Abstract:
According to an embodiment of the present invention, a method for controlling a terminal apparatus providing a haptic effect using a haptic engine comprises: a step for sensing a haptic event; a step for determining vibration pattern corresponding to the haptic event by implementing a haptic function for non-physical variable base inside a haptic engine; a step for delivering the vibration pattern from the haptic engine to a device driver; and a step for realizing the haptic effect by which the device driver operates a vibrator with the vibration pattern.
Abstract:
PURPOSE: Wireless power transmission apparatus is provided to design a resonator, which has high Q factor, and adaptively match impedance, thereby effectively conducting wireless power transmission even when user freely positions a mobile terminal on a charging pad. CONSTITUTION: Wireless power transmission apparatus comprises; a transmission electric power converting section (211) which converts direct current (DC) power into alternating current (AC) power; a control unit (213) which adjusts a Q factor of a transmission resonator by using the frequency of the transformed AC power and resonant frequency of a transmission resonator, and controls adaptive impedance matching; a transmission resonator (212) which wirelessly transmits the transformed AC power to a receiver through the controlled adaptive impedance matching and the adjusted Q factor; and a transmission resonator (212) which has a coil installed in the transmitter. [Reference numerals] (211) Transmission electric power converting section; (212) Tx resonator; (213,216) Control unit; (214) Rx resonator; (215) Receiving electric power converting section; (217) Battery
Abstract:
PURPOSE: A method for forming an amorphous carbon film and a method for forming patterns using the same are provided to manufacture a semiconductor device including fine patterns using an amorphous carbon film with the superior planarity as a hard mask film. CONSTITUTION: A susceptor(12) is located in a depositing chamber(10) in order to support a substrate. A guide ring(14) is located on the edge side of the susceptor in order to guide the substrate. A heater(16) is located in the susceptor. A shower head(18) is located to be opposite with the susceptor and is connected with a depositing gas supplying unit(22) which is located on the outside of the depositing chamber. High frequency power(20) is connected with the shower head.
Abstract:
씨모스 이미지 센서를 제공한다. 이 이미지 센서는 입사되는 빛에 의해 신호 전하를 발생하는 포토다이오드 영역과, 광역 트랜스퍼 신호에 의해 신호 전하를 제 1 부유 확산층으로 전달하는 광역 트랜스퍼 트랜지스터와, 상기 제 1 부유 확산층에 축적된 신호 전하를 픽셀 선택 신호에 의해 제 2 부유 확산층으로 전달하는 픽셀 트랜스퍼 트랜지스터와, 제 2 부유 확산층에 축적된 신호 전하에 의해 데이타 출력 노드의 전압을 변경시키는 소오스 팔로어 트랜지스터와, 리셋 신호에 의해 축적된 신호 전하를 리셋시키는 리셋 트랜지스터를 포함한다.
Abstract:
A method for fabricating a semiconductor integrated circuit device is provided to improve an image repeatability characteristic by avoiding generation of a flicker noise. A first insulation layer and a conductive layer for a first gate electrode are formed on a substrate in which an analog circuit region, a digital circuit region and an image sensing circuit region are defined(S10). The first insulation layer and the conductive layer for the first gate electrode that are formed on the digital circuit region are removed(S20). A blocking layer is conformally formed on the upper surface and lateral surface of the conductive layer for the first gate electrode in the analog circuit region and the image sensing circuit region, made of SiON(S30). A second insulation layer is formed on the surface of the substrate in the digital circuit region(S50). A conductive layer for a second gate electrode is formed on the second insulation layer(S60). The conductive layers for the first and second gate electrodes and the first and second insulation layers are patterned to form first and second gates and the first and second gate insulation layers(S90). The first insulation layer can be made of an oxide layer, and the second insulation layer can be made of an oxynitride layer.