公开(公告)号：JPH11145076A

公开(公告)日：1999-05-28

申请号：JP30821197

申请日：1997-11-11

Applicant: SONY CORP

Inventor： NAKAYAMA NORIKAZU ,  MAKINO SAKURAKO

IPC: H01L21/28 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide an ohmic electrode and its forming method which can reduce the heating temperature for ohmic contact, and a laminate for the ohmic electrode. SOLUTION: A first metal layer 11α composed of Pd and a second metal layer 11β composed of alloy of Ge and Au are laminated in order on one surface side of a substrate 20 composed of N-type GaAs, and an N-side electrode 10 is formed by heating at a temperature in the range from at least 175 deg.C to at most 250 deg.C. Excellent ohmic contact is obtained between the substrate 20 and the N-side electrode 10. When the respective layers 21-28 composed of II-VI compound semiconductor are formed on the other surface side of the substrate 20, the N-side electrode 10 can be formed without deteriorating crystallinity of those layers.

公开(公告)号：JPH11204889A

公开(公告)日：1999-07-30

申请号：JP14544198

申请日：1998-05-27

Applicant: SONY CORP

Inventor： TSUKAMOTO HIRONORI ,  TANIGUCHI OSAMU ,  MAKINO SAKURAKO ,  HINO TOMOKIMI ,  FUNATO KENJI

IPC: H01L33/06 ,  H01L33/28 ,  H01L33/32 ,  H01L33/34 ,  H01L33/44 ,  H01S5/00 ,  H01S5/042 ,  H01S5/323 ,  H01S5/343 ,  H01S3/18 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which is markedly enhanced in service life and whose P-side electrode is also elongated in service life. SOLUTION: A semiconductor light emitting device is equipped with a P-type clad layer 9 and P-type contact layers 10, 11, 12, and 13 formed above the clad layer 9 which are each formed like a stripe, wherein the stripe width of a contacting interface between the uppermost P-type contact layer 13 and a P-side electrode 15 is preferably set 1.5 times or above as large as the minimum stripe width of the P-type clad layer 9. The P-type clad layer 9 or the lowermost P-type contact layer 10 is formed like a forward mesa, an inverted mesa, or a rectangle in cross section, an insulating film possessed of a stripe- shaped opening is provided in the P-type clad layer, a P-type contact layer is formed on the insulting film so as to come into contact with the P-type clad layer through the opening, and the stripe width of the P-type contact layer at a contacting interface between the P-type contact layer and the P-side electrode is preferably set 1.5 times or above as large as the minimum stripe width of the opening.

公开(公告)号：JPH11195815A

公开(公告)日：1999-07-21

申请号：JP92098

申请日：1998-01-06

Applicant: SONY CORP

Inventor： TSUKAMOTO HIRONORI ,  HINO TOMOKIMI ,  TANIGUCHI OSAMU ,  TODA ATSUSHI ,  MAKINO SAKURAKO

IPC: H01L33/06 ,  H01L33/14 ,  H01L33/28 ,  H01L33/38 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element for which the operation life can be extended, by restricting deterioration of electrode while electricity is carried, and also provide its production method, optical recording and/or reproducing equipment using such a semiconductor light-emitting element. SOLUTION: In a semiconductor laser having a plurality of II-VI Group compound semiconductor layer laminated on a substrate, when making a wafer- shaped n-type GaAs substrate 1 where the laser construction has been formed into chips, the n-type GaAs substrate 1 is cleaved together with a plurality of II-VI Group compound semiconductor layers, in such a manner that distance L between the stripe portion and the end face 16 parallel to the strip portion becomes larger than the overall thickness (d) of the laser chip, more desirable larger than 3 times the overall thickness (d) of the laser tip, or practically greater than 400 μm. For example, the overall thickness (d) of the laser chip is set at 600 μm, and at this time, the distance L between the stripe portion and the end face 16 is set at 600 μm.

公开(公告)号：JPH10190154A

公开(公告)日：1998-07-21

申请号：JP28972497

申请日：1997-10-22

Applicant: SONY CORP

Inventor： ISHIBASHI AKIRA ,  TANIGUCHI OSAMU ,  HINO TOMOKIMI ,  KOBAYASHI TAKASHI ,  NAKANO KAZUSHI ,  NAKAYAMA NORIKAZU ,  TODA ATSUSHI ,  TSUKAMOTO HIRONORI ,  MAKINO SAKURAKO

IPC: H01L33/06 ,  H01L33/14 ,  H01L33/28 ,  H01L33/30 ,  H01S5/00 ,  H01S3/18 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor light emitting element having excellent characteristics and a long service life, a method for manufactur ing the element, and an optical recording and/or reproducing device using the light element as a light emitting element. SOLUTION: In a semiconductor light emitting element using a II-VI compound semiconductor, at least an active layer 7 is formed to have rugged surfaces and p-type contact layers 11, 12, and 13 are formed to have flat surfaces. The standard deviation of the height of the rugged surfaces of the active layer 7 is adjusted to, for example, about 1-3nm. In addition, the ratio of the intensity of a molecular beam of a group VI element to that of a molecular beam of a group II element is optimized by changing the ratio in accordance with a layer to be grown when clad layers 5 and 9, light guide layers 6 and 8, the active layer 7, the contact layers 11, 12, and 13, etc., are grown manufacturing the semiconductor light emitting element.