公开(公告)号：US08264054B2

公开(公告)日：2012-09-11

申请号：US10291125

申请日：2002-11-08

Applicant: Shawn Jay Cunningham ,  Dana Richard DeReus ,  Subham Sett ,  John Richard Gilbert

Inventor： Shawn Jay Cunningham ,  Dana Richard DeReus ,  Subham Sett ,  John Richard Gilbert

IPC: H01L31/058

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: MEMS Device having Electrothermal Actuation and Release and Method for Fabricating. According to one embodiment, a microscale switch is provided and can include a substrate and a stationary electrode and stationary contact formed on the substrate. The switch can further include a movable microcomponent suspended above the substrate. The microcomponent can include a structural layer including at least one end fixed with respect to the substrate. The microcomponent can further include a movable electrode spaced from the stationary electrode and a movable contact spaced from the stationary electrode. The microcomponent can include an electrothermal component attached to the structural layer and operable to produce heating for generating force for moving the structural layer.

Abstract translation: 具有电热驱动和释放的MEMS器件和制造方法。 根据一个实施例，提供微型开关，并且可以包括形成在基板上的基板和固定电极和固定触点。 开关还可以包括悬浮在基板上方的可移动的微型部件。 微组件可以包括包括相对于基底固定的至少一个端部的结构层。 微型部件还可以包括与固定电极间隔开的可动电极和与固定电极间隔开的可动触头。 微组件可以包括附接到结构层的电热组件，并且可操作以产生用于产生用于移动结构层的力的加热。

公开(公告)号：US20110308957A1

公开(公告)日：2011-12-22

申请号：US13164305

申请日：2011-06-20

Applicant: Heiko Specht ,  Andreas Reisinger ,  Ulrich Hausch ,  Frank Krueger ,  Jens Troetzschel

Inventor： Heiko Specht ,  Andreas Reisinger ,  Ulrich Hausch ,  Frank Krueger ,  Jens Troetzschel

IPC: C23C28/02 ,  C23C28/00

CPC classification number: C23C28/023 ,  B81C1/00619 ,  B81C2201/0107 ,  B81C2201/0181

Abstract: One aspect is a method for the production of a three-dimensional structure of successive layers producing a multitude of successive layers wherein, with the exception of a first layer, each of the successive layers is arranged on a preceding layer. Each of the successive layers includes at least two materials wherein one material is a sacrificial material and one material is a structure material. Each of the successive layers defines a successive cross-section through the three-dimensional structure. Producing each of the layers includes depositing the sacrificial material by means of an electrochemical process and depositing the structure material by means of physical gas phase deposition. After a multitude of successive layers has been produced, the three-dimensional structure is uncovered by removing at least a part of the sacrificial material. The sacrificial material is at least one of a group consisting of nickel, silver, palladium, and gold.

Abstract translation: 一个方面是制造连续层的产生多个连续层的三维结构的方法，其中除了第一层之外，每个连续层被布置在前一层上。 每个连续层包括至少两种材料，其中一种材料是牺牲材料，一种材料是结构材料。 每个连续的层限定通过三维结构的连续横截面。 生产每个层包括通过电化学方法沉积牺牲材料并通过物理气相沉积沉积结构材料。 在已经生产了多个连续层之后，通过去除至少一部分牺牲材料来覆盖三维结构。 牺牲材料是由镍，银，钯和金组成的组中的至少一种。

公开(公告)号：US07960200B2

公开(公告)日：2011-06-14

申请号：US11789578

申请日：2007-04-24

Applicant: Guillaume Bouche ,  Ralph N. Wall

Inventor： Guillaume Bouche ,  Ralph N. Wall

IPC: H01L21/00

CPC classification number: B81C1/0015 ,  B81B2201/014 ,  B81B2203/0384 ,  B81C1/00333 ,  B81C2201/0107 ,  B81C2201/0157 ,  B81C2203/0118

Abstract: In accordance with the present invention, accurate and easily controlled sloped walls may be formed using AlN and preferably a heated TMAH for such purpose as the fabrication of MEMS devices, wafer level packaging and fabrication of fluidic devices. Various embodiments are disclosed.

Abstract translation: 根据本发明，可以使用AlN和优选加热的TMAH来形成精确且易于控制的倾斜壁，用于MEMS器件的制造，晶片级封装和流体器件的制造。 公开了各种实施例。

公开(公告)号：US20110051224A1

公开(公告)日：2011-03-03

申请号：US12939909

申请日：2010-11-04

Applicant: James Randolph Webster ,  Thanh Nghia Tu ,  Xiaoming Yan ,  Wonsuk Chung

Inventor： James Randolph Webster ,  Thanh Nghia Tu ,  Xiaoming Yan ,  Wonsuk Chung

IPC: G02B26/00

CPC classification number: B81B3/0008 ,  B81B2201/042 ,  B81C2201/0107 ,  B81C2201/0109 ,  B81C2201/115 ,  G02B26/001 ,  Y10T428/24917

Abstract: Methods of fabricating an electromechanical systems device that mitigate permanent adhesion, or stiction, of the moveable components of the device are provided. The methods provide an amorphous silicon sacrificial layer with improved and reproducible surface roughness. The amorphous silicon sacrificial layers further exhibit excellent adhesion to common materials used in electromechanical systems devices.

