Abstract:
In various embodiments, superconducting wires feature assemblies of clad composite filaments and/or stabilized composite filaments embedded within a wire matrix. The wires may include one or more stabilizing elements for improved mechanical properties.
Abstract:
In various embodiments, eroded sputtering targets are partially refurbished by spray- depositing particles of target material to at least partially fill certain regions (e.g., regions of deepest erosion) without spray-deposition within other eroded regions (e.g., regions of less erosion). The partially refurbished sputtering targets may be sputtered after the partial refurbishment without substantive changes in sputtering properties (e.g., sputtering rate) and/or properties of the sputtered films.
Abstract:
In various embodiments, used sputtering targets are refurbished at least in part by maintaining a large obliquity angle (300) between the spray-deposition gun (320) and the depressed surface contour (330) of the target during spray deposition of the target material.
Abstract:
Methods and apparatus for rolling metal sheet or plate (3) are provided. The method comprises the step of feeding the metal plate or sheet (3) into a rolling mill (1, 2) at an angle. The apparatus comprises a rolling mill having a tilted feed table (4), or an apron upon which a transfer table and tilted feed table can rest. Through- thickness gradient and shear texture can be improved using the methods and apparatus of the invention.
Abstract:
The invention relates to a sputtering target which has a fine uniform equiaxed grain structure of less than 44 microns, no preferred texture orientation as measured by electron back scattered diffraction ("EBSD") and that displays no grain size banding or texture banding throughout the body of the target. The invention relates a sputtering target with a lenticular or flattened grain structure, no preferred texture orientation as measured by EBSD and that displays no grain size or texture banding throughout the body of the target and where the target has a layered structure incorporating a layer of the sputtering material and at least one additional layer at the backing plate interface, said layer has a coefficient of thermal expansion ("CTE") value between the CTE of the backing plate and the CTE of the layer of sputtering material. The invention also relates to thin films and their use of using the sputtering target and other applications, such as coatings, solar devices, semiconductor devices etc. The invention further relates to a process to repair or rejuvenate a sputtering target.
Abstract:
The present invention is directed to a process for joining tantalum clad steel structures. The process broadly comprises: a) providing a first tantalum clad section, said first tantalum clad section comprising a tantalum layer over a steel layer, with a bonding layer optionally therebetween, with a portion of said steel layer in an edge region not being covered by said tantalum layer or said bonding layer, b) providing a second tantalum clad section, said second tantalum clad section comprising a tantalum layer over a steel layer, with a bonding layer optionally therebetween, with a portion of said steel layer in an edge region not being covered by said tantalum layer or said bonding layer, c) locating said steel edge regions adjacent each other, d) welding the steel edge regions together, e) cold spraying a tantalum powder onto the welded edge regions and over the tantalum layers adjacent said edge regions thereby joining the tantalum clad steel sections. The invention is also directed to tantalum welds or joints formed by cold spraying tantalum powder.
Abstract:
Abradable coatings are provided. The coatings comprise SrTiO in combination with a ceramic, such as ytrria stabilized zirconia, or SrTiO in combination with an MCrAlX, such as NiCoCrAlY. The abradable coatings are suitable for use in high temperature environments found in gas turbine engines. Also provided are metal articles coated with such coatings, and abradable assemblies.
Abstract:
Molybdenum, sputtering targets and sintering characterized as having no or minimal texture banding or through thickness gradient. The molybdenum sputtering targets having a fine, uniform grain size as well as uniform texture, are high purity and can be micro-alloyed to improved performance. The sputtering targets can be round discs, square, rectangular or tubular and can be sputtered to form thin films on substrates. By using a segment-forming method, the size of the sputtering target can be up to 6 m X 5.5 m. The thin films can be used in electronic components such as Thin Film Transistor - Liquid Crystal Displays, Plasma Display Panels, Organic Light Emitting Diodes, Inorganic Light Emitting Diode Displays, Field Emission Displays, solar cells, sensors, semiconductor devices, and gate device for CMOS (complementary metal oxide semiconductor) with tunable work functions.
Abstract:
The invention relates to high purity MoO 2 powder by reduction of ammonium molybdate or molybdenum trioxide using hydrogen as the reducing agent in a rotary or boat furnace. Consolidation of the powder by press/sintering, hot pressing , and/or HIP is used to make discs, slabs, or plates, which are used as sputtering targets. The MoO 2 disc, slab, or plate form is sputtered on a substrate using a suitable sputtering method or other physical means to provide a thin film having a desired film thickness. The thin films have properties such as electrical, optical, surface roughness, and uniformity comparable or superior to those of indium-tin oxide (ITO) and zinc-doped ITO in terms of transparency, conductivity, work function, uniformity, and surface roughness. The MoO 2 and MoO 2 containing thin films can be used in organic light-emitting diodes (OLED), liquid crystal display (LCD), plasma display panel (PDP), field emission display (FED), thin film solar cell, low resistivity ohmic contacts, and other electronic and semiconductor devices.
Abstract:
The allows: Ta-Si, Nb-Si, TaN-Si, NbN-Si and variants are used as enhanced powder anode substrates for electrolytic capacitor anodes (sintered powder masses) with dielectric oxide formation at walls of the internal pores.