Abstract:
An infrared detector includes a circuit block carrying an infrared sensor element and electronic components. The circuit block is composed of a dielectric resin layer and a first substrate formed with a circuit pattern and mounting the electronic components. The dielectric resin layer is formed in its top with a recess which defines around its periphery with a shoulder for supporting opposite ends of the infrared sensor. The first substrate is integrated to the lower end of the dielectric resin layer with at least one of the electronic components being molded into the dielectric resin layer to make the circuit block of a unified mold structure. Thus, a part or all of the electronic components are molded into the dielectric layer to realize the circuit block of a simple and low profile structure, while retaining an advantage of keeping the infrared sensor element sufficiently away from the electronic components and an associated electronic circuit, thereby assuring to give the infrared detector which is simple in construction, economical in cost, and reliable in the infrared detection.
Abstract:
Beschrieben wird ein Sonnensensor für ein Kraftfahrzeug mit einer von der Einstrahlungsrichtung abhängigen Empfindlichkeit, mit einem Strahlungsempfänger und einem vor dem Eintrittsfenster des Strahlungsempfängers angeordneten optischen Körper, wobei der optische Körper eine Facettenstruktur aufweist.
Abstract:
The invention relates to a radiation sensor device comprising a housing, a radiation sensor secured with respect to a first portion of the housing and a heat pipe in thermal communication with the first portion of the housing, the heat pipe being configured to transfer heat from portion of the house to a second portion of the housing remote from the first portion of the housing. The heat pipe may be used advantageously to transport or transfer heat away from the sensor components of the device to an area remote therefrom. The heat pipe can be used to transfer heat at a rate that is thousands of times higher than copper. The radiation sensor device may be used in an ultraviolet radiation fluid treatment system such as an ultraviolet radiation water disinfection system.
Abstract:
Die Erfindung betrifft ein Sensorbauteil (1) und einen Nutzen zu seiner Herstellung. Das Sensorbauteil (1) weist neben einem Sensorchip (2) mit einem Sensorbereich (3) eine Rückseite (7) und passive Bauteile (19) auf. Diese sind gemeinsam in eine Kunststoffmasse (31) eingebettet, in der Weise, dass ihre jeweiligen Elektroden von einer Gesamtoberseite (13) einer Kunststoffplatte (6) aus verdrahtet werden können.
Abstract:
Methods and apparatus for monitoring the power level of a multi-wavelength optical signal are provided, making use of a light detector comprising a first and a second absorbing layer having both the same conductivity type, and intermediate layer of a second conductivity type and means for providing an indication of a change in power of the first and/or the second wavelength of light as measured by the respective absorbing layers. Also provided are methods and apparatus for adjusting the power level of selected optical emitters to compensate for the changes in power levels. An optoelectronic transmitter for receiving electrical input signals and transmitting corresponding optical output signals in a common light beam comprises electrical modulators, optoelectronic emitters, an optical combiner, an optoelectronic detector, means for separating the signals detected by the detector, and means for adjusting the power of the optoelectronic emitters.
Abstract:
A method of monitoring a propagation light propagating through each waveguide in an array waveguide device. Problems with picking up a monitor light in a waveguide substrate and receiving it are resolved in the following ways. A waveguide type directional coupler is formed in a space between array waveguides, part of a propagation light is picked up as a monitor light, a recessed portion is provided at the end of a waveguide continuous from the directional coupler to allow the monitor light to be output to this recessed portion and to be reflected to the upper or lower portion of the substrate by means of an optical path conversion element mounted in the recessed portion, and then it is received at a photodiode. The optical path conversion element is obtained by inserting a metal block into the recessed portion and then molding it in a mold.
Abstract:
A radiant energy detector comprising a silicon photovoltaic detector (24) and a lead sulfide photoconductive detector (22) in a common optical path and each responsive to radiant energy in different wavelength intervals. The silicon detector (24) also serves as a filter for isolating the wavelengths of radiant energy reaching the lead sulfide detector (22).
Abstract:
A measurement wafer device for measuring radiation intensity and temperature includes a wafer assembly including one or more cavities. The measurement wafer device further includes a detector assembly. The detector assembly is disposed within the one or more cavities of the wafer assembly. The detector assembly includes one or more light sensors. The detector assembly is further configured to perform a direct or indirect measurement of the intensity of ultraviolet light incident on a surface of the wafer assembly. The detector assembly is further configured to determine a temperature of one or more portions of the wafer assembly based on one or more characteristics of the one or more light sensors.