Abstract:
A light source that includes first and second waveguides and a passive resonator for coupling light between the waveguides. The waveguides include a gain region for amplifying light of a desired wavelength, a transparent region, and an absorption region. The passive resonator couples light of the desired wavelength between the first and second transparent regions of the first and second waveguides and has a resonance at that wavelength. The resonator is preferably a microdisk resonator. The index of refraction of the microdisk resonator can be altered to select the desired wavelength. A second microdisk resonator having a different radius may be incorporated to increase the tuning range of the light source. The resonator is preferably constructed over the waveguides with an air gap between the resonator and the substrate in which the waveguides are constructed.
Abstract:
A band discontinuity reduction layer having a band gap energy larger than that of that of an MQW (multiple quantum well) absorption layer and smaller than that of a p-InP clad layer is provided between the MQW absorption layer and the p-InP clad layer. In addition, a band discontinuity reduction layer having a band gap energy larger than that of the MQW absorption layer and smaller than that of an n-InP clad layer is provided between the MQW absorption layer and the n-InP clad layer. Consequently, as a pile-up of carriers is suppressed, a semiconductor light modulator with an enhanced response speed can be obtained.
Abstract:
A waveguide optical semiconductor device, a method of fabricating the same and an optical device module. The semiconductor device includes a substrate, a waveguide formed on the substrate, an electrode layer formed on the waveguide, and bumpers formed on the substrate. The bumpers are disposed on both side of the waveguide, and top surfaces of the bumpers are higher than a top surface of the electrode layer. The method of fabrication includes forming semiconductor layers for waveguide on a substrate, forming another semiconductor layer on the semiconductor layers, removing the another semiconductor layer and at least a part of the semiconductor layers selectively so that grooves are formed on both side of a region where the waveguide are expected to be formed, removing the another semiconductor layer at the region, remained portions of the another semiconductor layer form bumpers. The module includes a waveguide optical semiconductor device having bumpers disposed on both side of the waveguide, and a carrier having a mounting region in contact with the top surfaces of the bumpers.
Abstract:
A light modulator having a reduced parasitic static capacitance includes a semiconductor substrate having a mesa section and a bonding pad section. A primary insulating film on the substrate continuously covers the mesa section and the bonding pad section. After a mask has been formed on a portion of the primary insulating film opposite the bonding pad section, the remaining portion of the primary insulating film is etched, followed by removal of the mask. After the removal of the mask, a second insulating film is formed continuously covering the primary insulating film opposite the bonding pad section and the mesa section so that a relatively thick insulating layer is present only opposite the bonding pad section.
Abstract:
A grating optical switch has at least one switch region for ON-OFF switch control of a signal light transmission and a signal light reflection, at least one input/output optical waveguide region for guiding the signal light to the switch, at least one coupler region for coupling the control light colinearly to the signal light and for guiding the control light to the switch region together with the signal light, and at least one separator region for separating the signal light and the control light. The switch region transmits the signal light when the control light is coupled while reflecting the signal light when the control light is not coupled.
Abstract:
An optical switch having a plurality of channel waveguides. At least one of which is a gain-guided channel waveguide. In operation, a light beam incident on one end face of the optical switch through one of the channel waveguides exits from the switch through one or another of the channel waveguides in accordance with current injected into the gain-guided channel waveguide. As a result, a compact low-voltage optical switch is possible. The channel waveguides may run parallel to each other, or may come together in a center portion in a X-shape, separated by a relatively small distance, or as a third alternative may be formed in a Y-shape, with a small distance separating the branches of said Y-shape.
Abstract:
A structure and a corresponding method for producing a permanent electric biasing field in an electrooptical device. Electrodes are embedded in an insulating layer formed over the device, which includes a substrate of electrooptical material and an optical waveguide formed in the substrate. The electrodes are electrostatically charged and encapsulated in the insulating layer, to produce the desired electric field without the need for an external voltage source.
Abstract:
An electroabsorption modulator comprises an absorption layer (7) between at least one layer of p-doped semiconductor (6) and at least one layer of n-doped semiconductor (8). The layers form a ridge waveguide structure. The thickness of the absorption layer is between 9 and 60 nm and the width of the ridge is between 4.5 and 12 microns.
Abstract:
A semiconductor optical device includes a mesa stripe (22) having a layer structure, a pair of current blocking layers (24) which abut and cover respective sides of the mesa stripe (22), a pair of Al-oxidized passivation layers (42) each covering one of the current blocking layers (24), a p-side electrode (30) in contact with the top surface of the mesa stripe (22) through the opening (46) formed between the Al-oxidized layers (42).