公开(公告)号：US20140166977A1

公开(公告)日：2014-06-19

申请号：US14184741

申请日：2014-02-20

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Remigijus Gaska ,  Jinwei Yang

IPC: H01L33/32 ,  H01L33/06

CPC classification number: H01L33/325 ,  H01L33/025 ,  H01L33/04 ,  H01L33/06 ,  H01L33/10 ,  H01L33/14

Abstract: A carbon doped short period superlattice is provided. A heterostructure includes a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers. One or more of the quantum wells and/or the barriers includes a carbon doped layer (e.g., a non-percolated or percolated carbon atomic plane).

Abstract translation: 提供了碳掺杂短周期超晶格。 异质结构包括短周期超晶格，其包括与多个势垒交替的多个量子阱。 量子阱和/或势垒中的一个或多个包括碳掺杂层（例如，非过滤或质子交换的碳原子平面）。

公开(公告)号：US20140077154A1

公开(公告)日：2014-03-20

申请号：US13803753

申请日：2013-03-14

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S Shatalov ,  Remigijus Gaska ,  Jinwei Yang ,  Michael Shur ,  Alexander Dobrinsky

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/06 ,  B82Y10/00 ,  B82Y20/00 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L33/0075 ,  H01L33/04 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/3211 ,  H01S5/3216 ,  H01S5/3407 ,  H01S5/34333

Abstract: A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).

Abstract translation: 提供了一种用于设计和/或制造包括量子阱和相邻屏障的结构的解决方案。 选择量子阱和相邻屏障之间的目标频带不连续性以与量子阱和/或屏障的掺杂剂的活化能一致。 例如，可以选择目标价带不连续性，使得相邻势垒中的掺杂剂的掺杂剂能级与量子阱的价态能带边缘和/或价态能带中的自由载流子的基态能量一致 量子阱。 另外，可以选择量子阱和/或相邻势垒的目标掺杂水平以促进穿过势垒的空穴的实际空间传递。 可以形成量子阱和相邻势垒，使得实际的带不连续性和/或实际掺杂水平对应于相关目标。

公开(公告)号：US20130292638A1

公开(公告)日：2013-11-07

申请号：US13803718

申请日：2013-03-14

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Remigijus Gaska ,  Jinwei Yang ,  Alexander Dobrinsky

IPC: H01L33/06

CPC classification number: H01L33/06 ,  H01L33/0045 ,  H01L33/32

Abstract: A superlattice layer including a plurality of periods, each of which is formed from a plurality of sub-layers is provided. Each sub-layer comprises a different composition than the adjacent sub-layer(s) and comprises a polarization that is opposite a polarization of the adjacent sub-layer(s). In this manner, the polarizations of the respective adjacent sub-layers compensate for one another. Furthermore, the superlattice layer can be configured to be at least partially transparent to radiation, such as ultraviolet radiation.

公开(公告)号：US20130078411A1

公开(公告)日：2013-03-28

申请号：US13624162

申请日：2012-09-21

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： Remigijus Gaska ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Jinwei Yang ,  Michael Shur

IPC: B32B9/00 ,  C09K11/08 ,  C09D201/04 ,  C09D163/00 ,  C08K3/28 ,  C08K3/38 ,  C09D5/00 ,  B32B7/00 ,  C08K3/40 ,  B82Y30/00

CPC classification number: C09D163/00 ,  C09K11/02 ,  C09K11/08 ,  H01L33/56 ,  Y10T428/23

Abstract: A composite material, which can be used as an encapsulant for an ultraviolet device, is provided. The composite material includes a matrix material and at least one filler material incorporated in the matrix material that are both at least partially transparent to ultraviolet radiation of a target wavelength. The filler material includes microparticles and/or nanoparticles and can have a thermal coefficient of expansion significantly smaller than a thermal coefficient of expansion of the matrix material for relevant atmospheric conditions. The relevant atmospheric conditions can include a temperature and a pressure present during each of: a curing and a cool down process for fabrication of a device package including the composite material and normal operation of the ultraviolet device within the device package.

