公开(公告)号：JP2002237383A

公开(公告)日：2002-08-23

申请号：JP2001101312

申请日：2001-03-30

Applicant: SEIKO EPSON CORP

Inventor： FUJIMORI NATSUO ,  ISHIDA MASAYA

IPC: H05B33/10 ,  H01L51/50 ,  H05B33/12 ,  H05B33/14 ,  H05B33/22

Abstract: PROBLEM TO BE SOLVED: To arrange liquid in a prescribed region steadily (without arranging in a neighboring region) and to arrange it in uniform thickness in the region, when the light emitting layer of the organic EL element is arranged by ink-jet method or the like. SOLUTION: A SiO2 film pattern 3 having an opening 3a is formed on the ITO electrode 2. Next, an organic ultra-thin film pattern 41 having an opening 4b is formed on the SiO2 film pattern 3. The surface of the organic ultra-thin film pattern 41 is liquid repellent. A hole transport layer 61 is formed in this opening 4b and then, a liquid 7 containing luminous layer forming material is discharged over it by ink-jet method. This liquid 7 enters the opening 4b without staying at the surface of the organic ultra-thin film pattern 41.

公开(公告)号：JP2002023367A

公开(公告)日：2002-01-23

申请号：JP2000202202

申请日：2000-07-04

Applicant: SEIKO EPSON CORP

Inventor： ISHIDA MASAYA

IPC: G03F7/039 ,  B05D3/06 ,  B05D3/10 ,  B32B9/00 ,  G03F7/075 ,  G03F7/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To solve the problem that the cost of production of an organic molecular film pattern using ultraviolet ray and a photomask does not lower because of a relatively long tact time. SOLUTION: An organic molecular film of

公开(公告)号：JP2002023356A

公开(公告)日：2002-01-23

申请号：JP2000202199

申请日：2000-07-04

Applicant: SEIKO EPSON CORP

Inventor： ISHIDA MASAYA

IPC: G03F7/004 ,  B05D3/06 ,  B05D7/24 ,  B82B1/00 ,  G03F7/075 ,  G03F7/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To unnecessitate a special device for an ultraviolet light irradiation equipment required so far because much ultraviolet light is absorbed in a quartz substrate as the substrate of a photomask and in the air when ultraviolet light in a wavelength range of

公开(公告)号：JP2002019008A

公开(公告)日：2002-01-22

申请号：JP2000202200

申请日：2000-07-04

Applicant: SEIKO EPSON CORP

Inventor： ISHIDA MASAYA

IPC: G03F7/004 ,  B05D1/36 ,  B05D3/06 ,  B32B9/00 ,  G03F7/20 ,  G03F7/36 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To solve that problem that when an organomolecular film is decomposed/removed by ultraviolet rays, the film has to be irradiated for several tens minutes so that a long time is required for patterning. SOLUTION: On the surface 11 of a substrate, after the first organomolecular film 12 of 3 nm or below thickness is formed, the second organomolecular film 13 having different functional groups is formed. Part of the film 13 is irradiated with ultraviolet rays through a photomask, only the unmasked place is removed selectively, and a pattern is formed.

公开(公告)号：JP2002015866A

公开(公告)日：2002-01-18

申请号：JP2000199988

申请日：2000-06-30

Applicant: SEIKO EPSON CORP

Inventor： SHIMODA TATSUYA ,  MIYASHITA SATORU ,  INOUE SATOSHI ,  ISHIDA MASAYA

IPC: H05B33/10 ,  G09F9/00 ,  H01L27/32 ,  H01L51/50 ,  H01L51/52 ,  H05B33/02 ,  H05B33/12 ,  H05B33/14 ,  H05B33/22 ,  H05B33/26

Abstract: PROBLEM TO BE SOLVED: To manufacture an organic electroluminescent display formed using the fine structures. SOLUTION: Plural fine structures 20 are fitted in a surface of a transparent substrate 10 close to pixel-forming positions, and coated with the insulating protecting thin film 12 (Fig. 1 (a)). After forming contact holes 13, plural transparent electrodes 14 are formed corresponding to the pixel-forming positions. A bank 15 as an insulating thick film is formed at pats except for a pixel- forming range 40 (Fig. 1 (b)). The work for coating the pixel-forming range 40 with the liquid material by the ink-jet method and for drying it is repeated so as to form a light-emitting layer 43 formed of a hole-filling layer 41 and an organic EL layer 42 in the pixel-forming range 14 (Fig. 1 (c)). A surface of the transparent substrate 10 is formed with a negative electrode layer 16, made of a metal such as aluminum through vapor deposition or sputtering.

