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公开(公告)号：JP2002031788A
公开(公告)日：2002-01-31
申请号：JP2000217184
申请日：2000-07-18
Applicant: SONY CORP
Inventor： MATSUI ERIKO , AKAO HIROTAKA , TODA ATSUSHI
Abstract: PROBLEM TO BE SOLVED: To provide an optical device using a liquid crystal device as an optical switch with the efficiency significantly improved in such an optical device that is excited only by the intensity of light without using an electric field or current but can control the light, that has a high-quality display function with a high contrat ratio, that can be made a large screen, and that can perform integrated light emission operation. SOLUTION: The device has an optical waveguide (optical fiber) 1, a transparent substrate 2 crossing the optical waveguide (optical fiber) 1, and a liquid crystal device 3 disposed in the crossing part of these. The liquid crystal device 3 has a ferroelectric liquid crystal with
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公开(公告)号：JP2002031781A
公开(公告)日：2002-01-31
申请号：JP2000217185
申请日：2000-07-18
Applicant: SONY CORP
Inventor： TODA ATSUSHI , MATSUI ERIKO , AKAO HIROTAKA , ISHIBASHI AKIRA
IPC: G02F1/065 , G02B27/28 , G02F1/13 , G02F1/137 , G02F1/141 , G02F1/31 , H01L33/28 , H01L33/32 , H01L33/48 , H01S5/022 , H01S5/323 , H01L33/00
Abstract: PROBLEM TO BE SOLVED: To provide an optical waveguide type optical device as, for example, a display, constituted in such a manner that the contrast ratio of the exit light led out of an optical waveguide to the outside is increased and that a bright and clear image can be obtained, and to provide a manufacturing method which makes it possible to obtain a high-quality optical device by repairing distortion, crack, burring, etc., which occur in cutting when a transparent substrate or a laminate of a transparent fiber and a transparent electrode as the component thereof is manufactured. SOLUTION: This optical device is regulated at the angle formed by the longitudinal direction of the incident surface 1Z of the optical waveguide 1 or a fiber arraying direction and a polarization direction of incident light to
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公开(公告)号：JP2000196192A
公开(公告)日：2000-07-14
申请号：JP37657198
申请日：1998-12-24
Applicant: SONY CORP
Inventor： SHIRAI KATSUYA , KOJIMA SHIGERU , TODA ATSUSHI , MORI YOSHIFUMI
Abstract: PROBLEM TO BE SOLVED: To provide a fine particle structure body for preventing aggregation, a light-emitting device using it, and a method for manufacturing the fine particle structure body. SOLUTION: A fine particle structure body is provided with a plurality of fine particles 11, made of ZnO or the like, and each of the fine particles 11 is connected to one another in a network form by a crosslinking part 12. More specifically, the crosslinking part 12 that exists among particles becomes a support part, thus preventing the fine particles 11 from being aggregated. Each of the fine particles 11 is composed of a fine crystal with a crystal particle diameter of 100 nm or less and has an inter-band luminous function and a donor acceptor pair luminous function. This sort of fine particle structure body is used as a material for composing the luminous part of a light-emitting device. The fine particle structure body is manufactured by applying a voltage between positive and negative electrodes with pure water as an electrolyte, a highly pure Zn plate as the positive electrode, and a semiconductor substrate as the negative electrode.
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公开(公告)号：JPH11195815A
公开(公告)日：1999-07-21
申请号：JP92098
申请日：1998-01-06
Applicant: SONY CORP
Inventor： TSUKAMOTO HIRONORI , HINO TOMOKIMI , TANIGUCHI OSAMU , TODA ATSUSHI , MAKINO SAKURAKO
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element for which the operation life can be extended, by restricting deterioration of electrode while electricity is carried, and also provide its production method, optical recording and/or reproducing equipment using such a semiconductor light-emitting element. SOLUTION: In a semiconductor laser having a plurality of II-VI Group compound semiconductor layer laminated on a substrate, when making a wafer- shaped n-type GaAs substrate 1 where the laser construction has been formed into chips, the n-type GaAs substrate 1 is cleaved together with a plurality of II-VI Group compound semiconductor layers, in such a manner that distance L between the stripe portion and the end face 16 parallel to the strip portion becomes larger than the overall thickness (d) of the laser chip, more desirable larger than 3 times the overall thickness (d) of the laser tip, or practically greater than 400 μm. For example, the overall thickness (d) of the laser chip is set at 600 μm, and at this time, the distance L between the stripe portion and the end face 16 is set at 600 μm.
