Abstract:
Base pads are spaced by a pitch on a support surface. Conducting members, optionally Cu or other metal pillars, extend up from the base pads to top pads. A top pad interconnector connects the top pads in a configuration establishing an inductor current path between the base pads.
Abstract:
A particular device includes a substrate and a spiral inductor coupled to the substrate. The spiral inductor includes a first conductive spiral and a second conductive spiral overlaying the first conductive spiral. A first portion of an innermost turn of the spiral inductor has a first thickness in a direction perpendicular to the substrate. The first portion of the innermost turn includes a first portion of the first conductive spiral and does not include the second conductive spiral. A second portion of the innermost turn includes a first portion of the second conductive spiral. A portion of an outermost turn of the spiral inductor has a second thickness in the direction perpendicular to the substrate that is greater than the first thickness. A portion of the outermost turn includes a second portion of the first conductive spiral and a second portion of the second conductive spiral.
Abstract:
A diplexer includes a substrate having a set of through substrate vias. The diplexer also includes a first set of traces on a first surface of the substrate. The first traces are coupled to the through substrate vias. The diplexer further includes a second set of traces on a second surface of the substrate that is opposite the first surface. The second traces are coupled to opposite ends of the set of through substrate vias. The through substrate vias and the traces also operate as a 3D inductor. The diplexer also includes a capacitor supported by the substrate.
Abstract:
Three-dimensional (3D) Radio Frequency (RF) inductor-capacitor (LC) band pass filters having through-glass-vias (TGVs). One such L-C filter circuit includes a glass substrate, a first portion of a first inductor formed on a first surface of the glass substrate, a second portion of the first inductor formed on a second surface of the glass substrate, and a first set of TGVs configured to connect the first and second portions of the first inductor. Additionally the L-C filter circuit can include a second inductor similar to the first inductor, and a metal-insulator-metal (MIM) capacitor formed between the first and second inductor, such that the first and second inductor are coupled through the MIM capacitor.
Abstract:
Provided are methods and apparatus to improve upon conventional piezoelectric resonators. Also provided are apparatus and methods to improve upon filters having piezoelectric resonators. In an example, a piezoelectric resonator includes a substrate, and a piezoelectric material disposed on the substrate. A first electrode and a second electrode are disposed on the piezoelectric material. The piezoelectric resonator has a passband, and a portion of the perimeter of the piezoelectric material is anchored to the substrate to suppress an in-band spurious mode of the piezoelectric material. The portion, if unanchored, would exhibit maximum, near-maximum, and/or excessive displacement deflection at resonance. The piezoelectric resonator can be integrated in a semiconductor die. Multiple filters having piezoelectric resonators with respective different passbands can be disposed on the substrate.
Abstract:
A method includes predicting a memory access pattern of each master of a plurality of masters. The plurality of masters can access a multi-channel memory via a crossbar interconnect, where the multi-channel memory has a plurality of banks. The method includes identifying a page size associated with each bank of the plurality of banks. The method also includes assigning at least one bank of the plurality of banks to each master of the plurality of masters based on the memory access pattern of each master.
Abstract:
Methods and devices of a capacitor in a semiconductor device having an increased capacitance are disclosed. In a particular embodiment, a method of forming a capacitor is disclosed. A section of a first insulating material between a first metal contact element and a second metal contact element is removed to form a channel. A second insulating material is deposited in the channel between the first metal contact element and the second metal contact element.