Abstract:
A small form factor pluggable optoelectronic module and pluggable equipment including an elongated optoelectronic module housing with first and second ends. The housing includes a cavity formed in the first end to nestingly receive one of a plurality of different optoelectronic modules in a horizontal-axis pluggable configuration. An electrical connector, which is one of a card edge connector and a multi-pin connector, is mounted in the housing adjacent the second end. An adapter is mounted in the housing to pluggably receive the one of the plurality of different optoelectronic modules and to electrically couple the one of the plurality of different optoelectronic modules to the electrical connector in a selected configuration.
Abstract:
An optical adjuster (16) includes a constraint joint (256) having a contact (258A) and a contact engager (258B). The contact (258A) includes a contact region (268) that is rounded, and the contact engager (258B) includes a first wall (270A), a second wall (270B), and a third wall (270C). Further, the walls (270A) (270B) (270C) are arranged so that the contact region (268) simultaneously contacts only one location on each wall (270A) (270B) (270C) to create a true three point contact that provides three degrees of constraint. One or more of the walls (270A), (270B), (270C) includes a contact pad (274) that engages the contact (258A). Each contact pad (274) can be made of a hard, relatively low friction material with a low friction surface (273).
Abstract:
A monolithically integrated electroabsorption modulated laser having a ridge waveguide structure, has lateral ion implantation. The integrated device has a laser section and a modulator section. The modulator section has ion implanted regions adjacent to the waveguide ridge. The implanted regions penetrate through the top cladding layer to reduce capacitance within the intrinsic active core of the reverse biased modulator and allow a shallow etched ridge waveguide structure to be used for the modulator. The device provides good optical coupling, efficient manufacturing, and good high power performance.
Abstract:
A semiconductor laser structure having confinement layers to confine electrons to an active region (quantum wells) and having separate antimonide-based cladding layers to provide additional electron confinement and photon confinement is suited to high temperature operation. The structure is suitable for lasing across telecommunications wavelengths from 980 nm to 1.55 µm (microns) . The cladding layer uses AlAsSb which can be lattice-matched to InP and can be used to achieve large conduction band offsets. It is very useful for coolerless (without thermo-electric cooler) operation.
Abstract:
An optoelectric subassembly including a receptacle assembly with an optoelectric device mounted therein to define a light axis. The receptacle assembly includes an optical fiber mounting structure defining an opening with an end of an optical fiber received therein. The mounting structure and opening are designed to position the received optical fiber with an end facet substantially perpendicular to the light axis. A first lens is mounted in the receptacle assembly adjacent the optoelectronic device in the light axis and a ball lens is mounted in the receptacle assembly and positioned in the light axis. The ball lens is mounted so as to be in abutting engagement with the facet of an optical fiber inserted into the opening. By forming the ball lens with a diameter equal to the diameter of a mounting ferrule on the end of the fiber and also equal to the diameter of the ferrule receiving opening, the ball lens is self-aligning.
Abstract:
A method of actively aligning an optic fibre with an optic element defined in an optic chip supported on a carrier, such as an aluminium nitride carrier including slots to control heat transfer, wherein the active alignment process is carried out with the fibre held in molten glass on the carrier, and the glass is solidified at the end of the active alignment process to fix the fibre in the desired alignment with respect to the optic element.
Abstract:
A power monitoring arrangement for semiconductor light emitting devices used in optoelectronic packages includes a mounting structure (11), a light emitting device (10), and a monitor photodetector (16). The mounting structure has a mounting surface with the light emitting device and the monitor photodetector positioned thereon. The light emitting device provides emitted light at a monitoring output (13) and an active output (34). The monitor photodetector has a light sensitive region (18) and is positioned on the mounting surface of the mounting structure proximate the monitoring output of the light emitting device. A hemisphere (19) of material is formed to include at least the light sensitive region of the monitor photodetector and the monitoring output of the light emitting device. An outer surface of the hemisphere operates as a reflecting surface to reflect light from the monitoring output of the light emitting device to the light sensitive region of the monitor photodetector.
Abstract:
An optical transceiver module is disclosed with improved digital diagnostic integrated circuits. The optical transceiver includes an electrical-to-optical transmitter and an optical-to-electrical receiver each coupled to a digital diagnostic integrated circuit. A bi-directional 2-wire control interface is provided and a microcontroller couples the digital diagnostic integrated circuit to the control interface. Various methods are described for using the microcontroller to incorporate changes or diagnostic functions in the digital diagnostic integrated circuit.
Abstract:
An Optical communications apparatus, comprising: (a) an optical integrated device comprising an input, one or more integrated optical component(s) and an output, arranged such that light received by the input is propagated by the optical component(s) and exits the device as an output light beam; (b) a light beam diverter arranged to divert a sample portion only of the power of the output light beam; (c) a light detector arranged to detect the sample portion of the output light beam; and (d) a polariser located between the light beam diverter and the light detector and/or between the output of the optical integrated device and the light beam diverter, the polariser being arranged such that if light of a predetermined polarisation is received by the optical integrated device, the polariser propagates light of that polarisation only, thereby substantially to prevent light other than of the predetermined polarisation being detected by the light detector.
Abstract:
A self-aligned laser structure with an integral active and guiding layer is disclosed. It is comprised of a continuous active region and a current blocking region forming a lateral waveguide. The blocking region has an index of refraction n1 and a continuous guiding layer has an index of refraction n2, wherein n2 is greater than n1. The blocking region has a real refractive index step to form a transverse optical mode.