System und Verfahren zum transversalen Pumpen eines lasergestützten Plasmas

    公开(公告)号:DE112015001623T5

    公开(公告)日:2017-02-09

    申请号:DE112015001623

    申请日:2015-04-01

    Abstract: Eine lasergestützte Plasmalichtquelle zum transversalen Plasmapumpen beinhaltet eine Pumpquelle, die dazu ausgebildet ist, Pumpbeleuchtung zu erzeugen, eines oder mehrere optische Elemente zur Beleuchtung und eine Gaseinschlussstruktur, welche dazu ausgebildet ist, ein Gasvolumen einzuschließen. Das eine oder die mehreren optischen Elemente zur Beleuchtung sind dazu ausgebildet, ein Plasma innerhalb des Gasvolumens der Gaseinschlussstruktur aufrechtzuerhalten, indem sie Pumpbeleuchtung entlang eines Pumpstrahlengangs zu einem oder mehreren Brennflecken innerhalb des Gasvolumens richten. Das eine oder die mehreren optischen Sammelelemente sind dazu ausgebildet, vom Plasma emittierte Breitbandstrahlung entlang eines Sammelstrahlengangs zu sammeln. Ferner sind die optischen Elemente zur Beleuchtung dazu ausgebildet, den Pumpstrahlengang derart festzulegen, dass Pumpbeleuchtung entlang einer Richtung transversal zu einer Fortpflanzungsrichtung des emittierten Breitbandlichts des Sammelstrahlengangs auf das Plasma trifft, so dass die Pumpbeleuchtung im Wesentlichen von der emittierten Breitbandstrahlung entkoppelt ist.

    93.
    发明专利
    未知

    公开(公告)号:DE69829077T2

    公开(公告)日:2006-01-12

    申请号:DE69829077

    申请日:1998-12-22

    Abstract: In a gas discharge tube in which a sealed envelope at least a part of which transmits light is filled with a gas, and electric discharge is generated between anode and cathode sections disposed within the sealed envelope, so as to emit predetermined light outside from the light-transmitting part of the sealed envelope, the anode section is mounted on an insulating anode support member, an insulating electrode support member having an opening for exposing the anode section is mounted on a surface surrounding the anode section, a focusing electrode having a focusing opening projecting toward the anode section is further mounted at the front face of the opening, and the cathode section is disposed on the anode support member or focusing electrode support member so as to be spaced from the focusing opening.

    94.
    发明专利
    未知

    公开(公告)号:DE69825482T2

    公开(公告)日:2005-08-18

    申请号:DE69825482

    申请日:1998-12-22

    Abstract: In a gas discharge tube 1 in accordance with the present invention, one or both of the inner wall face 22A and outer wall face 22B of a side tube body 22 are provided with a coating 21 made of a glass material or ceramics. As a result, the side tube body 22 can be made of various materials regardless of properties of the gas filling the inside, whereby the gas discharge tube 1 can have a wider range of processed forms and smaller dimensions at the same time, and its mass production can freely be carried out.

    95.
    发明专利
    未知

    公开(公告)号:DE69911012T2

    公开(公告)日:2004-06-17

    申请号:DE69911012

    申请日:1999-06-11

    Abstract: A planar electron emitter, based on the existence of quasi-ballistic transport of electrons is disclosed. In its preferred embodiment the planar electron emitter structure consists of a body of finite gap pure semiconductor or insulator, the said body of macroscopic thickness (~1 mm) being terminated by two parallel surfaces and of a set of two electrodes deposited/grown on the said two free surfaces such that when a low external electrical field (~100 V/cm) is applied to this structure, consisting of two electrodes and the said semiconductor or insulating body sandwiched between them, a large fraction of electrons injected into the said semiconductor or insulator body from the negatively charged electrode (cathode) is quasi-ballistic in nature, that is this fraction of injected electrons is accelerated within the said semiconductor or insulator body without suffering any appreciable inelastic energy losses, thereby achieving sufficient energy and appropriate momentum at the positively charged electrode (anode) to be able to traverse through the said anode and to escape from the said structure into empty space (vacuum), said semiconductor or insulator body comprises a material or material system having a predetermined crystal orientation.

