公开(公告)号：US11292924B2

公开(公告)日：2022-04-05

申请号：US14680669

申请日：2015-04-07

Applicant: SILCOTEK CORP.

Inventor： David A. Smith ,  Min Yuan ,  James B. Mattzela ,  Paul H. Silvis

IPC: C09D5/16 ,  C23C16/44 ,  C23C16/56 ,  C23C16/02 ,  C23C16/30

Abstract: A coated article is disclosed. The article includes a coating formed by thermal decomposition, oxidation then functionalization. The article is configured for a marine environment, the marine environment including fouling features. The coating is resistant to the fouling features. Additionally or alternatively, the article is a medical device configured for a protein-containing environment, the protein-containing environment including protein adsorption features. The coating is resistant to the protein adsorption features.

公开(公告)号：US11261524B2

公开(公告)日：2022-03-01

申请号：US16379236

申请日：2019-04-09

Applicant: SILCOTEK CORP.

Inventor： Thomas F. Vezza ,  James B. Mattzela ,  Gary A. Barone ,  Jesse Bischof ,  David A. Smith

IPC: C23C16/44 ,  B32B15/00 ,  H01L21/02

Abstract: Chemical vapor deposition processes and coated articles are disclosed. The process includes a first introducing of a first amount of silane to the enclosed chamber, the first amount of the silane remaining within the enclosed chamber for a first period of time, a first decomposing of the first amount of the silane during at least a portion of the first period of time, a second introducing of a second amount of the silane to the enclosed chamber, the second amount of the silane remaining within the enclosed chamber for a second period of time, and a second decomposing of the second amount of the silane during at least a portion of the second period of time. The process is devoid of inert gas purging between the first decomposing and the second introducing and/or produces a chemical vapor deposition coating devoid of hydrogen bubbles.

公开(公告)号：US20210087708A1

公开(公告)日：2021-03-25

申请号：US17115238

申请日：2020-12-08

Applicant: SILCOTEK CORP.

Inventor： Min YUAN

IPC: C30B29/62 ,  C30B25/18 ,  C30B29/12 ,  C30B33/00 ,  C01B33/04

Abstract: Nano-wire growth processes, nano-wires, and articles having nano-wires are disclosed. The nano-wire growth process includes trapping growth-inducing particles on a substrate, positioning the substrate within a chamber, closing the chamber, applying a vacuum to the chamber, introducing a precursor gas to the chamber, and thermally decomposing the precursor gas. The thermally decomposing of the precursor gas grows nano-wires from the growth-inducing particles. The nano-wires and the articles having the nano-wires are produced by the nano-wire growth process.

公开(公告)号：US10851455B2

公开(公告)日：2020-12-01

申请号：US16121994

申请日：2018-09-05

Applicant: SILCOTEK CORP.

Inventor： Min Yuan ,  James B. Mattzela ,  David A. Smith

IPC: C23C16/00 ,  C23C16/34 ,  C23C16/04 ,  C23C16/455 ,  C23C16/30 ,  C23C16/56

Abstract: Surfaces, articles, and processes having silicon-nitride-containing thermal chemical vapor deposition coating are disclosed. A process includes producing a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. Flow into and from the chamber is restricted or halted during the producing of the silicon-nitride-containing thermal chemical vapor deposition coating on the surface. A surface includes a silicon-nitride-containing thermal chemical vapor deposition coating. The surface has at least a concealed portion that is obstructed from view. An article includes a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. The surface has at least a concealed portion that is obstructed from view.

公开(公告)号：US20200263296A1

公开(公告)日：2020-08-20

申请号：US16870034

申请日：2020-05-08

Applicant: SILCOTEK CORP.

Inventor： Gary A. BARONE

IPC: C23C16/455 ,  C23C16/24

Abstract: Liquid chromatography systems and liquid chromatography components are disclosed. In an embodiment, a liquid chromatography system includes a liquid chromatography component. The liquid chromatography component includes a substrate and an amorphous coating on the substrate. The amorphous coating has a base layer and a surface layer. The base layer includes carboxysilane.

公开(公告)号：US20190309414A1

公开(公告)日：2019-10-10

申请号：US16379236

申请日：2019-04-09

Applicant: SILCOTEK CORP.

