公开(公告)号：WO2007117989A3

公开(公告)日：2008-01-10

申请号：PCT/US2007065015

申请日：2007-03-27

Applicant: TOKYO ELECTRON LTD ,  TOKYO ELECTRON AMERICA INC ,  CLARK ROBERT D

Inventor： CLARK ROBERT D

IPC: H01L21/314 ,  C23C16/30 ,  C23C16/448 ,  C23C16/455 ,  C23C28/02

CPC classification number: C23C16/308 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/5096 ,  H01L21/3141 ,  H01L21/3142 ,  H01L21/3145 ,  H01L21/318

Abstract: A method is provided for depositing a gate dielectric that includes at least two rare earth, metal elements in the form of an oxynitride or an aluminum oxynitride. The method includes disposing a substrate (25, 92) in a process chamber (10) and exposing the substrate (25, 92) to a gas pulse containing a first rare earth precursor and to a gas pulse containing a second rare earth precursor. The substrate (25, 92) may also optionally be exposed to a gas pulse containing an aluminum precursor. Sequentially after each precursor gas pulse, the substrate (25, 92) is exposed to a gas pulse of an oxygen-containing gas, nitrogen-containing gas or an oxygen- and nitrogen-containing gas. In alternative embodiments, the first and second rare earth precursors may be pulsed together, and either or both, may be pulsed together with the aluminum precursor. The first and second rare earth precursors comprise a different rare earth metal element. The sequential exposing steps may be repeated to deposit a mixed rare earth oxynitride or aluminum oxynitride layer (96) with a desired thickness. Purge or evacuation steps may also be performed after each gas pulse.

Abstract translation: 提供了一种用于沉积包含至少两种呈氮氧化物或氮氧化铝形式的稀土金属元素的栅极电介质的方法。 该方法包括将处理室（10）中的衬底（25,92）布置并将衬底（25,92）暴露于含有第一稀土前体的气体脉冲和含有第二稀土前体的气体脉冲。 衬底（25,92）也可以任选地暴露于含有铝前体的气体脉冲。 在每个前体气体脉冲之后，基板（25,92）暴露于含氧气体，含氮气体或含氧和含氮气体的气体脉冲。 在替代实施例中，第一和第二稀土前体可以被脉冲在一起，并且任一种或两者可以与铝前体一起脉冲。 第一和第二稀土前体包含不同的稀土金属元素。 可以重复顺序曝光步骤以沉积具有所需厚度的混合稀土氧氮化物或氮氧化铝层（96）。 在每个气体脉冲之后也可以进行吹扫或抽空步骤。

公开(公告)号：WO2007117989A2

公开(公告)日：2007-10-18

申请号：PCT/US2007/065015

申请日：2007-03-27

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  CLARK, Robert, D.

Inventor： CLARK, Robert, D.

IPC: H01L21/314 ,  C23C16/448 ,  C23C16/455 ,  C23C16/30 ,  C23C28/02

CPC classification number: H01L21/02192 ,  C23C16/308 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/5096 ,  H01L21/02178 ,  H01L21/02194 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3142 ,  H01L21/3145 ,  H01L21/318

Abstract: A method is provided for depositing a gate dielectric that includes at least two rare earth, metal elements in the form of an oxynitride or an aluminum oxynitride. The method includes disposing a substrate (25, 92) in a process chamber (10) and exposing the substrate (25, 92) to a gas pulse containing a first rare earth precursor and to a gas pulse containing a second rare earth precursor. The substrate (25, 92) may also optionally be exposed to a gas pulse containing an aluminum precursor. Sequentially after each precursor gas pulse, the substrate (25, 92) is exposed to a gas pulse of an oxygen-containing gas, nitrogen-containing gas or an oxygen- and nitrogen-containing gas. In alternative embodiments, the first and second rare earth precursors may be pulsed together, and either or both, may be pulsed together with the aluminum precursor. The first and second rare earth precursors comprise a different rare earth metal element. The sequential exposing steps may be repeated to deposit a mixed rare earth oxynitride or aluminum oxynitride layer (96) with a desired thickness. Purge or evacuation steps may also be performed after each gas pulse.