Abstract translation: 提供了减轻设备的可移动部件的永久性粘附或静电的机电系统装置的制造方法。 该方法提供了具有改进和可再现的表面粗糙度的非晶硅牺牲层。 非晶硅牺牲层对于机电系统器件中常用的材料进一步表现出优异的附着性。

公开(公告)号：US20090305010A1

公开(公告)日：2009-12-10

申请号：US12133813

申请日：2008-06-05

Applicant: James Randolph Webster ,  Thanh Nghia Tu ,  Xiaoming Yan ,  Wonsuk Chung

Inventor： James Randolph Webster ,  Thanh Nghia Tu ,  Xiaoming Yan ,  Wonsuk Chung

IPC: B05D5/06 ,  H05H1/24 ,  B32B3/00

CPC classification number: B81B3/0008 ,  B81B2201/042 ,  B81C2201/0107 ,  B81C2201/0109 ,  B81C2201/115 ,  G02B26/001 ,  Y10T428/24917

Abstract: Methods of fabricating an electromechanical systems device that mitigate permanent adhesion, or stiction, of the moveable components of the device are provided. The methods provide an amorphous silicon sacrificial layer with improved and reproducible surface roughness. The amorphous silicon sacrificial layers further exhibit excellent adhesion to common materials used in electromechanical systems devices.

Abstract translation: 提供了减轻设备的可移动部件的永久性粘附或静电的机电系统装置的制造方法。 该方法提供了具有改进和可再现的表面粗糙度的非晶硅牺牲层。 非晶硅牺牲层对于机电系统器件中常用的材料进一步表现出优异的附着性。

公开(公告)号：US20090137113A1

公开(公告)日：2009-05-28

申请号：US11946831

申请日：2007-11-28

Applicant: Sheng Hung Li ,  Siew-Seong Tan ,  Cheng-Yen Liu ,  Li-Ken Yeh

Inventor： Sheng Hung Li ,  Siew-Seong Tan ,  Cheng-Yen Liu ,  Li-Ken Yeh

IPC: H01L21/4763

CPC classification number: B81C1/00801 ,  B81C2201/0107 ,  B81C2201/014

Abstract: A method for fabricating a microstructure is to form at least one insulation layer including a micro-electro-mechanical structure therein over an upper surface of a silicon substrate. The micro-electro-mechanical structure includes at least one microstructure and a metal sacrificial structure that are independent with each other. In the metal sacrificial structure are formed a plurality of metal layers and a plurality of metal via layers connected to the respective metal layers. A barrier layer is formed over an upper surface of the insulation layer, and an etching stop layer is subsequently formed over a lower surface of the silicon substrate. An etching operation is carried out from the lower surface of the silicon substrate to form a space corresponding to the micro-electro-mechanical structure, and then the metal sacrificial structure is etched, thus achieving a microstructure suspension.

Abstract translation: 用于制造微结构的方法是在硅衬底的上表面上形成包括微​​电子机械结构的至少一个绝缘层。 微电子机械结构包括彼此独立的至少一个微结构和金属牺牲结构。 在金属牺牲结构中形成多个金属层和连接到各个金属层的多个金属通孔层。 在绝缘层的上表面上形成阻挡层，随后在硅衬底的下表面上形成蚀刻停止层。 从硅衬底的下表面进行蚀刻操作以形成与微电子机械结构相对应的空间，然后蚀刻金属牺牲结构，从而实现微结构悬浮。

公开(公告)号：US20050230839A1

公开(公告)日：2005-10-20

申请号：US11149921

申请日：2005-06-10

Applicant: Michel Despont ,  Roy Magnuson ,  Ute Drechsler

Inventor： Michel Despont ,  Roy Magnuson ,  Ute Drechsler

IPC: B81B3/00 ,  B81C1/00 ,  C23F13/14 ,  H01L21/306 ,  H01L21/336

CPC classification number: H01L21/30604 ,  B81B2201/12 ,  B81B2203/0118 ,  B81C1/00801 ,  B81C2201/0107 ,  B81C2201/0114 ,  B81C2201/0133 ,  C23F13/14

Abstract: A method for protecting a material of a microstructure comprising the material and a noble metal layer against undesired galvanic etching during manufacture, the method comprises forming on the structure a sacrificial metal layer having a lower redox potential than the material, the sacrificial metal layer being electrically connected to the noble metal layer.

