GATED ELECTRON EMISSION DEVICE AND METHOD OF FABRICATION THEREOF
    91.
    发明公开
    GATED ELECTRON EMISSION DEVICE AND METHOD OF FABRICATION THEREOF 失效
    GRID控制的电子发射装置及其制造方法

    公开(公告)号:EP1018131A1

    公开(公告)日:2000-07-12

    申请号:EP97926809.1

    申请日:1997-06-05

    CPC classification number: H01J9/025 H01J2329/00

    Abstract: A gated electron-emitter is fabricated by a process in which particles (26) are deposited over an insulating layer (24). Gate material is provided over the insulating layer in the space between the particles after which the particles and any overlying material are removed. The remaining gate material forms a gate layer (28A or 48A) through which gate openings (30 or 50) extend at the locations of the removed particles. When the gate material deposition is performed so that part of the gate material extends into the spaces below the particles, the gate openings are beveled. The insulating layer is etched through the gate openings to form dielectric openings (32 or 52). Electron-emissive elements (36A or 56A) are formed in the dielectric openings. This typically involves introducing emitter material through the gate openings into the dielectric openings and using a lift-off layer (34), or an electrochemical technique, to remove excess emitter material.

    MULTI-LEVEL CONDUCTIVE BLACK MATRIX
    92.
    发明公开
    MULTI-LEVEL CONDUCTIVE BLACK MATRIX 失效
    黑矩阵组织的多级

    公开(公告)号:EP1016115A1

    公开(公告)日:2000-07-05

    申请号:EP98913153.7

    申请日:1998-03-24

    Inventor: DRUMM, Paul, M.

    CPC classification number: H01J9/242 H01J29/085 H01J2201/025 H01J2329/00

    Abstract: A multi-level conductive matrix structure for separating rows (106, 108) and columns (110-122) of sub-pixels on a faceplate (104) of a flat panel display device is disclosed. The matrix structure has a first plurality of parallel spaced apart conductive ridges having a height, a second plurality of parallel spaced apart conductive ridges having a height higher than the height of the first plurality of conductive ridges, and the height of second conductive ridges decreases to the height of first conductive ridges at intersections of the first and second conductive ridges.

    FIELD EMITTER FABRICATION USING OPEN CIRCUIT ELECTROCHEMICAL LIFT OFF
    93.
    发明公开
    FIELD EMITTER FABRICATION USING OPEN CIRCUIT ELECTROCHEMICAL LIFT OFF 失效
    场发射生产电化学翘起伴随开路

    公开(公告)号:EP0998597A1

    公开(公告)日:2000-05-10

    申请号:EP98906269.0

    申请日:1998-02-10

    CPC classification number: H01J9/025

    Abstract: A method for forming a field emitter structure in which a cavity (208) is formed into an insulating layer (206) overlaying a first electrically conductive layer (202). A second electrically conductive layer (210) with an opening (212) is formed above the cavity. Electron emissive material (214) is deposited directly onto the second electrically conductive layer without first depositing an underlying lift-off layer. Electron emissive material covers the opening in the second electrically conductive layer and forms an electron emissive element (216) within the cavity. A first potential is imparted to the electron emissive element. A second open circuit potential is imparted to the closure layer of electron emissive material. The field emitter structure is exposed to an electrochemical etchant (220) wherein the electrochemical etchant etches electron emissive material which is biased at open circuit potential. Electron emissive material is removed from above the second electrically conductive layer without etching the electron emissive element.

    GATE ELECTRODE FORMATION METHOD
    94.
    发明公开
    GATE ELECTRODE FORMATION METHOD 失效
    一种用于生产栅电极的

    公开(公告)号:EP0995213A1

    公开(公告)日:2000-04-26

    申请号:EP98922233.6

    申请日:1998-05-12

    CPC classification number: H01J9/025 H01J2329/00

    Abstract: A method for forming a gate electrode comprises depositing a gate metal (604) over an insulating substrate (602) and etching openings in areas of the gate layer which are exposed through a hard mask. The layer of the gate metal (604) is deposited to a thickness approximately the same as the thickness desired for the gate electrode. Next, polymer particles (700) are deposited over the layer of gate metal. A hard mask layer (800) is then deposited over the polymer particles and the layer of gate metal. Then the polymer particles (700) and portions of the hard mask (800) which overlie the polymer particles are removed such that first regions of the gate metal (604) are exposed while second regions remain covered by the hard mask. After openings have been formed completely through the gate metal in the first regions, the remaining portions of the hard mask are removed.