Abstract translation: 提供了一种用于沉积包含至少两种呈氮氧化物或氮氧化铝形式的稀土金属元素的栅极电介质的方法。 该方法包括将处理室（10）中的衬底（25,92）布置并将衬底（25,92）暴露于含有第一稀土前体的气体脉冲和含有第二稀土前体的气体脉冲。 衬底（25,92）也可以任选地暴露于含有铝前体的气体脉冲。 在每个前体气体脉冲之后，基板（25,92）暴露于含氧气体，含氮气体或含氧和含氮气体的气体脉冲。 在替代实施例中，第一和第二稀土前体可以被脉冲在一起，并且任一种或两者可以与铝前体一起脉冲。 第一和第二稀土前体包含不同的稀土金属元素。 可以重复顺序曝光步骤以沉积具有所需厚度的混合稀土氧氮化物或氮氧化铝层（96）。 在每个气体脉冲之后也可以进行吹扫或抽空步骤。

公开(公告)号：WO2007117896A1

公开(公告)日：2007-10-18

申请号：PCT/US2007/064464

申请日：2007-03-21

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  DIP, Anthony

Inventor： DIP, Anthony

IPC: H01L21/314 ,  H01L21/316

CPC classification number: H01L21/3143 ,  H01L21/0223 ,  H01L21/02233 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/31658 ,  H01L21/31662

Abstract: A method for performing an oxidation process on a plurality of substrates in a batch processing system. According to one embodiment, the method includes selecting a N 2 O-based oxidation process for the substrates (16) including a first process gas containing N 2 O that thermally decomposes in a process chamber (12) of the batch processing system to N 2 , O 2 , and NO byproducts, and generating a replacement NO-based oxidation process for the substrates (16) including a second process gas containing N 2 , O 2 , and NO with molar concentrations that mimic that of the N 2 , O 2 , and NO byproducts in the N 2 O-based oxidation process. According to another embodiment of the invention, the NO-based oxidation process contains NO, O 2 , and an inert gas.

Abstract translation: 一种在批处理系统中对多个基板进行氧化处理的方法。 根据一个实施方案，该方法包括选择用于基材（16）的基于N 2 O O的氧化工艺，所述方法包括含有N 2 O 3的第一工艺气体，所述第一工艺气体在 将分批处理系统的处理室（12）分配给N 2 O 2 O 2和NO副产物，并为基板（16）产生替代的基于NO的氧化工艺 ），其包括含有N 2 O 2 O 2的第二工艺气体和具有模拟N 2 O，O 2 <！ - SIPO - >和在N 2 O基氧化方法中的NO副产物。 根据本发明的另一个实施方案，基于NO的氧化方法包含NO，O 2 H 2和惰性气体。

公开(公告)号：WO2007115080A1

公开(公告)日：2007-10-11

申请号：PCT/US2007/065473

申请日：2007-03-29

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  KAUSHAL, Sanjeev ,  PANDEY, Pradeep ,  SUGISHIMA, Kenji

Inventor： KAUSHAL, Sanjeev ,  PANDEY, Pradeep ,  SUGISHIMA, Kenji

IPC: G05B19/418 ,  G05B23/02

CPC classification number: G05B19/41875 ,  C23C16/52 ,  G05B23/0254 ,  G05B2219/37514 ,  G05B2219/37533 ,  G05B2219/45031 ,  Y02P90/22 ,  Y02P90/26

Abstract: A method of monitoring a single-wafer processing system (100, 200, 300) in real-time using low-pressure based modeling techniques that include processing a wafer (W) in a processing chamber (50, 104, 202); determining a measured dynamic process response for a rate of change for a process parameter; executing a real-time dynamic model to generate a predicted dynamic process response; determining a dynamic estimation error using a difference between the predicted dynamic process response and the expected process response; and comparing the dynamic estimation error to operational limits.