    96.
    发明专利
    未知

    公开(公告)号:DE69911012D1

    公开(公告)日:2003-10-09

    申请号:DE69911012

    申请日:1999-06-11

    Abstract: A planar electron emitter, based on the existence of quasi-ballistic transport of electrons is disclosed. In its preferred embodiment the planar electron emitter structure consists of a body of finite gap pure semiconductor or insulator, the said body of macroscopic thickness (~1 mm) being terminated by two parallel surfaces and of a set of two electrodes deposited/grown on the said two free surfaces such that when a low external electrical field (~100 V/cm) is applied to this structure, consisting of two electrodes and the said semiconductor or insulating body sandwiched between them, a large fraction of electrons injected into the said semiconductor or insulator body from the negatively charged electrode (cathode) is quasi-ballistic in nature, that is this fraction of injected electrons is accelerated within the said semiconductor or insulator body without suffering any appreciable inelastic energy losses, thereby achieving sufficient energy and appropriate momentum at the positively charged electrode (anode) to be able to traverse through the said anode and to escape from the said structure into empty space (vacuum), said semiconductor or insulator body comprises a material or material system having a predetermined crystal orientation.

    97.
    发明专利
    未知

    公开(公告)号:DE10209642A1

    公开(公告)日:2003-09-18

    申请号:DE10209642

    申请日:2002-03-05

    Inventor: KRAUS ALBRECHT

    Abstract: A light source has a discharge vessel which is filled with a filling gas, and an electron beam source which is arranged in vacuum or in a region of low pressure. The electron beam source generates electrons which are propelled through an entry foil into the discharge vessel. An electric field may be generated inside the discharge vessel.

    98.
    发明专利
    未知

    公开(公告)号:DE69816484D1

    公开(公告)日:2003-08-21

    申请号:DE69816484

    申请日:1998-12-22

    Abstract: In the gas discharge tube of the present invention, for elongating the life of the discharge tube 1 itself while lowering the assembling temperature, a side tube 14 itself is formed from glass, and a metal is employed in a joint between a stem 4 and the side tube 14. Namely, a metal-made first peripheral portion 15 provided in the stem 4 and a metal-made second peripheral portion 16 provided in the side tube 14 are utilized in the joint. As a result, the discharge tube 1 itself can be made smaller.

    99.
    发明专利
    未知

    公开(公告)号:SE0104162L

    公开(公告)日:2003-06-12

    申请号:SE0104162

    申请日:2001-12-11

    Applicant: LIGHTLAB AB

    Inventor: FRANCKE TOM

    Abstract: An arrangement for emitting light includes a hermetically sealed casing with a window, a layer of a fluorescent substance arranged within the casing covering at least a major part of the window, an electron emitting cathode arranged within the casing, and an anode. The casing is filled with a gas suitable for electron avalanche amplification. In operation, the cathode and anode are held at an electric potential such that said emitted electrons are accelerated and avalanche amplified in the gas. The layer of the fluorescent substance is arranged to emit light through the window in response to avalanche amplified electron bombardment and/or ultraviolet light emitted from the gas.

    Planar electron emitter (PEE)
    100.
    发明专利

    公开(公告)号:AU755927B2

    公开(公告)日:2003-01-02

    申请号:AU4358999

    申请日:1999-06-11

    Abstract: A planar electron emitter, based on the existence of quasi-ballistic transport of electrons is disclosed. In its preferred embodiment the planar electron emitter structure consists of a body of finite gap pure semiconductor or insulator, the said body of macroscopic thickness (~1 mm) being terminated by two parallel surfaces and of a set of two electrodes deposited/grown on the said two free surfaces such that when a low external electrical field (~100 V/cm) is applied to this structure, consisting of two electrodes and the said semiconductor or insulating body sandwiched between them, a large fraction of electrons injected into the said semiconductor or insulator body from the negatively charged electrode (cathode) is quasi-ballistic in nature, that is this fraction of injected electrons is accelerated within the said semiconductor or insulator body without suffering any appreciable inelastic energy losses, thereby achieving sufficient energy and appropriate momentum at the positively charged electrode (anode) to be able to traverse through the said anode and to escape from the said structure into empty space (vacuum), said semiconductor or insulator body comprises a material or material system having a predetermined crystal orientation.

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