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公开(公告)号：KR101923726B1
公开(公告)日：2018-11-29
申请号：KR1020130028122
申请日：2013-03-15
Applicant: 한국전자통신연구원
Abstract: 본발명은화재감지시스템을개시한다. 그의시스템은, 전원과, 상기전원에연결되어화재발생을표시하는표시부와, 상기전원에연결되어화재발생을감지하는금속-절연체전이(MIT) 소자를포함한다. 여기서, 상기금속-절연체전이소자는, 기판과상기기판상의복수개의제 1 전극들과, 상기제 1 전극들각각에연결된바나듐옥사이드의금속-절연체전이물질들과, 상기금속-절연체전이물질들을직렬로연결하는제 2 전극을포함할수 있다.
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公开(公告)号：KR101796146B1
公开(公告)日：2017-11-10
申请号：KR1020130156332
申请日：2013-12-16
Applicant: 한국전자통신연구원
Inventor： 김현탁
Abstract: 본발명은금속-절연체전이 (metal-Insulator Transition: MIT) 트랜지스터의구동을쉽고편리하게하기위하여콘트롤단자와아울렛단자사이에서 MIT를일으키게하는 MIT 임계전류공급용소자를포함하는 MIT 트랜지스터시스템을개시한다. 본발명에따른전류공급기는상기금속-절연체전이트랜지스터의제어단자와출력단자사이에서 MIT 현상이일어나도록하기위한임계전류를공급한다.
Abstract translation: 本发明公开了一种包括MIT临界电流供应元件的MIT晶体管系统，所述MIT临界电流供应元件在控制端子和插座端子之间引起MIT以促进金属 - 绝缘体转变（MIT）晶体管的操作。 根据本发明的电流供应提供用于在金属 - 绝缘体转变晶体管的控制端子和输出端子之间引起MIT现象的阈值电流。
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公开(公告)号：KR1020140049917A
公开(公告)日：2014-04-28
申请号：KR1020130028117
申请日：2013-03-15
Applicant: 한국전자통신연구원
IPC: H01L31/101 , H01L31/109
CPC classification number: H01L31/09 , H01L31/0224 , H01L31/03046 , H01L31/062
Abstract: The present invention discloses an ambient light sensor based on a metal-insulator transition (MIT) phenomenon. The sensor comprises: a substrate; a buffer layer on the substrate; a plurality of electrodes separated on the buffer layer; and a detection layer coupled into the electrodes and detecting the area of visible light and the infrared light. Herein, the detection layer may include an aluminium gallium arsenic layer or a superlattice layer of the aluminium galliumarsenic layer and a galliumarsenic layer.
Abstract translation: 本发明公开了一种基于金属 - 绝缘体转变（MIT）现象的环境光传感器。 传感器包括：基板; 衬底上的缓冲层; 在所述缓冲层上分离的多个电极; 以及耦合到电极中并检测可见光和红外光的区域的检测层。 这里，检测层可以包括铝镓砷层或铝镓砷层的超晶格层和镓砷层。
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公开(公告)号：KR1020140005750A
公开(公告)日：2014-01-15
申请号：KR1020120144140
申请日：2012-12-12
Applicant: 한국전자통신연구원
Inventor： 김현탁
Abstract: A power supply device according to the present invention comprises a rectifier for receiving an input voltage and outputting a rectified voltage; a jump device for receiving the rectified voltage and outputting a jump voltage that is lower than the rectified voltage by a predetermined value; a low dropout regulator for receiving the jump voltage and outputting an output voltage that is lower than the jump voltage by a predetermined level; a first capacitor connected between an input terminal of the jump device and a grounding node; a second capacitor connected to an input terminal of the low dropout regulator and the grounding node; and a third capacitor connected between an output terminal of the low dropout regulator and the grounding node.
Abstract translation: 根据本发明的电源装置包括用于接收输入电压并输出整流电压的整流器; 用于接收整流电压并将低于整流电压的跳变电压输出预定值的跳转装置; 低压差稳压器，用于接收跳跃电压并将低于跳变电压的输出电压输出预定电平; 连接在所述跳跃装置的输入端子和接地节点之间的第一电容器; 连接到所述低压差稳压器的输入端子和所述接地节点的第二电容器; 以及连接在低压差稳压器的输出端子与接地节点之间的第三电容器。
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105.发明公开
公开(公告)号：KR1020130047558A
公开(公告)日：2013-05-08
申请号：KR1020120073002
申请日：2012-07-04
Applicant: 한국전자통신연구원
CPC classification number: H01L49/003
Abstract: PURPOSE: A technology for reducing ESD noise in a metal-insulator transition device and an electronic system are provided to effectively remove the static electricity of the electronic system by using a metal-insulator transition 3 terminal element. CONSTITUTION: A first semiconductor region(10) of a first conductivity functions as an outlet region. A second semiconductor region(20) of a second conductivity functions as a control region. The concentration of the second semiconductor region of the second conductivity has the moat critical concentration of the upper part of the first semiconductor region of the first conductivity. A third semiconductor region(30) of the first conductivity functions as an inlet region. An MIT 3 terminal element consists of three terminals(12,22,32) for an inlet(I), an outlet(O), and a control(C).