Abstract translation: 一种使用包括处理处理室（50,104,202）中的晶片（W）的基于低压的建模技术来实时监测单晶片处理系统（100,200,300）的方法; 确定针对过程参数的变化率的测量的动态过程响应; 执行实时动态模型以产生预测的动态过程响应; 使用预测的动态过程响应和预期过程响应之间的差来确定动态估计误差; 并将动态估计误差与运算极限进行比较。

公开(公告)号：WO2007112180A2

公开(公告)日：2007-10-04

申请号：PCT/US2007/063462

申请日：2007-03-07

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  KAUSHAL, Sanjeev ,  SUGISHIMA, Kenji ,  RAO, Donthineni, Ramesh, Kumar

Inventor： KAUSHAL, Sanjeev ,  SUGISHIMA, Kenji ,  RAO, Donthineni, Ramesh, Kumar

IPC: H01L21/00

CPC classification number: H01L21/67253 ,  H01L21/67242 ,  H01L21/67248 ,  H01L21/67288 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method and system for non-invasive sensing and monitoring of a processing system (100, 200) employed in semiconductor manufacturing. The method allows for detecting and diagnosing drift and failures in the processing system (100, 200) and taking the appropriate correcting measures. The method includes positioning at least one non-invasive sensor (247a-d, 248a-b, 249a-b, 250a-c, 906) on an outer surface of a system component of the processing system (200), where the at least one invasive sensor forms a wireless sensor network (902), acquiring a sensor signal from the at least one non-invasive sensor (247a-d, 248a-b, 249a-b, 250a-c, 906), where the sensor signal tracks a gradual or abrupt change in a processing state of the system component during flow of a process gas in contact with the system component, and extracting the sensor signal from the wireless sensor network (902) to store and process the sensor signal. In one embodiment, the non-invasive sensor (247a-d, 248a-b, 249a-b, 250a-c, 906) can be an accelerometer sensor and the wireless sensor network (902) can be motes-based.

Abstract translation: 一种用于半导体制造中使用的处理系统（100,200）的非侵入式感测和监测的方法和系统。 该方法允许检测和诊断处理系统（100,200）中的漂移和故障并采取适当的校正措施。 该方法包括将至少一个非侵入式传感器（247a-d，248a-b，249a-b，250a-c，906）定位在处理系统（200）的系统部件的外表面上，其中至少 一个入侵传感器形成无线传感器网络（902），从至少一个非侵入式传感器（247a-d，248a-b，249a-b，250a-c，906）获取传感器信号，其中传感器信号跟踪 在与系统部件接触的处理气体的流动期间系统部件的处理状态的逐渐或突然的变化，以及从无线传感器网络（902）提取传感器信号以存储和处理传感器信号。 在一个实施例中，非侵入式传感器（247a-d，248a-b，249a-b，250a-c，906）可以是加速度计传感器，并且无线传感器网络（902）可以是基于空白的。

公开(公告)号：WO2007109410A3

公开(公告)日：2007-09-27

申请号：PCT/US2007/063285

申请日：2007-03-05

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  SUZUKI, Kenji ,  GOMI, Atsushi ,  HARA, Masamichi ,  MIZUSAWA, Yasushi

Inventor： SUZUKI, Kenji ,  GOMI, Atsushi ,  HARA, Masamichi ,  MIZUSAWA, Yasushi

IPC: C23C16/44

Abstract: A method and system is described for reducing particle contamination of a substrate (25) in a deposition system (1). The deposition system comprises one or more particle diffusers (47) disposed therein and configured to prevent or partially prevent the passage of film precursor particles, or break-up or partially break-up film precursor particles. The particle diffuser may be installed in the film precursor evaporation system (50), or the vapor delivery system (40), or the vapor distribution system (30), or two or more thereof.

