발광 소자의 투과성 전도막 형성을 위한 스퍼터링 장치 및 방법
    101.
    发明公开
    발광 소자의 투과성 전도막 형성을 위한 스퍼터링 장치 및 방법 无效
    用于形成发光装置的透明导电氧化物的溅射装置和方法

    公开(公告)号:KR1020120002821A

    公开(公告)日:2012-01-09

    申请号:KR1020100063524

    申请日:2010-07-01

    Abstract: PURPOSE: A sputtering device and method for forming a transparent conductive film of an emitting device is provided to prevent the deterioration of a p-type semiconductor by controlling the influence of plasma. CONSTITUTION: A target receiving part(110) is located in one inner side wall of a chamber. A substrate receiving part(130) is formed in a location which faces the target receiving part. Metal net filters(190) having more than 2 layers are formed between the target receiving part and the substrate receiving part. At least one layer among the metal net filters having more than 2 layers is used for forming the transparent conductive film of an emitting device which is used as a grounding electrode. The metal net filters having more than 2 layers have a mesh type or a stripe type scale.

    Abstract translation: 目的:提供一种用于形成发光器件的透明导电膜的溅射装置和方法,以通过控制等离子体的影响来防止p型半导体的劣化。 构成:目标接收部分(110)位于室的一个内侧壁中。 基板接收部(130)形成在面向目标接收部的位置。 在目标接收部分和基板接收部分之间形成具有多于2层的金属网过滤器(190)。 使用具有2层以上的金属网过滤器中的至少一层用于形成用作接地电极的发光器件的透明导电膜。 具有2层以上的金属网过滤器具有网状或条形标尺。

    반도체 발광소자
    102.
    发明公开

    公开(公告)号:KR1020110111629A

    公开(公告)日:2011-10-12

    申请号:KR1020100030799

    申请日:2010-04-05

    CPC classification number: H01L33/38 H01L33/20 H01L33/42

    Abstract: 본 발명은 반도체 발광소자에 관한 것으로서, 본 발명의 일 실시 형태는 n형 및 p형 반도체층 및 이들 사이에 배치된 활성층 및 상기 n형 및 p형 반도체층과 각각 전기적으로 연결된 n형 및 p형 금속 전극을 포함하며, 상기 n형 및 p형 금속 전극 중 적어도 하나는 표면에 존재하는 플라즈몬과 상기 활성층에서 발생된 광자의 공명에 의하여 발생된 에너지가 빛으로 외부에 방사될 수 있도록 두께 방향으로 형성된 하나 이상의 관통홀을 갖는 반도체 발광소자를 제공한다.
    본 발명은 반도체 발광소자의 적층 구조 상부에 미세한 관통홀을 포함하는 전극을 형성시킴으로써, 전극의 홀을 통하여 빛이 플라즈몬 상태로 전달될 수 있기 때문에 통상 투명전극을 사용하여 전류를 분산시키는 경우에 비하여 그 광추출 효율이 매우 높다.

    패턴 형성방법, 반도체 발광소자 제조방법 및 반도체 발광소자
    103.
    发明公开
    패턴 형성방법, 반도체 발광소자 제조방법 및 반도체 발광소자 无效
    图案形成方法,半导体发光器件和半导体发光器件的制造方法

    公开(公告)号:KR1020110103687A

    公开(公告)日:2011-09-21

    申请号:KR1020100022866

    申请日:2010-03-15

    CPC classification number: H01L33/38 H01L33/005 H01L33/42 H01L2933/0016

    Abstract: 패턴 형성방법, 반도체 발광소자 제조방법 및 반도체 발광소자에 관한 것으로서, 본 발명의 일 측면은 광 투광성을 갖는 물질로 이루어진 기재의 표면 위에 희생층을 형성하는 단계와, 상기 희생층 상에 상기 희생층 상면 중 일부를 노출시키도록 오픈 영역을 갖는 마스크를 형성하는 단계와, 상기 오픈 영역을 통하여 상기 희생층 및 상기 기재를 식각하여 상기 기재에 요철 구조를 형성하는 단계 및 상기 희생층과 상기 마스크를 상기 기재로부터 제거하는 단계를 포함하는 패턴 형성방법을 제공한다.
    본 발명은 열적으로 취약한 투명 전극 위에 추가적인 희생층을 형성한 후 귀금속 층의 응집 및 식각 조작을 수행하므로 투명금속이나 반도체층에 대한 열적 손상을 방지할 수 있으며, 또한 형성된 식각 패턴은 반도체 발광소자의 광추출 효율 향상에 효과적이다.