Abstract translation: 目的：提供一种用于减少金属 - 绝缘体转换装置和电子系统中的ESD噪声的技术，以通过使用金属 - 绝缘体转换3端子元件来有效地去除电子系统的静电。 构成：第一导电性的第一半导体区域（10）用作出口区域。 具有第二导电性的第二半导体区域（20）用作控制区域。 第二导电性的第二半导体区域的浓度具有第一导电率的第一半导体区域的上部的护城河临界浓度。 第一导电性的第三半导体区域（30）用作入口区域。 MIT 3端子元件由用于入口（I），出口（O）和控制（C）的三个端子（12,22,32）组成。
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Patent Agency Ranking
公开(公告)号：KR1020120136272A
公开(公告)日：2012-12-18
申请号：KR1020110138355
申请日：2011-12-20
Applicant: 한국전자통신연구원
CPC classification number: G08B17/10 , G08B17/06 , G08B17/113
Abstract: PURPOSE: A complex alarm system and a smoke sensor equipped therewith are provided to sense smoke by a thermo-sensitive smoke sensing part including metal-insulator composite, thereby increasing safety. CONSTITUTION: A smoke sensing unit(30) comprises a first sensor and a second sensor which sense smoke. The first sensor and the second sensor include a thermo-sensitive smoke sensing part(22). A smoke level measuring unit(40) compares the signal from the first and second sensors with the set-up criteria value, and generates a signal of the measured smoke level. A sensing controlling unit(50) receives the signal of the measured smoke level and generates a fire alarm signal. [Reference numerals] (10) Smoke sensor; (20) Reference sensor; (30) Smoke sensing unit; (40) Smoke level measuring unit; (42) First comparator; (44) Second comparator; (50) Sensing control unit(CPU); (60) Communication unit; (AA) Reference signal
Abstract translation: 目的：提供一种复杂的报警系统和配备烟雾传感器的感光烟感应部件，包括金属 - 绝缘体复合材料，从而提高安全性。 构成：烟雾感测单元（30）包括第一传感器和感测烟雾的第二传感器。 第一传感器和第二传感器包括热敏烟感测部件（22）。 烟度测量单元（40）将来自第一和第二传感器的信号与设置标准值进行比较，并产生所测量的烟雾水平的信号。 感测控制单元（50）接收测量的烟雾水平的信号并产生火灾报警信号。 （附图标记）（10）烟雾传感器; （20）参考传感器; （30）烟感觉单元; （40）烟度测量单元; （42）第一比较器; （44）第二比较; （50）感应控制单元（CPU）; （60）通讯单元; （AA）参考信号
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公开(公告)号：KR1020120082328A
公开(公告)日：2012-07-23
申请号：KR1020110116466
申请日：2011-11-09
Applicant: 한국전자통신연구원
CPC classification number: G05F3/02 , G05F3/16 , H02M2001/327
Abstract: PURPOSE: A constant current circuit of high efficiency is provided to maximize or increase the efficiency of a transistor by improving loss of a base current. CONSTITUTION: An end of a load(2) is connected to a power voltage source. A heat generator(10) is connected between an end of a load and advanced power and ground connections resistance. The heat generator inhibits thermal runaway effect of a semiconductor. A first transistor(12) is connected to an end of a load in parallel with a heat control unit. The first transistor increases current efficiency of a heat controller. A second transistor(14) is connected between an advanced power and ground connections resistance and the first transistor. The second transistor is switched according to a node voltage of the advanced power and ground connections resistance. The second transistor maintains a constant current flow of the advanced power and ground connections resistance.
