公开(公告)号：KR1020140008999A

公开(公告)日：2014-01-22

申请号：KR1020130003890

申请日：2013-01-14

Applicant: 한국전자통신연구원

Inventor： 김현탁 ,  최정용 ,  전현우 ,  최재호 ,  서기완

IPC: H01L35/02

CPC classification number: H01L35/02 ,  H01L35/14

Abstract: The present invention discloses a thermoelectric element. The thermoelectric element comprises a first electrode, a substrate electrically connected to the first electrode, a thin film on the substrate, and a second electrode on the thin film. The substrate and the thin film can have metallic properties that thermoelectric power thereof is higher than thermoelectric power of semiconductor junction at temperatures above the critical temperature.

Abstract translation: 本发明公开了一种热电元件。 热电元件包括​​第一电极，电连接到第一电极的衬底，衬底上的薄膜和薄膜上的第二电极。 衬底和薄膜可以具有金属特性，其温度高于临界温度时的热电功率高于半导体结的热电功率。

公开(公告)号：KR102031961B1

公开(公告)日：2019-10-14

申请号：KR1020130003890

申请日：2013-01-14

Applicant: 한국전자통신연구원

Inventor： 김현탁 ,  최정용 ,  전현우 ,  최재호 ,  서기완

IPC: H01L35/02 ,  H01L35/14

公开(公告)号：KR1020140049917A

公开(公告)日：2014-04-28

申请号：KR1020130028117

申请日：2013-03-15

Applicant: 한국전자통신연구원

Inventor： 최정용 ,  최성열 ,  김봉준 ,  김현탁 ,  최재호

IPC: H01L31/101 ,  H01L31/109

CPC classification number: H01L31/09 ,  H01L31/0224 ,  H01L31/03046 ,  H01L31/062

Abstract: The present invention discloses an ambient light sensor based on a metal-insulator transition (MIT) phenomenon. The sensor comprises: a substrate; a buffer layer on the substrate; a plurality of electrodes separated on the buffer layer; and a detection layer coupled into the electrodes and detecting the area of visible light and the infrared light. Herein, the detection layer may include an aluminium gallium arsenic layer or a superlattice layer of the aluminium galliumarsenic layer and a galliumarsenic layer.

Abstract translation: 本发明公开了一种基于金属 - 绝缘体转变（MIT）现象的环境光传感器。 传感器包括：基板; 衬底上的缓冲层; 在所述缓冲层上分离的多个电极; 以及耦合到电极中并检测可见光和红外光的区域的检测层。 这里，检测层可以包括铝镓砷层或铝镓砷层的超晶格层和镓砷层。