公开(公告)号：US20250029834A1

公开(公告)日：2025-01-23

申请号：US18908990

申请日：2024-10-08

Applicant: ASM IP Holding B.V.

Inventor： Bhushan Zope ,  Shankar Swaminathan ,  Kiran Shrestha ,  Chiyu Zhu ,  Henri Jussila ,  Qi Xie

IPC: H01L21/02 ,  H01L21/768

Abstract: Methods for depositing a molybdenum metal film directly on a dielectric material surface of a substrate by a cyclical deposition process are disclosed. The methods may include: providing a substrate comprising a dielectric surface into a reaction chamber; and depositing a molybdenum metal film directly on the dielectric surface, wherein depositing comprises: contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. Semiconductor device structures including a molybdenum metal film disposed directly on a surface of a dielectric material deposited by the methods of the disclosure are also disclosed.

公开(公告)号：US12119228B2

公开(公告)日：2024-10-15

申请号：US17845325

申请日：2022-06-21

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Henri Jussila ,  Qi Xie

IPC: C23C16/06 ,  C23C16/02 ,  C23C16/04 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01L21/28568 ,  C23C16/0227 ,  C23C16/04 ,  C23C16/45534 ,  C23C16/45553 ,  H01L21/76879

Abstract: A method of selectively depositing a material on a substrate with a first and second surface, the first surface being different than the second surface. The depositing of the material on the substrate comprises: supplying a bulk precursor comprising metal atoms, halogen atoms and at least one additional atom not being a metal or halogen atom to the substrate; and supplying a reactant to the substrate. The bulk precursor and the reactant have a reaction with the first surface relative to the second surface to form more material on the first surface than on the second surface.

公开(公告)号：US20240218505A1

公开(公告)日：2024-07-04

申请号：US18396829

申请日：2023-12-27

Applicant: ASM IP Holding B.V.

Inventor： Jiyeon Kim ,  YoungChol Byun ,  Petri Raisanen ,  Sang Ho Yu ,  Sukanya Datta ,  Chiyu Zhu ,  Jan Willem Maes ,  Saima Ali ,  Elina Färm

IPC: C23C16/42 ,  C23C16/04

CPC classification number: C23C16/42 ,  C23C16/04

Abstract: Methods of forming molybdenum silicide are disclosed. Exemplary methods can include selectively forming molybdenum silicide on a first surface relative to a second surface. Additionally or alternatively, exemplary methods can include a cleaning step prior to forming the molybdenum silicide.

公开(公告)号：US20240096633A1

公开(公告)日：2024-03-21

申请号：US18367500

申请日：2023-09-13

Applicant: ASM IP Holding B.V.

Inventor： Elina Färm ,  Jan Willem Maes ,  Charles Dezelah ,  Shinya Iwashita ,  Arpita Saha ,  Eva Tois ,  Marko Tuominen ,  Janne-Petteri Niemelä ,  Patricio Eduardo Romero ,  Chiyu Zhu ,  Glen Wilk ,  Holger Saare ,  YoungChol Byun ,  Jonahtan Bakke

IPC: H01L21/285 ,  C23C16/18 ,  C23C16/455 ,  C23C16/56

CPC classification number: H01L21/28568 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/56

Abstract: The disclosure relates to methods of selectively depositing material comprising a group 3 to 6 transition metal on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process. The method includes providing a substrate in a reaction chamber, providing a transition metal precursor into the reaction chamber in a vapor phase, wherein the transition metal precursor comprises an aromatic ligand and providing a second precursor into the reaction chamber in a vapor phase to deposit transition metal on the first surface of the substrate. The disclosure further relates to a transition metal layers, and to deposition assemblies.

公开(公告)号：US11581220B2

公开(公告)日：2023-02-14

申请号：US17151435

申请日：2021-01-18

Applicant: ASM IP Holding B.V.

Inventor： Bhushan Zope ,  Kiran Shrestha ,  Shankar Swaminathan ,  Chiyu Zhu ,  Henri Tuomas Antero Jussila ,  Qi Xie

IPC: H01L21/768 ,  H01L21/285 ,  C23C16/14 ,  C23C16/02 ,  H01L23/532 ,  C23C16/04 ,  C23C16/455

Abstract: Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process are disclosed. The methods may include: providing a substrate comprising a dielectric surface into a reaction chamber; depositing a nucleation film directly on the dielectric surface; and depositing a molybdenum metal film directly on the nucleation film, wherein depositing the molybdenum metal film includes: contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. Semiconductor device structures including a molybdenum metal film disposed over a surface of a dielectric material with an intermediate nucleation film are also disclosed.

公开(公告)号：US20220195595A1

公开(公告)日：2022-06-23

申请号：US17554253

申请日：2021-12-17

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Jaakko Anttila

IPC: C23C16/448

Abstract: The current disclosure relates to a precursor capsule for holding a precursor for a vapor deposition process. The precursor capsule comprises a vapor-permeable shell configured to define a precursor space, and to allow precursor in vapor form to leave the precursor capsule under vaporization conditions. The disclosure further relates to a precursor vessel comprising capsules according to the current disclosure, to a vapor deposition apparatus and a method.

公开(公告)号：US20220119961A1

公开(公告)日：2022-04-21

申请号：US17646274

申请日：2021-12-28

Applicant: ASM IP HOLDING B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Suvi Haukka ,  Marko Tuominen ,  Chiyu Zhu

IPC: C23F4/02 ,  C23F1/12 ,  H01L21/3213 ,  C09K13/00 ,  H01L21/311 ,  C09K13/08 ,  C09K13/10 ,  H01J37/32 ,  H01L21/3065

Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

公开(公告)号：US20210399111A1

公开(公告)日：2021-12-23

申请号：US17465127

申请日：2021-09-02

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Michael Givens ,  Eric Shero ,  Jerry Winkler ,  Petri Räisänen ,  Timo Asikainen ,  Chiyu Zhu ,  Jaakko Anttila

IPC: H01L29/49 ,  C23C16/455 ,  H01L21/285 ,  H01L21/3205 ,  C23C16/06 ,  C23C16/34

Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

公开(公告)号：US11114283B2

公开(公告)日：2021-09-07

申请号：US15923834

申请日：2018-03-16

Applicant: ASM IP Holding B.V.

Inventor： Tom Blomberg ,  Varun Sharma ,  Chiyu Zhu

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/687

Abstract: A reactor for processing substrates and methods for manufacturing and using the reactor are disclosed. Specifically, the reactor can include a material that forms gas compounds. The gas compounds are then easily removed from the reactor, thus reducing or avoiding contamination of the substrates in the reactor that would otherwise arise.

公开(公告)号：US11056344B2

公开(公告)日：2021-07-06

申请号：US15691241

申请日：2017-08-30

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Kiran Shrestha ,  Qi Xie

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/04 ,  C23C16/08 ,  C23C16/02 ,  H01L21/28

Abstract: There is provided a method of forming a layer, comprising depositing a seed layer on the substrate and depositing a bulk layer on the seed layer. Depositing the seed layer comprises supplying a first precursor comprising metal and halogen atoms to the substrate; and supplying a first reactant to the substrate. Depositing the bulk layer comprises supplying a second precursor comprising metal and halogen atoms to the seed layer and supplying a second reactant to the seed layer.