    미로 같은 크랙 스토퍼 구조물을 갖는 반도체 및 제조 방법
    104.
    发明公开
    미로 같은 크랙 스토퍼 구조물을 갖는 반도체 및 제조 방법 无效
    半导体具有生物反应器的层状结构及其制造方法

    公开(公告)号:KR1020100064602A

    公开(公告)日:2010-06-15

    申请号:KR1020080123108

    申请日:2008-12-05

    Abstract: PURPOSE: A semiconductor with a crack stopper structure like a labyrinthine and a manufacturing method thereof are provided to prevent a crack due to lateral stress by forming a crack stopper inside a chip edge. CONSTITUTION: A crack stopper trench is formed on a first interlayer insulation layer(420). A first metal wiring layer is formed on a crack stopper trench hole. A second interlayer insulation layer is formed on the first metal wiring layer. A bar type via is formed on the second interlayer insulation layer and a first via metal layer(430) is formed. The second metal wiring layer is formed on the second interlayer insulation layer and the first via metal layer. A third interlayer insulation layer is formed on the second metal wiring layer. The bar type via is formed on a third interlayer insulation layer(445) and a second via metal layer is formed. A third metal wiring layer is formed on the third interlayer insulation layer and the second via metal layer.

    Abstract translation: 目的:提供具有诸如迷宫式的裂纹阻挡结构的半导体及其制造方法,以通过在芯片边缘内形成裂纹阻挡来防止由于横向应力引起的裂纹。 构成:在第一层间绝缘层(420)上形成裂纹阻挡沟槽。 第一金属布线层形成在裂缝塞槽沟上。 在第一金属布线层上形成第二层间绝缘层。 在第二层间绝缘层上形成棒状通孔,形成第一通孔金属层(430)。 第二金属布线层形成在第二层间绝缘层和第一通孔金属层上。 在第二金属布线层上形成第三层间绝缘层。 棒状通孔形成在第三层间绝缘层(445)上,形成第二通孔金属层。 第三金属布线层形成在第三层间绝缘层和第二通孔金属层上。

    액정 표시 장치
    105.
    发明公开
    액정 표시 장치 无效
    液晶显示器

    公开(公告)号:KR1020100024639A

    公开(公告)日:2010-03-08

    申请号:KR1020080083302

    申请日:2008-08-26

    CPC classification number: G02F1/136213 G02F2001/133638 G02F2001/134345

    Abstract: PURPOSE: A liquid crystal display is provided to make a viewing angle of the liquid crystal display and improve side visibility. CONSTITUTION: A liquid crystal display comprises a gate line(121), an insulating layer, a data line(171), the first and second drain electrodes(175a,175b), the first and second sub-pixel electrodes(191a,191b), sustain electrode lines(131a,131b), the first polarizer, the second polarizer, the first λ/4 plate, the second λ/4 plate, and a diffusing plate. The gate line is formed on the first substrate. The insulating layer is formed on the gate line. The data line and the first and second drain electrodes are formed on the insulating layer. The first and second sub-pixel electrodes are respectively connected to the first and second drain electrodes.

    Abstract translation: 目的:提供液晶显示器,以使液晶显示器的视角得到提高,并提高侧视觉度。 构成:液晶显示器包括栅极线(121),绝缘层,数据线(171),第一和第二漏极电极(175a,175b),第一和第二子像素电极(191a,191b) ,维持电极线(131a,131b),第一偏振器,第二偏振器,第一λ/ 4板,第二λ/ 4板和漫射板。 栅极线形成在第一基板上。 绝缘层形成在栅极线上。 数据线和第一和第二漏电极形成在绝缘层上。 第一和第二子像素电极分别连接到第一和第二漏电极。

    기판 표면 처리 방법, 이를 이용한 이미지 센서의 제조방법 및 이에 따라 제조된 이미지 센서
    106.
    发明公开
    기판 표면 처리 방법, 이를 이용한 이미지 센서의 제조방법 및 이에 따라 제조된 이미지 센서 有权
    基板表面处理方法,使用处理方法制作图像传感器的方法及其制作的图像传感器

    公开(公告)号:KR1020090079107A

    公开(公告)日:2009-07-21

    申请号:KR1020080005079

    申请日:2008-01-16

    Inventor: 김기범 노현필

    Abstract: A processing method of a substrate surface, an image sensor manufacturing method using the same, and an image sensor manufactured thereby are provided to improve a low illumination characteristic of an image sensor by removing defects of a surface of a substrate. A silicon substrate preparation process is performed to prepare a silicon substrate having a surface defect(S510). A chemical solution supply process is performed to supply a chemical solution for processing a surface of the silicon substrate(S520). A chemical oxide layer manufacturing process is performed to consume the surface of the silicon substrate and to manufacture a chemical oxide layer on the silicon substrate(S530). A surface defect removal process is performed to remove defects from the surface of the silicon substrate.