Inventor： Thomas F. VEZZA ,  James B. MATTZELA ,  Gary A. BARONE ,  Jesse BISCHOF ,  David A. SMITH

IPC: C23C16/44

Abstract: Chemical vapor deposition processes and coated articles are disclosed. The process includes a first introducing of a first amount of silane to the enclosed chamber, the first amount of the silane remaining within the enclosed chamber for a first period of time, a first decomposing of the first amount of the silane during at least a portion of the first period of time, a second introducing of a second amount of the silane to the enclosed chamber, the second amount of the silane remaining within the enclosed chamber for a second period of time, and a second decomposing of the second amount of the silane during at least a portion of the second period of time. The process is devoid of inert gas purging between the first decomposing and the second introducing and/or produces a chemical vapor deposition coating devoid of hydrogen bubbles.

公开(公告)号：US20190169750A1

公开(公告)日：2019-06-06

申请号：US15895566

申请日：2018-02-13

Applicant: SILCOTEK CORP.

Inventor： Min YUAN ,  David A. SMITH ,  Paul H. SILVIS ,  James B. MATTZELA

IPC: C23C16/52 ,  C23C16/56 ,  C23C16/22 ,  C23C16/30 ,  C23C16/46

Abstract: Coated articles are disclosed. One embodiment of a coated article includes a substrate capable of being subjected to corrosion and a deposited coating on the substrate. The deposited coating has silicon with the substrate resisting corrosion with the deposited coating on the substrate when exposed to 15% NaClO by a rate of at least 5% greater than the corrosion rate of a coating applied with the same process but without introducing the deposition gas at the sub-decomposition temperature and/or the substrate with the deposited coating having a 15% NaClO corrosion rate of between 0 and 3 mils per year.

公开(公告)号：US20190100282A1

公开(公告)日：2019-04-04

申请号：US16148567

申请日：2018-10-01

Applicant: SILCOTEK CORP.

Inventor： Pierre A. LECLAIR ,  David A. SMITH ,  Geoffrey K. WHITE ,  Travis HALL

IPC: B63B1/34 ,  A01K95/00 ,  A01K85/00 ,  B64G1/10 ,  B64C1/00 ,  B64C39/02 ,  G01P5/165 ,  F42B12/80

Abstract: Articles having a hydrophobically-coated region and processes of using such articles are disclosed. The article includes a substrate material and a hydrophobically-coated region on the substrate material, the hydrophobically-coated region being contacted or configured for contact with a fluid. The hydrophobically-coated region is configured to repulse the fluid from the article while the article is moving through the fluid. The process includes using the article by moving the article through the fluid wherein the hydrophobically-coated region repulses the fluid from the article.

公开(公告)号：US09975143B2

公开(公告)日：2018-05-22

申请号：US14784731

申请日：2014-05-14

Applicant: SILCOTEK CORP.

Inventor： David A. Smith ,  Paul H. Silvis

IPC: B05D1/00 ,  B05D5/08 ,  C09D5/08

CPC classification number: B05D1/60 ,  B05D5/083 ,  C09D5/08

Abstract: Chemical vapor deposition articles and processes include a chemical vapor deposition functionalization on a material, the material including an sp3 arrangement of carbon. The chemical vapor deposition functionalization is positioned to be contacted by a process fluid, a hydrocarbon, an analyte, exhaust, or a combination thereof. Additionally or alternatively, the chemical vapor deposition functionalization is not of a refrigerator shelf or a windshield.

公开(公告)号：US09915001B2

公开(公告)日：2018-03-13

申请号：US14821949

申请日：2015-08-10

Applicant: SILCOTEK CORP.

Inventor： Min Yuan ,  David A. Smith ,  Paul H. Silvis ,  James B. Mattzela

IPC: C23C16/30 ,  C23C16/46 ,  C23C16/56 ,  C23C16/52 ,  C23C16/22

CPC classification number: C23C16/52 ,  C23C16/22 ,  C23C16/30 ,  C23C16/46 ,  C23C16/56

Abstract: A chemical vapor deposition process and coated article are disclosed. The chemical vapor deposition process includes positioning an article in a chemical vapor deposition chamber, then introducing a deposition gas to the chemical vapor deposition chamber at a sub-decomposition temperature that is below the thermal decomposition temperature of the deposition gas, and then heating the chamber to a super-decomposition temperature that is equal to or above the thermal decomposition temperature of the deposition gas resulting in a deposited coating on at least a surface of the article from the introducing of the deposition gas. The chemical vapor deposition process remains within a pressure range of 0.01 psia and 200 psia and/or the deposition gas is dimethylsilane. The coated article includes a substrate subject to corrosion and a deposited coating on the substrate, the deposited coating having silicon, and corrosion resistance.