PARTIAL SPRAY REFURBISHMENT OF SPUTTERING TARGETS
    92.
    发明申请
    PARTIAL SPRAY REFURBISHMENT OF SPUTTERING TARGETS 审中-公开
    溅射目标的部分喷雾再造

    公开(公告)号:WO2015017627A1

    公开(公告)日:2015-02-05

    申请号:PCT/US2014/049073

    申请日:2014-07-31

    Abstract: In various embodiments, eroded sputtering targets are partially refurbished by spray- depositing particles of target material to at least partially fill certain regions (e.g., regions of deepest erosion) without spray-deposition within other eroded regions (e.g., regions of less erosion). The partially refurbished sputtering targets may be sputtered after the partial refurbishment without substantive changes in sputtering properties (e.g., sputtering rate) and/or properties of the sputtered films.

    Abstract translation: 在各种实施例中,侵蚀的溅射靶通过喷射沉积目标材料的颗粒而部分地翻新,以至少部分地填充某些区域(例如,最深的侵蚀区域),而不会在其它侵蚀区域(例如较少侵蚀的区域)内进行喷雾沉积。 部分翻新的溅射靶可以在部分翻新之后溅射,而溅射性能(例如,溅射速率)和/或溅射膜的性质没有实质性的变化。

    METHOD OF JOINING TANTALUM CLAD STEEL STRUCTURES

    公开(公告)号:WO2008076748A3

    公开(公告)日:2008-06-26

    申请号:PCT/US2007/087214

    申请日:2007-12-12

    Abstract: The present invention is directed to a process for joining tantalum clad steel structures. The process broadly comprises: a) providing a first tantalum clad section, said first tantalum clad section comprising a tantalum layer over a steel layer, with a bonding layer optionally therebetween, with a portion of said steel layer in an edge region not being covered by said tantalum layer or said bonding layer, b) providing a second tantalum clad section, said second tantalum clad section comprising a tantalum layer over a steel layer, with a bonding layer optionally therebetween, with a portion of said steel layer in an edge region not being covered by said tantalum layer or said bonding layer, c) locating said steel edge regions adjacent each other, d) welding the steel edge regions together, e) cold spraying a tantalum powder onto the welded edge regions and over the tantalum layers adjacent said edge regions thereby joining the tantalum clad steel sections. The invention is also directed to tantalum welds or joints formed by cold spraying tantalum powder.

    METHOD OF MAKING MoO2 POWDERS, PRODUCTS MADE FROM MoO2 POWDERS, DEPOSITION OF MoO2 THIN FILMS, AND METHODS OF USING SUCH MATERIALS
    99.
    发明申请
    METHOD OF MAKING MoO2 POWDERS, PRODUCTS MADE FROM MoO2 POWDERS, DEPOSITION OF MoO2 THIN FILMS, AND METHODS OF USING SUCH MATERIALS 审中-公开
    制备MoO2粉末的方法,由MoO 2粉末制成的产品,MoO 2薄膜的沉积以及使用这种材料的方法

    公开(公告)号:WO2005040044A2

    公开(公告)日:2005-05-06

    申请号:PCT/US2004/020932

    申请日:2004-06-29

    Abstract: The invention relates to high purity MoO 2 powder by reduction of ammonium molybdate or molybdenum trioxide using hydrogen as the reducing agent in a rotary or boat furnace. Consolidation of the powder by press/sintering, hot pressing , and/or HIP is used to make discs, slabs, or plates, which are used as sputtering targets. The MoO 2 disc, slab, or plate form is sputtered on a substrate using a suitable sputtering method or other physical means to provide a thin film having a desired film thickness. The thin films have properties such as electrical, optical, surface roughness, and uniformity comparable or superior to those of indium-tin oxide (ITO) and zinc-doped ITO in terms of transparency, conductivity, work function, uniformity, and surface roughness. The MoO 2 and MoO 2 containing thin films can be used in organic light-emitting diodes (OLED), liquid crystal display (LCD), plasma display panel (PDP), field emission display (FED), thin film solar cell, low resistivity ohmic contacts, and other electronic and semiconductor devices.

    Abstract translation: 本发明涉及通过在旋转或船式炉中使用氢作为还原剂还原钼酸铵或三氧化钼的高纯度MoO 2粉末。 使用通过压制/烧结,热压和/或HIP将粉末固结制成用作溅射靶的盘,板或板。 使用合适的溅射方法或其它物理方法将MoO 2盘,板或板形式溅射在基板上,以提供具有所需膜厚度的薄膜。 在透明度,导电性,功函数,均匀性和表面粗糙度方面,薄膜具有与铟锡氧化物(ITO)和掺杂锌的ITO相当或优于电,光学,表面粗糙度和均匀性的性质。 含有MoO2和MoO2的薄膜可用于有机发光二极管(OLED),液晶显示器(LCD),等离子体显示面板(PDP),场发射显示器(FED),薄膜太阳能电池,低电阻率欧姆接触 ,以及其他电子和半导体器件。

    TANTALUM-SILICON AND NIOBIUM-SILICON SUBSTRATES FOR CAPACITOR ANODES
    100.
    发明申请
    TANTALUM-SILICON AND NIOBIUM-SILICON SUBSTRATES FOR CAPACITOR ANODES 审中-公开
    用于电容器阳极的钽硅和铌硅基板

    公开(公告)号:WO2002064858A1

    公开(公告)日:2002-08-22

    申请号:PCT/US2002/004073

    申请日:2002-02-12

    CPC classification number: H01G9/042 H01G9/052 H01G9/0525

    Abstract: The allows: Ta-Si, Nb-Si, TaN-Si, NbN-Si and variants are used as enhanced powder anode substrates for electrolytic capacitor anodes (sintered powder masses) with dielectric oxide formation at walls of the internal pores.

    Abstract translation: 允许:Ta-Si,Nb-Si,TaN-Si,NbN-Si和变体用作用于在内部孔的壁处形成电介质氧化物的电解电容器阳极(烧结粉末质量)的增强的粉末阳极基底。

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