公开(公告)号：JP2001284288A

公开(公告)日：2001-10-12

申请号：JP2000098150

申请日：2000-03-31

Applicant: SEIKO EPSON CORP

Inventor： ISHIDA MASAYA

IPC: C23C18/16 ,  C23C18/18 ,  H01L21/288 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To fill a recessed part on a base material having recess and projection by forming a thin film in a recessed part only. SOLUTION: The fine structure has base materials (10, 12) with recess and projection, an extremely thin film pattern (18) consisting of organic compound with amino group or thiol group on a recessed part of the base material, and a layer pattern (20) based on the extremely thin film pattern.

公开(公告)号：JP2001284274A

公开(公告)日：2001-10-12

申请号：JP2000098154

申请日：2000-03-31

Applicant: SEIKO EPSON CORP

Inventor： FURUSAWA MASAHIRO ,  ISHIDA MASAYA

IPC: G03F7/075 ,  C01B33/02 ,  H01L21/208 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a method that has accuracy of micron order, and at the same time forms a silicon film pattern of improved quality by a simple process. SOLUTION: An organic molecule film 12 is used on the surface of a substrate 11 to form lyophilic and liquid-repellent parts in a specific pattern, at the same time, liquid containing an organic silicon compound is selectively applied to the lyophilic part, and an application film is converted into a silicon film by heat treatment and/or light treatment, thus forming a silicon film 16 at the lyophilic part only.

公开(公告)号：JP2000105183A

公开(公告)日：2000-04-11

申请号：JP27444798

申请日：1998-09-29

Applicant: SEIKO EPSON CORP

Inventor： ISHIDA MASAYA ,  IDE TSUGIO ,  KATSUYAMA TAKANOBU

IPC: G01B21/30 ,  G01N37/00 ,  G01Q60/16 ,  G01Q70/06 ,  G01Q80/00 ,  G11B9/00 ,  G11B9/14 ,  G01N13/12

Abstract: PROBLEM TO BE SOLVED: To permit an excellent connection between a probe array and an object by setting the probe array to at least two-stage thickness, by forming a connection part at a thin part, and by preventing the object from coming into contact with the connection part. SOLUTION: A probe array that a probe device used for micromachining or the like has is provided with, for example, a step 19 at the periphery part. The step 19 is formed, for example, by allowing a silicon dioxide film to be subjected to patterning formation at a specific part of the center part of a silicon single crystal substrate, and by using the oxide film as a mask for etching the periphery part of a substrate 10. The depth of the etching should be set to, for example, 0.2 mm. Because of the step 19, a connection part 16, for example, to be soldered is not brought into contact with an object 20, and a large area can be machined by the probe array. By setting the size of the scanning surface of the probe array to nearly the same as that of the object 20, by providing a specific step around the object 20, or the like, the connection part 16 may not be brought into contact with the object 20.

公开(公告)号：JP2000100370A

公开(公告)日：2000-04-07

申请号：JP27284298

申请日：1998-09-28

Applicant: SEIKO EPSON CORP

Inventor： ISHIDA MASAYA ,  IDE TSUGIO ,  KATSUYAMA TAKANOBU

IPC: H01J37/30 ,  G01N37/00 ,  G01Q60/16 ,  G01Q70/06 ,  G01Q80/00 ,  G11B9/00 ,  G11B9/14 ,  G01N13/10 ,  G01N13/12

Abstract: PROBLEM TO BE SOLVED: To provide a probe array for fine machining, enabling easy manufacture and uniform machining. SOLUTION: A probe array 1 having a plurality of probes has an elastic material at least for a part of a probe 102 and probe base 100. As a result, the probes are constituted so as to be movable along a direction approximately vertical to the machined surface of the probes, depending on the stresses applied to the fine end of the probe 102. According to this construction, the dispersion of the fine end height of each probe or irregularities on machined suface, even if there is any, are absorbed by the elastic material and a uniform machining area is obtained.

公开(公告)号：JP2000090872A

公开(公告)日：2000-03-31

申请号：JP26128998

申请日：1998-09-16

Applicant: SEIKO EPSON CORP

Inventor： KATSUYAMA TAKANOBU ,  ISHIDA MASAYA ,  IDE TSUGIO

IPC: H01J37/28 ,  B62D57/00 ,  B82B3/00 ,  G01N37/00 ,  G01Q60/24 ,  G01Q80/00 ,  H01J37/30 ,  G01N13/16

Abstract: PROBLEM TO BE SOLVED: To provide a fine working device capable of stably forming a large area at a high speed. SOLUTION: This device is constituted so as to work a surface to be worked S by bringing a tip of a needle into contact with the surface S to be worked or arranging the tip closely to the surface S. In this case, this probe 20 for working for fine working is provided with a linear contact working pin 201 constituted so that the pin 201 can linearly contact with the surface to be worked. By controlling an angle formed by a contact line and a moving direction, a large area can be worked in a short time as compared with a point contact type probe.