-device. The ribbon structure has an electrical conductive material deposited on its surface. When implemented as part of the micro-assembly, a first end of the micro-device and a first end of a ribbon structure are interconnected, wherein the ribbon structure and out-of-plane device are formed as a single piece.
Abstract:
The present invention relates to a vertical cavity surface emitting laser with an accurately defined and controlled aperture (134) which directs the current path within the laser. Specifically, the oxide regions (106) surrounding the aperture are formed by a pre-oxidation layer disordering process which controls the regions within which oxidation can occur. The present invention allows for the manufacture of highly compact lasers with reproducible optical and electrical characteristics.
Abstract:
The present invention provides an independently addressable, high density, edge emitting laser array structure (100) formed by a lateral wet oxidation process. The aperture (180,182,184,186) of the laser structure is formed by selective layer intermixing and lateral wet oxidation from adjacent grooves (168,170,172,174,176) etched in the laser structure.