Abstract translation: 目的：提供高效率的恒流电路，以通过改善基极电流的损耗来最大化或提高晶体管的效率。 构成：负载端（2）连接到电源电压源。 发电机（10）连接在负载端和高级电源和接地连接电阻之间。 热发生器抑制半导体的热失控效应。 第一晶体管（12）与热控制单元并联连接到负载的端部。 第一个晶体管提高了热控制器的电流效率。 第二晶体管（14）连接在高级电源和接地连接电阻和第一晶体管之间。 第二晶体管根据先进电源和接地连接电阻的节点电压进行切换。 第二晶体管保持先进的电源和接地电阻的恒定电流流动。
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公开(公告)号：KR101156620B1
公开(公告)日：2012-06-14
申请号：KR1020090030516
申请日：2009-04-08
Applicant: 한국전자통신연구원
IPC: H01L21/335 , H01L29/78
CPC classification number: H01L29/1606 , H01L29/0673 , H01L29/0895 , H01L29/778 , H01L29/78684 , H01L29/78696 , H01L51/0541
Abstract: 본 발명은 그라핀을 채널층으로 이용함으로써 작동 전류의 온/오프 비를 증가시킬 수 있는 그라핀 채널층을 가지는 전계 효과 트랜지스터를 제공한다. 본 발명의 그라핀 채널층을 가지는 전계 효과 트랜지스터는: 기판; 기판의 일부 영역 상에 위치하고 그라핀을 포함하는 그라핀 채널층; 그라핀 채널층의 제1 영역 상에 위치하는 제1 전극; 그라핀 채널층의 상기 제1 영역과 이격된 제2 영역 상에 위치하는 개재층; 및 개재층 상에 위치하는 제2 전극; 상기 그라핀 채널층, 상기 제1 전극, 상기 제2 전극 상에 위치하는 게이트 절연층; 및 상기 게이트 절연층 상에 위치하는 게이트 전극;을 포함한다.
전계 효과 트랜지스터, 그라핀, 채널, 작동 전류 오프 전류-
公开(公告)号：KR1020120034548A
公开(公告)日：2012-04-12
申请号：KR1020110052822
申请日：2011-06-01
Applicant: 한국전자통신연구원
Abstract: PURPOSE: A constant-current circuit is provided to prevent a heat congestion phenomenon of a load using reverse bias voltage properties of a bipolar transistor. CONSTITUTION: A constant-current circuit comprises a load(10) and a constant-current supply part. The constant-current supply part comprises a first bipolar transistor(TR1) and a second bipolar transistor(TR2). One end of the load is connected to a power voltage source. An emitter of the first bipolar transistor is connected to the other end of the load and a collector is connected to ground. A base of the first bipolar transistor receives base voltage for generating a constant-current. Rectifying voltage applied between the emitter and the collector of the first bipolar transistor is proportional to power voltage from the power voltage source.
Abstract translation: 目的：提供恒流电路，以防止使用双极晶体管的反向偏置电压特性的负载的热量拥挤现象。 构成：恒流电路包括负载（10）和恒流供电部分。 恒流供应部分包括第一双极晶体管（TR1）和第二双极晶体管（TR2）。 负载的一端连接到电源电压源。 第一双极晶体管的发射极连接到负载的另一端，并且集电极连接到地。 第一双极晶体管的基极接收用于产生恒定电流的基极电压。 施加在第一双极晶体管的发射极和集电极之间的整流电压与来自电源电压源的功率电压成比例。
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公开(公告)号：KR1020110079979A
公开(公告)日：2011-07-12
申请号：KR1020100000106
申请日：2010-01-04
Applicant: 한국전자통신연구원
IPC: H01L33/04
CPC classification number: H01L33/0008 , H01L33/0075 , H01L33/04 , H01L33/12 , H01L33/42 , H01L33/60 , H01L2924/12041
Abstract: PURPOSE: A structure of a light emitting device using an avalanche metal-insulator transition phenomenon in a semiconductor is provided to enhance a yield rate by reducing the number of layers in a thin film and simplifying a light emitting device manufacturing process. CONSTITUTION: A semiconductor layer in which a light emission occurs in an avalanche domain is included. A buffer layer is formed on a substrate. A P type or a N type semiconductor layer is formed on the buffer layer. The first electrode layer is formed under the semiconductor layer or within the semiconductor layer. The second electrode layer is formed on the semiconductor layer.
Abstract translation: 目的：提供一种在半导体中使用雪崩金属 - 绝缘体转变现象的发光器件的结构，以通过减少薄膜中的层数来提高成品率，并简化了发光器件制造工艺。 构成：包括在雪崩域中发生发光的半导体层。 在基板上形成缓冲层。 在缓冲层上形成P型或N型半导体层。 第一电极层形成在半导体层之下或半导体层内。 第二电极层形成在半导体层上。
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