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公开(公告)号：JPH10233554A
公开(公告)日：1998-09-02
申请号：JP3471997
申请日：1997-02-19
Applicant: SONY CORP
Inventor： NAKANO KAZUSHI , TODA ATSUSHI
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element, wherein characteristics can be stabilized and a long life II-VI compound semiconductor is used. SOLUTION: In a semiconductor laser of an SCH structure wherein a ZnCdSe layer is an active layer, a ZnSSe layer is an optical waveguide layer and a ZnMgSSe layer is a clad layer, a p-type ZnCdSe active layer 6 is used as an active layer. An effective acceptor concentration NA-ND of the p-type ZnCdSe active layer 6 is 1×10 cm or more and 1×10 cm or less, e.g. 6×10 cm . A p-type ZnSSe optical waveguide layer can be provided between an n-type ZnSSe optical waveguide layer 5 and the p-type ZnCdSe active layer 6. The effective acceptor concentration NA-ND of the p-type ZnSSe optical waveguide layer is 1×10 cm or more and 1×10 cm or less, e.g. 6×10 cm and a thickness thereof is 30nm, for example.
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Patent Agency Ranking96.发明专利
公开(公告)号：JPH10190154A
公开(公告)日：1998-07-21
申请号：JP28972497
申请日：1997-10-22
Applicant: SONY CORP
Inventor： ISHIBASHI AKIRA , TANIGUCHI OSAMU , HINO TOMOKIMI , KOBAYASHI TAKASHI , NAKANO KAZUSHI , NAKAYAMA NORIKAZU , TODA ATSUSHI , TSUKAMOTO HIRONORI , MAKINO SAKURAKO
Abstract: PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor light emitting element having excellent characteristics and a long service life, a method for manufactur ing the element, and an optical recording and/or reproducing device using the light element as a light emitting element. SOLUTION: In a semiconductor light emitting element using a II-VI compound semiconductor, at least an active layer 7 is formed to have rugged surfaces and p-type contact layers 11, 12, and 13 are formed to have flat surfaces. The standard deviation of the height of the rugged surfaces of the active layer 7 is adjusted to, for example, about 1-3nm. In addition, the ratio of the intensity of a molecular beam of a group VI element to that of a molecular beam of a group II element is optimized by changing the ratio in accordance with a layer to be grown when clad layers 5 and 9, light guide layers 6 and 8, the active layer 7, the contact layers 11, 12, and 13, etc., are grown manufacturing the semiconductor light emitting element.
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公开(公告)号：JPH06252446A
公开(公告)日：1994-09-09
申请号：JP3889993
申请日：1993-02-26
Applicant: SONY CORP
Inventor： ISHIBASHI AKIRA , TODA ATSUSHI , NAKAYAMA NORIKAZU
IPC: H01L21/203 , H01L33/08 , H01L33/28 , H01L33/30 , H01L33/42 , H01L33/60 , H01S5/00 , H01L33/00 , H01S3/18
Abstract: PURPOSE:To provide a method of manufacturing self-emission type semiconductor devices capable of making a display in colors on the same substrate through a crystal growth process carried out only once. CONSTITUTION:A first process wherein a first conductivity type clad layer 3 is made to grow on a substrate 1 on which a periodic shielding structure 2 is formed, a second process wherein an active layer 4 is grown on a region sandwiched in between the shielding structure 2 as modulated in composition, and a third process wherein a second conductivity-type clad layer 5 is made to grow are provided.
