公开(公告)号：US20250092517A1

公开(公告)日：2025-03-20

申请号：US18899215

申请日：2024-09-27

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Jaakko Anttila

IPC: C23C16/448

Abstract: The current disclosure relates to a precursor capsule for holding a precursor for a vapor deposition process. The precursor capsule comprises a vapor-permeable shell configured to define a precursor space, and to allow precursor in vapor form to leave the precursor capsule under vaporization conditions. The disclosure further relates to a precursor vessel comprising capsules according to the current disclosure, to a vapor deposition apparatus and a method.

公开(公告)号：US12217954B2

公开(公告)日：2025-02-04

申请号：US17407839

申请日：2021-08-20

Applicant: ASM IP Holding B.V.

Inventor： Shaoren Deng ,  Andrea Illiberi ,  Daniele Chiappe ,  Eva Tois ,  Giuseppe Alessio Verni ,  Michael Givens ,  Varun Sharma ,  Chiyu Zhu ,  Shinya Iwashita ,  Charles Dezelah ,  Viraj Madhiwala ,  Jan Willem Maes ,  Marko Tuominen ,  Anirudhan Chandrasekaran

IPC: H01L21/02 ,  B08B3/08 ,  B08B5/00 ,  C11D7/02 ,  C11D7/24 ,  C11D7/26 ,  C23C16/02 ,  H01L21/285

Abstract: Methods for cleaning a substrate are disclosed. The substrate comprises a dielectric surface and a metal surface. The methods comprise providing a cleaning agent to the reaction chamber.

公开(公告)号：US11739427B2

公开(公告)日：2023-08-29

申请号：US17646274

申请日：2021-12-28

Applicant: ASM IP HOLDING B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Suvi Haukka ,  Marko Tuominen ,  Chiyu Zhu

IPC: C23F4/02 ,  C23F1/12 ,  H01L21/3213 ,  C09K13/00 ,  H01L21/311 ,  C09K13/08 ,  C09K13/10 ,  H01J37/32 ,  H01L21/3065

CPC classification number: C23F4/02 ,  C09K13/00 ,  C09K13/08 ,  C09K13/10 ,  C23F1/12 ,  H01J37/32009 ,  H01J37/3244 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/31138

Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

公开(公告)号：US20230212740A1

公开(公告)日：2023-07-06

申请号：US18147376

申请日：2022-12-28

Applicant: ASM IP Holding, B.V.

Inventor： Chiyu Zhu ,  Sukanya Datta ,  Jan Willem Maes

IPC: C23C16/08 ,  C23C16/455 ,  C23C16/02 ,  H01L21/02

CPC classification number: C23C16/08 ,  C23C16/45525 ,  C23C16/0227 ,  H01L21/02046

Abstract: The present disclosure relates to methods and apparatuses for depositing a conductive layer on another conductive layer of a substrate. The method comprises providing the substrate comprising the first conductive layer in a reaction chamber, providing a cleaning agent comprising a metal halide into the reaction chamber in a vapor phase to clean the substrate and providing a second material precursor into the reaction chamber in a vapor phase to deposit the second conductive layer on the first conductive layer. The disclosure further relates to a method of forming a semiconductor structure and to a semiconductor processing assembly.

公开(公告)号：US20220119962A1

公开(公告)日：2022-04-21

申请号：US17646389

申请日：2021-12-29

Applicant: ASM IP HOLDING B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Suvi Haukka ,  Marko Tuominen ,  Chiyu Zhu

IPC: C23F4/02 ,  C23F1/12 ,  H01L21/3213 ,  C09K13/00 ,  H01L21/311 ,  C09K13/08 ,  C09K13/10 ,  H01J37/32 ,  H01L21/3065

Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

公开(公告)号：US20220068634A1

公开(公告)日：2022-03-03

申请号：US17407839

申请日：2021-08-20

Applicant: ASM IP Holding B.V.

Inventor： Shaoren Deng ,  Andrea Illiberi ,  Daniele Chiappe ,  Eva Tois ,  Giuseppe Alessio Verni ,  Michael Givens ,  Varun Sharma ,  Chiyu Zhu ,  Shinya Iwashita ,  Charles Dezelah ,  Viraj Madhiwala ,  Jan Willem Maes ,  Marko Tuominen ,  Anirudhan Chandrasekaran

IPC: H01L21/02 ,  H01L21/285 ,  B08B3/08 ,  B08B5/00 ,  C23C16/02 ,  C11D11/00 ,  C11D7/26 ,  C11D7/24 ,  C11D7/02

Abstract: Methods for cleaning a substrate are disclosed. The substrate comprises a dielectric surface and a metal surface. The methods comprise providing a cleaning agent to the reaction chamber.

公开(公告)号：US11233133B2

公开(公告)日：2022-01-25

申请号：US16240392

申请日：2019-01-04

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Timo Asikainen ,  Robert Brennan Milligan

IPC: H01L29/49 ,  H01L21/285 ,  C23C16/32 ,  H01L21/02 ,  H01L21/3205 ,  C23C16/04 ,  C23C16/455 ,  H01L21/28 ,  H01L29/78

Abstract: Methods of forming thin-film structures including one or more NbMC layers, and structures and devices including the one or more NbMC layers are disclosed. The NbMC layers enable tuning of various structure and device properties, including resistivity, current leakage, and work function.

公开(公告)号：US20210391440A1

公开(公告)日：2021-12-16

申请号：US17411306

申请日：2021-08-25

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Kiran Shrestha ,  Petri Raisanen ,  Michael Eugene Givens

IPC: H01L29/51 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66 ,  C23C16/455 ,  H01L29/49 ,  C23C16/34

Abstract: Methods for forming a semiconductor device structure are provided. The methods may include forming a molybdenum nitride film on a substrate by atomic layer deposition by contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, contacting the substrate with a second vapor phase reactant comprise a nitrogen precursor, and contacting the substrate with a third vapor phase reactant comprising a reducing precursor. The methods provided may also include forming a gate electrode structure comprising the molybdenum nitride film, the gate electrode structure having an effective work function greater than approximately 5.0 eV. Semiconductor device structures including molybdenum nitride films are also provided.

公开(公告)号：US11183367B2

公开(公告)日：2021-11-23

申请号：US16881868

申请日：2020-05-22

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Suvi Haukka ,  Marko Tuominen ,  Chiyu Zhu

IPC: H01J37/32 ,  C23F1/12 ,  H01L21/311 ,  C23G5/00 ,  H01L21/3213

Abstract: Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.

公开(公告)号：US11164955B2

公开(公告)日：2021-11-02

申请号：US16924595

申请日：2020-07-09

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Kiran Shrestha ,  Petri Raisanen ,  Michael Eugene Givens

IPC: H01L29/51 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66 ,  C23C16/455 ,  H01L29/49 ,  C23C16/34

Abstract: Methods for forming a semiconductor device structure are provided. The methods may include forming a molybdenum nitride film on a substrate by atomic layer deposition by contacting the substrate with a first vapor phase reactant comprising a molybdenum precursor, contacting the substrate with a second vapor phase reactant comprise a nitrogen precursor, and contacting the substrate with a third vapor phase reactant comprising a reducing precursor. The methods provided may also include forming a gate electrode structure comprising the molybdenum nitride film, the gate electrode structure having an effective work function greater than approximately 5.0 eV. Semiconductor device structures including molybdenum nitride films are also provided.