Abstract translation: 提供了可用作紫外线装置的密封剂的复合材料。 复合材料包括基体材料和掺入基质材料中的至少部分对目标波长的紫外线辐射部分透明的填料。 填充材料包括微粒和/或纳米颗粒，并且可以具有明显小于相关大气条件下的基质材料的热膨胀系数的热膨胀系数。 相关的大气条件可以包括以下各项中存在的温度和压力：用于制造包括复合材料的器件封装的固化和冷却过程以及器件封装内的紫外线器件的正常操作。

公开(公告)号：US10923623B2

公开(公告)日：2021-02-16

申请号：US16299362

申请日：2019-03-12

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Rakesh Jain ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Jinwei Yang ,  Remigijus Gaska ,  Mikhail Gaevski

IPC: H01L33/06 ,  H01L33/18 ,  H01L33/38 ,  H01L33/00 ,  H01S5/022 ,  H01S5/343 ,  H01L33/30 ,  H01S5/32 ,  H01S5/34

Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.

公开(公告)号：US10535793B2

公开(公告)日：2020-01-14

申请号：US15602677

申请日：2017-05-23

Applicant: Sensor Electronic Technology, Inc.

Inventor： Rakesh Jain ,  Maxim S. Shatalov ,  Jinwei Yang ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/00 ,  H01L33/04 ,  H01L33/32 ,  H01L33/06 ,  H01L33/12 ,  H01L33/14

Abstract: Heterostructures for use in optoelectronic devices are described. One or more parameters of the heterostructure can be configured to improve the reliability of the corresponding optoelectronic device. The materials used to create the active structure of the device can be considered in configuring various parameters the n-type and/or p-type sides of the heterostructure.

公开(公告)号：US10276749B2

公开(公告)日：2019-04-30

申请号：US15706990

申请日：2017-09-18

Applicant: Sensor Electronic Technology, Inc.

Inventor： Remigijus Gaska ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Jinwei Yang ,  Michael Shur ,  Grigory Simin

IPC: H01L33/22 ,  H01L23/00 ,  H01L29/15 ,  H01L33/38 ,  H01L21/02 ,  H01L33/30 ,  H01L33/32

Abstract: A device including a first semiconductor layer and a contact to the first semiconductor layer is disclosed. An interface between the first semiconductor layer and the contact includes a first roughness profile having a characteristic height and a characteristic width. The characteristic height can correspond to an average vertical distance between crests and adjacent valleys in the first roughness profile. The characteristic width can correspond to an average lateral distance between the crests and adjacent valleys in the first roughness profile.

公开(公告)号：US10199537B2

公开(公告)日：2019-02-05

申请号：US15856920

申请日：2017-12-28

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Jinwei Yang ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/02 ,  H01L33/62 ,  H01L33/12 ,  H01L33/32 ,  H01L33/06 ,  H01L33/46 ,  H01L33/00 ,  C30B29/40 ,  G06F17/50 ,  H01L33/14 ,  H01L33/40

Abstract: A semiconductor structure comprising a buffer structure and a set of semiconductor layers formed adjacent to a first side of the buffer structure is provided. The buffer structure can have an effective lattice constant and a thickness such that an overall stress in the set of semiconductor layers at room temperature is compressive and is in a range between approximately 0.1 GPa and 2.0 GPa. The buffer structure can be grown using a set of growth parameters selected to achieve the target effective lattice constant a, control stresses present during growth of the buffer structure, and/or control stresses present after the semiconductor structure has cooled.

公开(公告)号：US10186632B2

公开(公告)日：2019-01-22

申请号：US15645363

申请日：2017-07-10

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Remigijus Gaska ,  Jinwei Yang ,  Alexander Dobrinsky

IPC: H01L33/02 ,  H01L33/04 ,  H01L33/10 ,  H01L33/14 ,  H01L33/06 ,  H01L33/32

Abstract: A carbon doped short period superlattice is provided. A heterostructure includes a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers. One or more of the quantum wells and/or the barriers includes a carbon doped layer (e.g., a non-percolated or percolated carbon atomic plane).

公开(公告)号：US10164147B2

公开(公告)日：2018-12-25

申请号：US15662675

申请日：2017-07-28

Applicant: Sensor Electronic Technology, Inc.

Inventor： Wenhong Sun ,  Alexander Dobrinsky ,  Maxim S. Shatalov ,  Jinwei Yang ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/04 ,  H01L21/02

Abstract: A light emitting heterostructure including one or more fine structure regions is provided. The light emitting heterostructure can include a plurality of barriers alternating with a plurality of quantum wells. One or more of the barriers and/or quantum wells includes a fine structure region. The fine structure region includes a plurality of subscale features arranged in at least one of: a growth or a lateral direction.