Abstract translation: 一种用于在制造期间保护包含该材料的微结构材料和贵金属层以防止不期望的电化学蚀刻的方法，所述方法包括在所述结构上形成具有比所述材料更低的氧化还原电位的牺牲金属层，所述牺牲金属层是电 连接到贵金属层。

公开(公告)号：US06949397B2

公开(公告)日：2005-09-27

申请号：US10466516

申请日：2002-01-11

Applicant: Michel Despont ,  Roy H. Magnuson ,  Ute Drechsler

Inventor： Michel Despont ,  Roy H. Magnuson ,  Ute Drechsler

IPC: B81B3/00 ,  B81C1/00 ,  C23F13/14 ,  H01L21/306 ,  H01L21/00

CPC classification number: H01L21/30604 ,  B81B2201/12 ,  B81B2203/0118 ,  B81C1/00801 ,  B81C2201/0107 ,  B81C2201/0114 ,  B81C2201/0133 ,  C23F13/14

Abstract: A method for protecting a material of a microstructure comprising said material and a noble metal layer against undesired galvanic etching during manufacture comprises forming on the structure a sacrificial metal layer having a lower redox potential than said material, the sacrificial metal layer being electrically connected to said noble metal layer.

Abstract translation: 一种用于在制造过程中保护包含所述材料的微结构材料和贵金属层以防止不期望的电镀蚀刻的方法包括在所述结构上形成具有比所述材料更低的氧化还原电位的牺牲金属层，所述牺牲金属层电连接到所述 贵金属层。

公开(公告)号：US20050194348A1

公开(公告)日：2005-09-08

申请号：US11029181

申请日：2005-01-03

Applicant: Adam Cohen ,  Gang Zhang ,  Fan-Gang Tseng

Inventor： Adam Cohen ,  Gang Zhang ,  Fan-Gang Tseng

IPC: B81B3/00 ,  G01P15/08 ,  G01P15/125 ,  H01P1/202 ,  H01P3/06 ,  H01P5/18 ,  H01P11/00 ,  H05K3/46 ,  B44C1/22 ,  C25F3/00

CPC classification number: B81C1/00611 ,  B81B2201/042 ,  B81C1/00126 ,  B81C2201/0107 ,  B81C2201/0122 ,  B81C2201/056 ,  G01P15/0802 ,  G01P15/125 ,  H01P1/202 ,  H01P3/06 ,  H01P5/183 ,  H01P11/00 ,  H01P11/005 ,  H01P11/007 ,  H05K3/4647 ,  Y10T29/49155

Abstract: Various embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer. In other embodiments, electrochemically fabricated structures are formed on dielectric substrates.

Abstract translation: 各种实施方案涉及使用至少一种导电结构材料，至少一种导电牺牲材料和至少一种介电材料形成的多层中尺度或微结构结构的电化学制造。 在一些实施方案中，电介质材料是可UV固化的光聚合物。 在其它实施例中，在电介质基底上形成电化学制造的结构。

公开(公告)号：US06821901B2

公开(公告)日：2004-11-23

申请号：US10084622

申请日：2002-02-28

Applicant: Seung-jin Song ,  Kyoungdoug Min ,  Young-chang Joo ,  Hong-seok Min ,  Sejun Kim ,  Kun-joong Park

Inventor： Seung-jin Song ,  Kyoungdoug Min ,  Young-chang Joo ,  Hong-seok Min ,  Sejun Kim ,  Kun-joong Park

IPC: H01L21311

CPC classification number: B81C1/00087 ,  B81C2201/0107 ,  B81C2201/0112 ,  B81C2201/0132 ,  H01L21/3081 ,  H01L21/32134

Abstract: A method of through-etching a substrate that is simplified and by which the flow of ions can be kept to be regular during a plasma dry etching process, is provided. According to this method, a buffer layer is formed on a first plane of the substrate, a metal layer is formed on the buffer layer, an etching mask pattern is formed on a second plane opposite to the first plane, and the substrate is through-etched with the etching mask pattern as an etching mask. Preferably, the substrate is formed of a single-crystal silicon, the buffer layer is formed of silicon dioxide, and the metal layer is formed of aluminum.

Abstract translation: 提供了一种通过蚀刻简化的衬底的方法，并且通过该方法可以在等离子体干蚀刻工艺期间将离子流保持为规则的方法。 根据该方法，在基板的第一平面上形成缓冲层，在缓冲层上形成金属层，在与第一平面相反的第二平面上形成蚀刻掩模图案， 用蚀刻掩模图案蚀刻作为蚀刻掩模。 优选地，基板由单晶硅形成，缓冲层由二氧化硅形成，金属层由铝形成。