    Abstract translation: 提供基板表面的处理方法,使用该方法的图像传感器制造方法以及由此制造的图像传感器,以通过去除基板表面的缺陷来改善图像传感器的低照度特性。 进行硅衬底制备工艺以制备具有表面缺陷的硅衬底(S510)。 进行化学溶液供给处理以提供用于处理硅衬底表面的化学溶液(S520)。 执行化学氧化物层制造工艺以消耗硅衬底的表面并在硅衬底上制造化学氧化物层(S530)。 进行表面缺陷去除处理以从硅衬底的表面去除缺陷。

    휴대용 단말기의 2-방향 키
    107.
    发明公开
    휴대용 단말기의 2-방향 키 有权
    便携式终端的2路钥匙

    公开(公告)号:KR1020080045872A

    公开(公告)日:2008-05-26

    申请号:KR1020060115094

    申请日:2006-11-21

    Inventor: 김기범 배광진

    Abstract: A two-way key of a mobile terminal is provided to be manipulated in the same manner as a mechanical spring of an analog type wristwatch or a time control lever when applied for a watch-type mobile terminal. A fixed member is mounted in a mobile terminal. A driving member(102) is rotatably combined with the fixed member. A manipulation member(103) is pivotably combined with the fixed member. When the driving member rotates, the manipulation member rotates by being interfered with by the driving member. Tact switches are disposed at both sides based on a pivot axis of the manipulation member. Dome switches are disposed at both sides based on the pivot axis of the manipulation member. As the manipulation member rotates, one of the dome switches is manipulated. A pair of driving protrusions(121) are formed at the driving member. A pair of slope faces are formed at the manipulation member along a locus of the driving protrusions formed as the driving member rotates.

    Abstract translation: 移动终端的双向键被提供为与应用于手表式移动终端时的模拟式手表或时间控制杆的机械弹簧相同的方式操作。 固定构件安装在移动终端中。 驱动构件(102)与固定构件可旋转地组合。 操作构件(103)与固定构件可枢转地组合。 当驱动构件旋转时,操作构件被驱动构件干涉而旋转。 基于操作构件的枢转轴,两侧设置有轻触开关。 基于操作构件的枢转轴线,在两侧设置圆顶开关。 当操作构件旋转时,操纵一个圆顶开关。 一对驱动突起(121)形成在驱动构件上。 沿着驱动构件旋转形成的驱动突起的轨迹,在操作构件上形成一对倾斜面。

    고출력 후방 광펌핑 반도체 레이저
    108.
    发明授权
    고출력 후방 광펌핑 반도체 레이저 有权
    고출력광광펌핑체체체레이저

    公开(公告)号:KR100754401B1

    公开(公告)日:2007-08-31

    申请号:KR1020060042831

    申请日:2006-05-12

    Abstract: A high-power optically end-pumped external-cavity semiconductor laser is provided to simplify manufacturing processes and reduce the whole size by arranging a pump light source laser in a line with other parts at a rear part of a laser chip and removing a collimating lens. A high-power optically end-pumped external-cavity semiconductor laser includes a laser chip(30), an external mirror(60), an SHG(Second Harmonic Generation) crystal(40), and a microlens integrated heat sink(20). The laser chip(30) has an active layer(34) and a distributed bragg reflecting layer(32), and generates a dominant wavelength. The external mirror(60) is located by being separated from one surface of the laser chip(30) by a predetermined distance, and forms the distributed bragg reflecting layer(32) and a resonator(70). The SHG crystal(40) is placed between the external mirror(60) and the laser chip(30). The microlens integrated heat sink(20) emits heat generated from the laser chip(30), and is attached to the other surface of the laser chip(30) so as to collect pumping light inputted to the other surface of the laser chip(30).

    Abstract translation: 提供高功率光学端泵浦外腔半导体激光器以简化制造工艺并通过将激励光源激光器与激光器芯片后部的其他部件排成一条直线并减小整个尺寸并去除准直透镜 。 高功率光学端泵浦外腔半导体激光器包括激光器芯片(30),外部反射镜(60),SHG(第二谐波发生)晶体(40)和微透镜集成散热器(20)。 激光芯片(30)具有有源层(34)和分布式布拉格反射层(32),并产生主波长。 外部反射镜60通过与激光芯片30的一个表面分开预定距离而定位,并形成分布式布拉格反射层32和谐振器70。 SHG晶体(40)被放置在外部反射镜(60)和激光器芯片(30)之间。 微透镜一体型散热器20发出从激光芯片30产生的热,并且附着在激光芯片30的另一个表面上以收集输入到激光芯片30的另一个表面的泵浦光 )。