公开(公告)号：WO2007109410A2

公开(公告)日：2007-09-27

申请号：PCT/US2007063285

申请日：2007-03-05

Applicant: TOKYO ELECTRON LTD ,  TOKYO ELECTRON AMERICA INC ,  SUZUKI KENJI ,  GOMI ATSUSHI ,  HARA MASAMICHI ,  MIZUSAWA YASUSHI

Inventor： SUZUKI KENJI ,  GOMI ATSUSHI ,  HARA MASAMICHI ,  MIZUSAWA YASUSHI

IPC: C23C16/44

CPC classification number: C23C16/16 ,  C23C16/4481 ,  C23C16/45565 ,  C23C16/45568 ,  C23C16/45574

Abstract: A method and system is described for reducing particle contamination of a substrate (25) in a deposition system (1). The deposition system comprises one or more particle diffusers (47) disposed therein and configured to prevent or partially prevent the passage of film precursor particles, or break-up or partially break-up film precursor particles. The particle diffuser may be installed in the film precursor evaporation system (50), or the vapor delivery system (40), or the vapor distribution system (30), or two or more thereof.

Abstract translation: 描述了用于减少沉积系统（1）中的基底（25）的颗粒污染的方法和系统。 沉积系统包括设置在其中的一个或多个粒子扩散器（47），并构造成防止或部分地阻止膜前体颗粒的通过，或破坏或部分破坏膜前体颗粒。 粒子扩散器可以安装在膜前体蒸发系统（50）或蒸汽输送系统（40）或蒸气分配系统（30）中，或者其两个或多个。

公开(公告)号：WO2007095407A1

公开(公告)日：2007-08-23

申请号：PCT/US2007/060561

申请日：2007-01-16

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  SUZUKI, Kenji ,  GUIDOTTI, Emmanuel, P. ,  LEUSINK, Gerrit, J. ,  HARA, Masamichi ,  KUROIWA, Daisuke ,  ISHIZAKA, Tadahiro

Inventor： SUZUKI, Kenji ,  GUIDOTTI, Emmanuel, P. ,  LEUSINK, Gerrit, J. ,  HARA, Masamichi ,  KUROIWA, Daisuke ,  ISHIZAKA, Tadahiro

IPC: C23C16/448

CPC classification number: C23C16/4481

Abstract: A high conductance, multi-tray film precursor evaporation system (1 ) coupled with a high conductance vapor delivery system (40) is described for increasing deposition rate by increasing exposed surface area of film precursor. The multi-tray film precursor evaporation system (50) includes one or more trays (340). Each tray is configured to support and retain film precursor (350) in, for example, solid powder form or solid tablet form. Additionally, each tray is configured to provide for a high conductance flow of carrier gas over the film precursor while the film precursor is heated. For example, the carrier gas flows inward over the film precursor, and vertically upward through a flow channel (318) within the stackable trays and through an outlet (322) in the solid precursor evaporation system.

Abstract translation: 描述了与高电导蒸气输送系统（40）耦合的高电导多托盘膜前体蒸发系统（1），以通过增加膜前体的暴露表面积来提高沉积速率。 多托盘膜前体蒸发系统（50）包括一个或多个托盘（340）。 每个托盘构造成支撑并保持例如固体粉末形式或固体片剂形式的膜前体（350）。 此外，每个托盘构造成在膜前体被加热的同时提供载气在膜前体上的高电导流。 例如，载气在膜前体向内流动，并且垂直向上流过可堆叠托盘内的流动通道（318）并通过固体前驱物蒸发系统中的出口（322）。