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公开(公告)号：JPH06163420A
公开(公告)日：1994-06-10
申请号：JP30553092
申请日：1992-11-16
Applicant: SONY CORP
Inventor： TODA ATSUSHI
IPC: H01L21/205 , H01L21/285 , H01L21/31
Abstract: PURPOSE:To obtain a semiconductor device having excellent characteristics by a method wherein, in a vapor-growth device, a sharp change in composition is conducted on a hetero interface in a precise manner, and the generation of crystal transposition is suppressed. CONSTITUTION:In a vapor growth device in which a vapor growth layer is formed on a substrate by introducing raw gas into a reaction chamber and the composition of the vapor growth layer is controlled by the flow-rate ratio of raw gas, at least the first and the second vapor growth material feeding groups 11A and 11B, on which the flow-rate ratio for each raw gas is set in advance, are provided and valves 13A1 and 13B1 are provided on the vapor growth material feeding groups 11A and 11B.
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公开(公告)号：JP2015061193A
公开(公告)日：2015-03-30
申请号：JP2013193376
申请日：2013-09-18
Inventor： TODA ATSUSHI
CPC classification number: G02B27/0025 , G02B3/04 , G02B3/12 , G02B3/14 , G02B13/18 , G02B26/004 , G02B2003/0093 , H01L27/14618 , H01L27/14625 , H01L27/14627 , H01L2924/0002 , H04N5/3572 , H04N2209/047 , H01L2924/00
Abstract: 【課題】シェーディング補正を適切に行えるようにする。【解決手段】光電変換部と、光電変換部に入射する光の角度を補正する補正部であり、光電変換部に光が入射する側に設けられる補正部とを備える。補正部は、曲面を有し、曲面の表面形状は、球面であり、表面形状は、球面の半径、像面の光軸中心から端までの距離、補正部を構成する材料の屈折率、および光の最大入射角度で表される所定の式に基づく形状とされている。本技術は、撮像素子に適用できる。【選択図】図3
Abstract translation: 要解决的问题：正确执行阴影校正。解决方案：一种成像装置，包括：光电转换部分; 以及校正部，用于校正入射到光电转换部的光的角度，校正部设置在光入射到光电转换部的一侧。 校正部具有曲面是球面。 表面的形状基于由球面的半径表示的预定表达，从图像表面的光轴的中心到图像表面的端部的距离，构成校正部分的材料的折射系数 ，和最大入射角光。 该技术可以应用于成像装置。
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公开(公告)号：JP2015037155A
公开(公告)日：2015-02-23
申请号：JP2013168931
申请日：2013-08-15
Inventor： MARUYAMA SHUNSUKE , TODA ATSUSHI
IPC: H01L27/146 , H01L31/10 , H04N5/361 , H04N5/369
CPC classification number: H01L27/1464
Abstract: 【課題】短波長成分の感度の低下およびばらつきを低減することが可能な固体撮像素子およびこれを備えた固体撮像装置を提供する。【解決手段】撮像素子10は、半導体基板11上に光電変換部12が設けられ、この光電変換部12はカルコパイライト系化合物によって形成されており、互いに禁制帯幅の異なるカルコパイライト化合物からなる第1領域12Aおよび第2領域12Bが積層された構成であり、光入射側の第2領域12Bが相対的に広い禁制帯幅を有する。【選択図】図1
Abstract translation: 要解决的问题：提供一种可以减少短波长分量的灵敏度劣化和变化的固态摄像元件; 并提供包括固态图像拾取元件的固态图像拾取装置。解决方案：图像拾取元件10包括设置在半导体基板11上的光电转换部分12.光电转换部分12由基于黄铜矿的化合物形成， 具有由具有禁带宽度彼此不同的黄铜矿化合物构成的第一区域12A和第二区域12B层叠的组成。 光入射侧的第二区域12B具有相对较宽的禁带宽度。
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