    휴대전화단말장치로 착신호가 있음을 경보하는 장치 및 방법
    109.
    发明公开
    휴대전화단말장치로 착신호가 있음을 경보하는 장치 및 방법 无效
    用于警告便携式终端进入呼叫的装置和方法

    公开(公告)号:KR1020010060971A

    公开(公告)日:2001-07-07

    申请号:KR1019990063433

    申请日:1999-12-28

    Inventor: 김기범

    CPC classification number: H04W88/02 H03L7/093 H04W4/16

    Abstract: PURPOSE: An apparatus and a method for alerting a portable terminal to an incoming call is provided to offer an auxiliary calling alarm device and method to notify a portable terminal that an incoming call has been arrived. CONSTITUTION: A control part(2) controls the oscillation frequency of a frequency oscillator(6) to generate an incoming call alarm signal indicating that an incoming call exists. A memory(3) stores the data inputted through an interface part(1) from a PC. A transmitting signal is first converted into an analog signal through a D/A converter/filter(19) and then outputted to a buffer(16). The buffer(16) converts the oscillation frequency of the transmitting signal through a PLL and VCO(18) and outputs it to an AGC Amp(Auto Gain Controlled Amplifier)(5). The AGC Amp(5) controls and amplifies the gain of the transmitting signal. The amplified transmitting signal is filtered into an IF(Intermediate Frequency) signal through an IF BPF(IF Band Pass Filter)(8). This filtered IF signal is mixed with a carrier wave frequency through a mixer(11). The power of the mixed signal is amplified through a power amplifier(13). The power amplified signal is transmitted through a duplexer(15).

    Abstract translation: 目的:提供一种用于向便携式终端提醒来电的装置和方法,以提供辅助呼叫报警装置和方法来通知便携式终端已经到达呼入。 构成:控制部分(2)控制频率振荡器(6)的振荡频率以产生指示存在来电的来电报警信号。 存储器(3)存储通过PC的接口部分(1)输入的数据。 发送信号首先通过D / A转换器/滤波器(19)转换为模拟信号,然后输出到缓冲器(16)。 缓冲器(16)通过PLL和VCO(18)转换发送信号的振荡频率,并将其输出到AGC Amp(自动增益控制放大器)(5)。 AGC Amp(5)控制和放大发射信号的增益。 放大的发送信号通过IF BPF(IF带通滤波器)(8)被滤波成IF(中频)信号。 该滤波的IF信号通过混频器(11)与载波频率混合。 混合信号的功率通过功率放大器(13)放大。 功率放大信号通过双工器(15)传输。

    수신신호 판별회로 및 그 방법
    110.
    发明授权
    수신신호 판별회로 및 그 방법 有权
    接收信号识别电路及其方法

    公开(公告)号:KR100258931B1

    公开(公告)日:2000-06-15

    申请号:KR1019970025222

    申请日:1997-06-17

    Inventor: 김기범

    Abstract: PURPOSE: A circuit and a method of deciding a received signal are to decide whether the received signal is a high definition TV signal or an analog broadcasting type TV signal, thereby preventing a mis-operation of a receiver. CONSTITUTION: A tuner receives a high definition TV signal having a desired digital format or an analog broadcasting type TV signal. The first signal processing portion demodulates the high definition TV signal output from the tuner into a baseband, and detects a segment synchronizing signal and a symbol clock from the demodulated signal. The second signal processing portion demodulates the analog broadcasting type TV signal into the baseband. A displaying portion selects and displays one of output signals of the first and second signal processing portion according to a deciding signal output from a deciding circuit. In the deciding circuit, the first and second correlating portion(204,214) calculates a correlation level between the TV signal received through the tuner and the first and second reference signal to output the first and second correlating value.

    Abstract translation: 目的:确定接收信号的电路和方法是确定接收到的信号是高分辨率TV信号还是模拟广播型TV信号,从而防止接收机的误操作。 构成:调谐器接收具有所需数字格式或模拟广播型TV信号的高清晰度电视信号。 第一信号处理部分将从调谐器输出的高分辨率TV信号解调为基带,并从解调信号中检测出段同步信号和符号时钟。 第二信号处理部分将模拟广播型TV信号解调为基带。 显示部根据从决定电路输出的决定信号,选择并显示第一和第二信号处理部的输出信号之一。 在判定电路中,第一和第二相关部分(204,214)计算通过调谐器接收的TV信号与第一和第二参考信号之间的相关电平,以输出第一和第二相关值。

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