    A METHOD FOR CREATING A PLANAR ALUMINUM LAYER IN A FLAT PANEL DISPLAY STRUCTURE
    95.
    发明公开
    A METHOD FOR CREATING A PLANAR ALUMINUM LAYER IN A FLAT PANEL DISPLAY STRUCTURE 失效
    VERFAHRN用于制造平面铝层在平板

    公开(公告)号:EP0971799A1

    公开(公告)日:2000-01-19

    申请号:EP98903607.4

    申请日:1998-01-21

    Inventor: DRUMM, Paul, M.

    CPC classification number: H01J29/327 H01J29/28

    Abstract: On a flat panel display structure, having a raised black matrix (200) defining wells within the matrix, is deposited a non-conformal, planar layer of acrylic-containing aluminizing lacquer (208) over a layer of phosphors (206) residing within the wells of the black matrix. A planar layer of catalyst material (210) is deposited over the layer of lacquer (208). A planar aluminum layer (212) is subsequently deposited over the catalytic layer (210). Finally, a baking process is conducted at a temperature such that the lacquer layer (208) and the catalyst layer (210) are cleanly and completely evaporated. This temperature is relatively low so as not to adversely affect the reflectivity of the aluminum layer (212), damage the black matrix material (200), or induce oxidation of phosphors. A substantially planar and mirror-like aluminum surface is achieved.

    A METHOD AND SYSTEM FOR INFRARED DETECTION OF ELECTRICAL SHORT DEFECTS
    99.
    发明公开
    A METHOD AND SYSTEM FOR INFRARED DETECTION OF ELECTRICAL SHORT DEFECTS 审中-公开
    方法和系统红外探测电路短路缺陷

    公开(公告)号:EP1405091A2

    公开(公告)日:2004-04-07

    申请号:EP01990733.6

    申请日:2001-11-28

    CPC classification number: G09G3/006 G01R31/308

    Abstract: A method and system (200) for detecting electrical short circuit defects in a plate structure of a flat panel display (205), for example, a field emission display (FED). In one embodiment, the process first applies a stimulation (204) to the electrical conductors of the plate structure. Next, the process creates an infra-red thermal mapping (210) of a cathode region the FED. For example, an infra-red array may be used to snap a picture of the cathode of the FED.Then , the process analyzes (100) the infra-red thermal mapping to determine a region of the FED which contains the electrical short circuit defect (215). Another embodiment localizes the defect to one sub-pixel by performing an infra-red mapping (212) of the region which the previous IR mapping process determined to contain the electrical short circuit defect (215). Then, the process analyzes (100) this infra-red mapping to determine a sub-pixel of the FED which contains the electrical short circuit defect (215).

    PROCEDURES AND APPARATUS FOR TURNING-ON AND TURNING-OFF ELEMENTS WITHIN A FED DEVICE
    100.
    发明公开
    PROCEDURES AND APPARATUS FOR TURNING-ON AND TURNING-OFF ELEMENTS WITHIN A FED DEVICE 审中-公开
    程序和设备元素在美联储组分车削

    公开(公告)号:EP1364361A2

    公开(公告)日:2003-11-26

    申请号:EP02725025.7

    申请日:2002-02-26

    CPC classification number: H01J9/44 G09G3/22 G09G2310/066 H01J2209/0223

    Abstract: A circuit and method for turning-on and turning-off elements of an field emission display device to protect against emitter electrode(60) and gate electrode(50) degradation. The circuit(910) includes control logic(916) having a sequencer which in one embodiment can be realized using a state machine. Upon power-on, the control logic sends an enable signal to a high voltage power supply (912) that supplies voltage to the anode electrode (914). At this time a low voltage power supply (918) and driving circuitry (920)are disabled. Upon receiving a confirmation signal from the high voltage power supply, the control logic enables the low voltage power supply which supplies voltage to the driving circuitry (920). Upon receiving a confirmation signal from the low voltage power supply (918), or optionally after expiration of a predetermined time period, the control logic (916) then enables the driving circuitry (920) which drives the gate electrodes (50) and the emitter electrodes (60) which make up the rows and columns of the FED device. Upon power down, the control logic (916) first disables the low voltage power supply (918), then the high voltage power supply (912).

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