公开(公告)号：WO2005095666A3

公开(公告)日：2007-05-18

申请号：PCT/US2005001584

申请日：2005-01-20

Applicant: TOKYO ELECTRON LTD ,  TOKYO ELECTRON AMERICA INC ,  VUKOVIC MIRKO ,  RUSSELL DERREK ANDREW

Inventor： VUKOVIC MIRKO ,  RUSSELL DERREK ANDREW

IPC: H01J37/32 ,  C23C14/00 ,  H01J7/24 ,  H01J37/34

CPC classification number: H01J37/3405 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32532 ,  H01J37/3266 ,  H01J37/32724 ,  H01J37/3414 ,  H01J37/3461 ,  H01J37/3497 ,  H01J2237/332

Abstract: A capacitive plasma source (22) for iPVD is immersed in a strong local magnetic field (31) , and may be a drop-in replacement for an inductively coupled plasma (ICP) source of iPVD. The source includes an annular electrode (23) having a magnet pack (30) behind it that includes a surface magnet (33-35) generally parallel to the electrode surface with a magnetic field extending radially over the electrode surface. Side magnets, such as inner and outer annular ring magnets (36 and 32, respectively) , have polar axes that intersect the electrode with poles closest to the electrode of the same polarity as the adjacent pole of the surface magnet. A ferromagnetic back plate (37) or back magnet (37a) interconnects the back poles of the side magnets (32, 36) . A ferromagnetic shield (37b) behind the magnet pack (30) confines the field away (31) from the iPVD material source (21) .

Abstract translation: 用于iPVD的电容等离子体源（22）浸入强的局部磁场（31）中，并且可以替代iPVD的电感耦合等离子体（ICP）源。 源包括环形电极（23），其具有在其后面的磁体组件（30），其包括大致平行于电极表面的表面磁体（33-35），其具有沿电极表面径向延伸的磁场。 诸如内外环形磁铁（分别为36和32）的侧磁体具有与电极相交的极轴，极极与最靠近与表面磁体的相邻磁极相同极性的电极。 铁磁背板（37）或后磁铁（37a）将侧磁体（32,36）的后极互连。 磁体组件（30）后面的铁磁屏蔽（37b）限制了与iPVD材料源（21）的距离（31）。

公开(公告)号：WO2007047284A1

公开(公告)日：2007-04-26

申请号：PCT/US2006/039640

申请日：2006-10-10

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  CARCASI, Michael, A.

Inventor： CARCASI, Michael, A.

IPC: H01L21/3105 ,  H01L21/316 ,  H01L21/00 ,  G03F7/16 ,  B05C11/08

CPC classification number: H01L21/02282 ,  H01L21/0276 ,  H01L21/31051 ,  H01L21/31058 ,  H01L21/312 ,  H01L21/316 ,  H01L21/6708 ,  H01L21/6715

Abstract: A system and method affecting mass transport to reduce or eliminate iso-dense bias in spin-on-dielectric (SOD) or spin-on-glass (SOG) processes use a nozzle (25) to dispense the liquid dielectric and a separate nozzle (26) for jetting N2 or other gas onto a semiconductor wafer (10). The gas is jetted onto the wafer shortly after spin-on-dielectric liquid is dispensed. The jetting of the gas in the spin-coating process increases the volumetric flow of the liquid coating material in the radial direction, which in turn reduces the field thickness above isolated or no patterned areas to that at the more densely patterned areas, thereby improving the uniformity of the spun-on dielectric thickness on the wafer.

Abstract translation: 影响质量传输以减少或消除旋转电介质（SOD）或旋涂玻璃（SOG）工艺中的等密度偏差的系统和方法使用喷嘴（25）分配液体电介质和单独的喷嘴（ 26），用于将N 2或其它气体喷射到半导体晶片（10）上。 在旋涂电介质液体分配后不久，将气体喷射到晶片上。 在旋涂过程中喷射气体会增加液体涂覆材料在径向方向上的体积流量，这进一步减小了隔离或无图案化区域上的场强比在更密集图案区域的场强，从而改善了 晶片上纺丝介质厚度的均匀性。